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GaInNAs-based Hellish-vertical cavity semiconductor optical amplifier for 1.3 mu m operation

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Figure

Figure 1 Schematic diagram illustrates (a) the layer structure of the simple bar Hellish-VCSOA and (b) the refractive index profile anddistribution of the electric filed intensity across the sample, in which the QWs are situated at the antinode of the electric field, i.e.where it reaches its maximum intensity.
Figure 3 Schematic diagram to illustrate the emission of light under quasi-flat band region condition [16].
Figure 4 PL, EL and EPL experimental arrangement.
Figure 7 EL spectra measured at a fixed bias voltage of 97 Vcorresponding to an electric field of 0.97 kV/cm.
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