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Infrared Reflectance Analysis of Epitaxial n Type Doped GaN Layers Grown on Sapphire

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Figure

Fig. 1 Schematic of the investigated n+/n0/n+-GaN structure grownon GaN-template/(0001) sapphire substrate
Fig. 3 Impurity elements profiles of the investigated n+/n0/n+-GaNstructure measured by SIMS from the sample surface
Fig. 4 Simulations of the IR reflectance spectra with different numberspectra in the range above 750 cmof layers
Figure 8 shows the calculated imaginary parts of the
+2

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