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Characterization of Phosphoric Acid Doped N-type Silicon Thin Films Printed on ITO Coated PET Substrate

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Figure

Figure 1. Raman spectrums of on-Si films deposited on PET substrate with thicknesses of (a) 619 nm, (b) 611 and (c) 603 nm doped with phosphoric acid concentrations of 30 grams/liter, 20 grams/liter and 10 grams/liter respectively
Figure 2.  X-ray Diffraction patterns of n-Si films deposited on PET substrate with thicknesses of (a) 619 nm, (b) 611 and (c) 603 nm doped with phosphoric acid concentrations of 30 grams/liter, 20 grams/liter and 10 grams/liter respectively
Table 1. Lattice parameters (a = c), in-plane strain (εa), out of plane strain (εc) and average crystal size determined of n-Si films deposited on PET substrate with thicknesses of (a) 619 nm, (b) 611 and (c) 603 nm doped with phosphoric acid concentration
Figure 5. AFM images of n-Si films deposited on PET substrate with thicknesses of (a) 619 nm, (b) 611 and (c) 603 nm doped with phosphoric acid concentrations of 30 grams/liter, 20 grams/liter and 10 grams/liter respectively
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