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Annealing Effect on the Optical Properties of a SiC:H Films Deposited by PECVD*

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Figure

Table 1Range of deposition parameter for investigation of process param-eter effects.
Fig. 2Optical transmittance of as-deposited and 873 K annealed film.
Fig. 4FT-IR C–H spectra of the as-deposited and annealed films at varioustemperature ranging from 573 to 873 K.
Fig. 8Rms roughness of the a-SiC:H films as a function of Ta.

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