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Temperature Dependence of Electrical Properties of Organic Thin Film Transistors Based on pn Heterojuction and Their Applications in Temperature Sensors

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Figure

Figure 1. Schematic cross sections of (a) a single layer and (b) a sand- wich device (the dimensions are not scaled)
Figure 3(a) and temperature dependence of mobility can be divided into two regions, and the mobility are clearly thermally ac-tivated with thermal activation energy at different temperatures
Figure 3. (a) (b) Transfer characteristics of another Fof the sandwich F16CuPc/α6T TFT in the linear regions at different temperatures, temperature dependence of (c) mobility and (d) threshold voltage 16CuPc/α6T TFT, respectively
Figure 4. (a) VG dependence of log10 (ID) on the temperatures, and (b) dependence of k on VG

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