91 P C = 25 C Power Dissipation 330 P C = 100 C Power Dissipation Linear Derating Factor

(1)

www.irf.com

1

IRFB4229PbF

Notes

through are on page 8

Description

This HEXFET

®

_{Power MOSFET}

_{is specifically designed for Sustain; Energy Recovery & Pass switch}

applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve

low on-resistance per silicon area and low E

PULSE

rating. Additional features of this MOSFET are 175°C

operating junction temperature and high repetitive peak current capability. These features combine to

make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.

S D G

TO-220AB

D S D G G D S

Gate Drain Source

V

_DS

min

250 V

V

_{DS (Avalanche)}

typ.

300 V

R

_DS(ON)

typ. @ 10V

38 m

:

I

_RP

max @ T

_C

= 100°C

91 A

T

_J

max

175 °C

Key Parameters

Absolute Maximum Ratings

Parameter Units

VGS Gate-to-Source Voltage V

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V A

ID @ TC = 100°C Continuous Drain Current, VGS @ 10V

IDM Pulsed Drain Current c

IRP @ TC = 100°C Repetitive Peak Current g

PD @TC = 25°C Power Dissipation W

PD @TC = 100°C Power Dissipation

Linear Derating Factor W/°C

TJ Operating Junction and °C

TSTG Storage Temperature Range

Soldering Temperature for 10 seconds

Mounting Torque, 6-32 or M3 Screw N

Thermal Resistance

Parameter Typ. Max. Units

R_θJC Junction-to-Case f ––– 0.45

R_θCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W

R_θJA Junction-to-Ambient f ––– 62 91 300 -40 to + 175 10lb_{xin (1.1Nxm)} 330 190 2.2 Max. 33 180 46 ±30

Features

l

Advanced Process Technology

l

Key Parameters Optimized for PDP Sustain,

Energy Recovery and Pass Switch Applications

l

Low E

PULSE

Rating to Reduce Power

Dissipation in PDP Sustain, Energy Recovery

and Pass Switch Applications

l

Low Q

G

for Fast Response

l

High Repetitive Peak Current Capability for

Reliable Operation

l

Short Fall & Rise Times for Fast Switching

l

175°C Operating Junction Temperature for

Improved Ruggedness

l

Repetitive Avalanche Capability for Robustness

and Reliability

l

Class-D Audio Amplifier 300W-500W

(Half-bridge)

(2)

IRFB4229PbF

S D

G

Electrical Characteristics @ T

_J

= 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units

BVDSS Drain-to-Source Breakdown Voltage 250 ––– ––– V

∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 210 ––– mV/°C

RDS(on) Static Drain-to-Source On-Resistance ––– 38 46 mΩ

VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V

∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -14 ––– mV/°C

IDSS Drain-to-Source Leakage Current ––– ––– 20 µA

––– ––– 1.0 mA

IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA

Gate-to-Source Reverse Leakage ––– ––– -100

gfs Forward Transconductance 83 ––– ––– S

Q_g Total Gate Charge ––– 72 110 nC

Qgd Gate-to-Drain Charge ––– 26 –––

td(on) Turn-On Delay Time ––– 18 –––

tr Rise Time ––– 31 ––– ns

td(off) Turn-Off Delay Time ––– 30 –––

tf Fall Time ––– 21 –––

tst Shoot Through Blocking Time 100 ––– ––– ns

E_PULSE Energy per Pulse µJ

Ciss Input Capacitance ––– 4560 –––

Coss Output Capacitance ––– 390 ––– pF

Crss Reverse Transfer Capacitance ––– 100 –––

Coss eff. Effective Output Capacitance ––– 290 –––

LD Internal Drain Inductance ––– 4.5 ––– Between lead,

nH 6mm (0.25in.)

