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Electrical and physical characterization of Ge devices

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Figure

Table 1.1: Basic parameter of Semiconductors [10, 17, 18]
Figure 1.1: Energy band structure for Ge (left) and Si (right). Reproducedfrom [2].
Figure 3.2: Lithography process: 1) sample to process, 2) photoresit coating,3) exposing to UV light, 4) development, 5) etching and 6) photoresit removal.
Figure 4.3: Gate stack implemented by Atomic Laser Deposition at IMEC.The gate stack consists of a SiO2 interlayer on top of the Si cap, HfO2 and formetal gate TiN and TaN.
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