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Growth and characterization of a novel In2Se3 structure

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Figure

FIG. 1. X-ray diffraction spectra of �difference is that the-In2Se3 �A� and the novel In2Se3structure �B�
FIG. 3. RBS spectra of 40 nm �-In2Se3 and �-In2Se3 films. Analysis of thepeak areas confirms that the Se/In ratio in the films is 1.50�0.01 for bothstructures
FIG. 5. Temperature dependence of the dark resistivity of ���-In2Se3 and-In2Se3. The lines are fits based on an Arrhenius behavior of the resistivitywith the activation energy being 0.43 and 0.68 eV for �-In2Se3 and-In2Se3, respectively

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