LS Internal Source Inductance ––– 7.5 ––– from package

Avalanche Characteristics

Parameter Units

EAS Single Pulse Avalanche Energyd mJ

EAR Repetitive Avalanche Energy c mJ

V_{DS(Avalanche)} _{Repetitive Avalanche Voltagec} V

IAS Avalanche Currentd A

Diode Characteristics

Parameter Min. Typ. Max. Units

I_S @ T_C = 25°C Continuous Source Current ––– –––

(Body Diode) A

ISM Pulsed Source Current ––– –––

(Body Diode)_c

VSD Diode Forward Voltage ––– ––– 1.3 V

trr Reverse Recovery Time ––– 190 290 ns

Qrr Reverse Recovery Charge ––– 840 1260 nC

––– 790 ––– ––– 1390 ––– 33 26 ––– ––– 300 ––– Typ. Max. ƒ = 1.0MHz, ––– 130 TJ = 25°C, IF = 26A, VDD = 50V di/dt = 100A/µs e TJ = 25°C, IS = 26A, VGS = 0V e showing the integral reverse p-n junction diode. Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 26A e VGS = 0V, VDS = 0V to 200V VDS = 250V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS = 0V L = 220nH, C= 0.3µF, VGS = 15V VDD = 125V, VGS = 10Ve ID = 26A RG = 2.4Ω VDS = 200V, RG= 4.7Ω, TJ = 100°C VDS = 25V VDS = VGS, ID = 250µA VDS = 250V, VGS = 0V See Fig. 22 46 180 MOSFET symbol VDS = 25V, ID = 26A VDD = 125V, ID = 26A, VGS = 10Ve Conditions

and center of die contact

VDD = 200V, VGS = 15V, RG= 4.7Ω

V_DS = 200V, R_G= 4.7Ω, TJ = 25°C

(3)

IRFB4229PbF

Fig 6. Typical E

PULSE

vs. Drain Current

Fig 5. Typical E

PULSE

vs. Drain-to-Source Voltage

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

_{Fig 4. Normalized On-Resistance vs. Temperature}

0.1 1 10 100 VDS, Drain-to-Source Voltage (V) 1 10 100 1000 I D , D ra in -t o-S ou rc e C ur re nt ( A ) ≤ 60µs PULSE WIDTH Tj = 25°C 5.5V VGS TOP 15V 10V 8.0V 7.0V 6.5V 6.0V BOTTOM 5.5V 4.0 5.0 6.0 7.0 8.0 VGS, Gate-to-Source Voltage (V) 0.01 0.1 1 10 100 1000 I D , D ra in -t o-S ou rc e C ur re nt (Α ) VDS = 25V ≤ 60µs PULSE WIDTH TJ = 25°C TJ = 175°C -60 -40 -20 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature (°C) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 RD S (o n) , D ra in -t o-S ou rc e O n R es is ta nc e ( N or m al iz ed ) ID = 26A VGS = 10V 150 160 170 180 190 200

VDS, Drain-to -Source Voltage (V) 0 400 800 1200 1600 E ne rg y pe r pu ls e (µ J) L = 220nH C = 0.3µF 100°C 25°C 100 110 120 130 140 150 160 170

ID, Peak Drain Current (A)

0 200 400 600 800 1000 1200 1400 E ne rg y pe r pu ls e (µ J) L = 220nH C = Variable 100°C 25°C 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) 1 10 100 1000 I D , D ra in -t o-S ou rc e C ur re nt ( A ) ≤ 60µs PULSE WIDTH Tj = 175°C 5.5V VGS TOP 15V 10V 8.0V 7.0V 6.5V 6.0V BOTTOM 5.5V

(4)

IRFB4229PbF

Fig 11. Maximum Drain Current vs. Case Temperature

Fig 8. Typical Source-Drain Diode Forward Voltage

Fig 12. Maximum Safe Operating Area

Fig 7. Typical E

PULSE

vs.Temperature

Fig 10. Typical Gate Charge vs.Gate-to-Source Voltage

Fig 9. Typical Capacitance vs.Drain-to-Source Voltage

0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V) 0.1 1 10 100 1000 I SD , R ev er se D ra in C ur re nt ( A ) TJ = 25°C TJ = 175°C VGS = 0V 1 10 100 1000 VDS, Drain-to-Source Voltage (V) 0 1000 2000 3000 4000 5000 6000 7000 C , C ap ac ita nc e (p F ) Coss Crss Ciss VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 0 20 40 60 80 100 120 QG Total Gate Charge (nC)

