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Optimization of InGaAs/InAlAs Avalanche Photodiodes

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Figure

Table 1 Material parameters used for InGaAs/InAlAs APDsimulation [6, 8, 16, 17]
Fig. 3 a Current–voltage characteristic of avalanche photodiodewith different multiplication layer doping
Fig. 4 a Current–voltage characteristic of avalanche photodiodewith different multiplication layer thickenesses
Fig. 7 a Current–voltage characteristic of avalanche photodiodewith different charge layer thicknesses

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