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Characterisation and modelling of gallium nitride power semiconductor devices dynamic on state resistance

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Figure

Fig. 2: GaN-HEMT dynamic RDS(on) values due to trappingeffects
Fig. 3: GaN-HEMT dynamic ON-state resistance measurementcircuit and control signals
Fig. 4: Realization of the measurement circuit
TABLE I: Major parameters of the measurement equipments and clamping circuit devices
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