0 4 8 12 16 20 VG S , G at e-to -S ou rc e V ol ta ge ( V ) VDS= 160V VDS= 100V VDS= 40V ID= 26A 25 50 75 100 125 150 175 TJ, Junction Temperature (°C) 0 10 20 30 40 50 I D , D ra in C ur re nt ( A ) 1 10 100 1000 VDS, Drain-to-Source Voltage (V) 0.1 1 10 100 1000 I D , D ra in -t o-S ou rc e C ur re nt ( A ) Tc = 25°C Tj = 175°C Single Pulse 1µsec 10µsec OPERATION IN THIS AREA LIMITED BY R DS(on) 100µsec 25 50 75 100 125 150 Temperature (°C) 0 400 800 1200 1600 2000 E ne rg y pe r pu ls e (µ J) L = 220nH C= 0.3µF C= 0.2µF C= 0.1µF

(5)

IRFB4229PbF

Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 15. Threshold Voltage vs. Temperature

Fig 14. Maximum Avalanche Energy Vs. Temperature

Fig 13. On-Resistance Vs. Gate Voltage

Fig 16. Typical Repetitive peak Current vs.

Case temperature

5 6 7 8 9 10 VGS, Gate-to-Source Voltage (V) 0.00 0.10 0.20 0.30 0.40 RD S (o n) , D ra in -t o -S ou rc e O n R es is ta nc e (Ω ) TJ = 25°C TJ = 125°C ID = 26A 25 50 75 100 125 150 175

Starting TJ, Junction Temperature (°C) 0 100 200 300 400 500 600 EA S , S in gl e P ul se A va la nc he E ne rg y (m J) I D TOP 7.4A 13A BOTTOM 26A -75 -50 -25 0 25 50 75 100 125 150 175 TJ , Temperature ( °C ) 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VG S (t h) G at e th re sh ol d V ol ta ge ( V ) ID = 250µA 1E-006 1E-005 0.0001 0.001 0.01 0.1

t1 , Rectangular Pulse Duration (sec)

0.001 0.01 0.1 1 T he rm al R es po ns e ( Z th JC ) 0.20 0.10 D = 0.50 0.02 0.01 0.05 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 25 50 75 100 125 150 175 Case Temperature (°C) 0 20 40 60 80 100 120 140 R ep et iti ve P ea k C ur re nt ( A ) ton= 1µs Duty cycle = 0.25 Half Sine Wave Square Pulse Ri (°C/W) τι (sec) 0.080717 0.000052 0.209555 0.001021 0.159883 0.007276 τJ τJ τ1 τ1 τ2 τ2 τ3 τ3 R1 R1 R2 R2 R3 R3 τ τC Ci= τi/Ri Ci= τi/Ri

(6)

IRFB4229PbF

Fig 19b. Unclamped Inductive Waveforms

Fig 19a. Unclamped Inductive Test Circuit

tp V_(BR)DSS I_AS RG IAS 0.01Ω tp D.U.T L VDS + - VDD DRIVER A 15V 20VVGS

Fig 20a. Gate Charge Test Circuit

_{Fig 20b. Gate Charge Waveform}

Vds

Vgs Id

Vgs(th)

Qgs1 Qgs2 Qgd Qgodr

Fig 18.

_{Diode Reverse Recovery Test Circuit for HEXFET}

®

_{Power MOSFETs}

Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5%

Body Diode Forward Drop Re-Applied

Voltage Reverse Recovery

Current Body Diode ForwardCurrent

VGS=10V

VDD

ISD

Driver Gate Drive

D.U.T. ISDWaveform

D.U.T. VDSWaveform

Inductor Curent

D = _PeriodP.W.

