CMD GHz Low Noise Amplifier. Features. Functional Block Diagram. Description. Electrical Performance - V dd = 3.0 V, T A = 25 o C, F=12 GHz

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The CMD307 is a highly efficient GaAs MMIC low noise amplifier ideally suited for EW and communications systems where small size and low power consumption are needed. At 12 GHz the device delivers greater than 19 dB of gain with a corresponding output 1 dB compression point of +11 dBm and noise figure of 1.8 dB. The CMD307 is a 50 ohm matched design which eliminates the need for external DC blocks and RF port matching. The CMD307 offers full pas-sivation for increased reliability and moisture protection.

► Ultra low noise performance ► Low current consumption ► Single positive supply voltage ► Small die size

Features

Description

Functional Block Diagram

CMD307

8-16 GHz Low Noise Amplifier

1

2

3

RFIN Vdd RFOUT

Electrical Performance

- V

dd

= 3.0 V, T

A

= 25

o

C, F=12 GHz

Parameter Min Typ Max Units

Frequency Range GHz

Gain 19.5 dB

Noise Figure 1.8 dB

Input Return Loss 12 dB

Output Return Loss 16 dB

Output P1dB 12 dBm

8 - 16

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CMD307

8-16 GHz Low Noise Amplifier

Parameter Rating

Drain Voltage, Vdd 5.0 V RF Input Power + 20 dBm Channel Temperature, Tch 150 °C Power Dissipation, Pdiss 338 mW Thermal Resistance Θ_JC 192 °C/W Operating Temperature -55 to 85 °C Storage Temperature -55 to 150 °C

Electrical performance is measured at specific test conditions. Electrical specifications are not guaranteed over all recommended operating con-ditions.

Specifications

Absolute Maximum Ratings

Recommended Operating Conditions

Parameter Min Typ Max Units

Vdd 2.0 3.0 4.0 V

Idd 51 mA

Exceeding any one or combination of the maximum ratings may cause permanent damage to the device.

Electrical Specifications - V

dd

= 3.0 V, T

A

= 25

o

C

Parameter Min Typ Max Min Typ Max Units

Frequency Range 8 - 11 11 - 16 GHz

Gain 15 19 15.5 19.5 dB

Noise Figure 2 2.8 1.7 2.3 dB

Input Return Loss 11 13 dB

Output Return Loss 13 16 dB

Output P1dB 11 11.5 dBm Supply Current 35 51 67 35 51 67 mA Output IP3 25 25 dBm Vdd (V) Idd (mA) 2.0 47 3.0 51 4.0 55

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Typical Performance

CMD307

Broadband Performance, V

dd

= 3.0 V, T

A

= 25

o

C

Narrow-band Performance, V

dd

= 3.0 V, T

A

= 25

o

C

-20 -15 -10 -5 0 5 10 15 20 25 0 2 4 6 8 10 12 14 16 18 20 22 24 Frequency/GHz R es p o n se /d B 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 N o is e F ig u re /d B S11 S21 S22 NF -20 -15 -10 -5 0 5 10 15 20 25 R es p o n se /d B 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 N o is e F ig u re /d B S11 S21 S22 NF

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Typical Performance

CMD307

Gain vs. Temperature, V

dd

= 3.0 V

Gain vs. V

dd

, T

A

= 25

o

C

6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 8 9 10 11 12 13 14 15 16 Frequency/GHz G a in /d B +25C +85C -55C 9 10 11 12 13 14 15 16 17 18 19 20 21 22 G a in /d B Vdd=2V Vdd=3V Vdd=4V

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Typical Performance

CMD307

Noise Figure vs. Temperature, V

dd

= 3.0 V

Noise Figure vs. V

dd

, T

A

= 25

o

C

0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 8 9 10 11 12 13 14 15 16 Frequency/GHz N o is e F ig u r e/ d B +25C +85C -55C 0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 N o is e F ig u r e/ d B Vdd=2V Vdd=3V Vdd=4V

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Typical Performance

CMD307

P1dB vs. Temperature, V

dd

= 3.0 V

P1dB vs. V

dd

, T

A

= 25

o

C

0 2 4 6 8 10 12 14 16 18 20 8 9 10 11 12 13 14 15 16 Frequency/GHz P 1 d B /d B m +25C +85C -40C 4 6 8 10 12 14 16 18 20 P 1 d B /d B m Vdd=2V Vdd=3V Vdd=4V

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Typical Performance

CMD307

Psat vs. Temperature, V

dd

= 3.0 V

Psat vs. V

dd

, T

A

= 25

o

C

0 2 4 6 8 10 12 14 16 18 20 8 9 10 11 12 13 14 15 16 Frequency/GHz P sa t/ d B m +25C +85C -40C 0 2 4 6 8 10 12 14 16 18 20 P sa t/ d B m Vdd=2V Vdd=3V Vdd=4V

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Typical Performance

CMD307

Output IP3 vs. Temperature, V

dd

= 3.0 V

Output IP3 vs. V

dd

, T

A

= 25

o

C

10 12 14 16 18 20 22 24 26 28 30 8 9 10 11 12 13 14 15 16 Frequency/GHz O u tp u t IP 3 /d B m +25C +85C -40C 14 16 18 20 22 24 26 28 30 O u tp u t IP 3 /d B m Vdd=2V Vdd=3V Vdd=4V

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Die Outline (all dimensions in microns)

Notes:

1. No connection required for unlabeled pads 2. Backside is RF and DC ground

3. Backside and bond pad metal: Gold 4. Die is 100 microns thick

5. DC bond pad (2) is 100 microns square 6. RF bond pads(1, 3) are 100 x 150 microns

Mechanical Information

CMD307

1

2

3

113.00 1150.00 548.00 1350.00 1035.50 88.00 557.50

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Pad Function Description Schematic 1 RF in DC blocked and 50 ohm matched

2 Vdd Power supply voltage

Decoupling and bypass caps required

3 RF out DC blocked and 50 ohm matched Backside Ground Connect to RF / DC ground

RF in Vdd RF out GND

Pad Diagram

Functional Description

Pad Description

CMD307

1

2

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Assembly Guidelines

Assembly Diagram

Applications Information

The backside of the CMD307 is RF ground. Die attach should be accomplished with electrically and thermally conductive epoxy only. Eutectic attach is not recommended. Standard assembly procedures should be followed for high frequency devices. The top surface of the semiconductor should be made planar to the adjacent RF transmission lines, and the RF decoupling capacitors placed in close proximity to the DC connections on chip.

RF connections should be made as short as possible to reduce the inductive effect of the bond wire. Use of a 0.8 mil thermosonic wedge bonding is highly recommended as the loop height will be minimized. The RF input and output require a double bond wire as shown.

The semiconductor is 100 um thick and should be handled by the sides of the die or with a custom collet. Do not make contact directly with the die surface as this will damage the monolithic circuitry. Handle with care.

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions

CMD307

8-16 GHz Low Noise Amplifier

(example: Presidio part

LSA1515B101M2H5R-L)

(example: Presidio part

MVB4080X104ZGK5R3L)

100 pF CHIP CAP

100,000 pF CHIP CAP

to Vdd

RF out

RF in

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Biasing and Operation

Applications Information

The CMD307 is biased with a positive drain supply. Performance is optimized when the drain voltage is set to +3.0 V, though it may be set to a minimum of +2.0 V and a maximum of +4.0 V.

Turn ON procedure:

1.Apply drain voltage Vdd and set to +3 V

Turn OFF procedure: 1.Turn off drain voltage Vdd

RF power can be applied at any time.

CMD307

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