***

VGS = 5V for Logic Level Devices

***

+ -+ + + - RG • dv/dt controlled by RG VDD

• Driver same type as D.U.T. • ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

D.U.T

**

*

Use P-Channel Driver for P-Channel Measurements

**

Reverse Polarity for P-Channel

1K

VCC DUT

0

(7)

IRFB4229PbF

Fig 21a. t

st

and E

PULSE

Test Circuit

Fig 21b. t

st

Test Waveforms

Fig 21c. E

_PULSE

Test Waveforms

PULSE A PULSE B tST DRIVER DUT L C VCC RG RG B A Ipulse

Fig 22a. Switching Time Test Circuit

Fig 22b. Switching Time Waveforms

VDS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % RD VGS RG D.U.T. VGS + -VDD V_DS 90% 10% VGS t_d(on) t_r t_d(off) t_f

(8)

IRFB4229PbF

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrialmarket. Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 09/2007

Notes:

Repetitive rating; pulse width limited by max. junction temperature.

Starting TJ = 25°C, L = 0.37mH, RG = 25Ω, IAS = 26A.

Pulse width ≤ 400µs; duty cycle ≤ 2%.

R_θis measured at TJ of approximately 90°C.

Half sine wave with duty cycle = 0.25, ton=1µsec.

TO-220AB packages are not recommended for Surface Mount Application.

TO-220AB Package Outline

(Dimensions are shown in millimeters (inches))

TO-220AB Part Marking Information

/27&2'( (;$03/( 7+,6,6$1,5) 1RWH3LQDVVHPEO\OLQHSRVLWLRQ LQGLFDWHV/HDG)UHH ,17+($66(0%/</,1(& $66(0%/('21:: ,17(51$7,21$/ 3$57180%(5 5(&7,),(5 /27&2'( $66(0%/< /2*2 <($5 '$7(&2'( :((. /,1(&

91 P C = 25 C Power Dissipation 330 P C = 100 C Power Dissipation Linear Derating Factor

www.irf.com

1

IRFB4229PbF

Notes

 through are on page 8

Description

This HEXFET

Power MOSFET

is specifically designed for Sustain; Energy Recovery & Pass switch

applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve

low on-resistance per silicon area and low E

rating. Additional features of this MOSFET are 175°C

operating junction temperature and high repetitive peak current capability. These features combine to

make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.

TO-220AB

V

min

250

V

V

typ.

300

V

R

typ. @ 10V

38

m

:

I

max @ T

= 100°C

91

A

T

max

175

°C

Key Parameters

Absolute Maximum Ratings

Thermal Resistance

Features

Advanced Process Technology

Key Parameters Optimized for PDP Sustain,

Energy Recovery and Pass Switch Applications

Low E

Rating to Reduce Power

Dissipation in PDP Sustain, Energy Recovery

and Pass Switch Applications

Low Q

for Fast Response

High Repetitive Peak Current Capability for

Reliable Operation

Short Fall & Rise Times for Fast Switching

175°C Operating Junction Temperature for

Improved Ruggedness

Repetitive Avalanche Capability for Robustness

and Reliability

Class-D Audio Amplifier 300W-500W

(Half-bridge)

IRFB4229PbF

Electrical Characteristics @ T

= 25°C (unless otherwise specified)

Avalanche Characteristics

Diode Characteristics

IRFB4229PbF

Fig 6. Typical E

vs. Drain Current

Fig 5. Typical E

vs. Drain-to-Source Voltage

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance vs. Temperature

IRFB4229PbF

Fig 11. Maximum Drain Current vs. Case Temperature

Fig 8. Typical Source-Drain Diode Forward Voltage

Fig 12. Maximum Safe Operating Area

Fig 7. Typical E

vs.Temperature

through are on page 8

_{Power MOSFET}

_{is specifically designed for Sustain; Energy Recovery & Pass switch}

_{Fig 4. Normalized On-Resistance vs. Temperature}

_{Fig 20b. Gate Charge Waveform}

_{Diode Reverse Recovery Test Circuit for HEXFET}

_{Power MOSFETs}