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RAMandROM.ppt

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Memory

A memory unit is a device to which binary information is transferred

for storage and from which information is retrieved when needed for processing.

When data processing takes place, information from memory is

transferred to selected registers in the processing unit.

Intermediate and final results obtained in the processing unit are

transferred back to be stored in memory.

Binary information received from an input device is stored in memory,

and information transferred to an output device is taken from memory.

The process of storing new information into memory is referred to as a

memory write operation. The process of transferring the stored

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Memory (contd..)

A memory unit is a collection of cells capable of storing a large quantity of binary information.

There are two types of memories that are used in digital

systems: random‐access memory (RAM) and read‐only memory

(ROM).

RAM stores new information for later use. RAM can perform both write and read operations.

ROM can perform only the read operation. This means that suitable binary information is already stored inside memory and can be retrieved or read at any time. However, that

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Random Access Memory

(RAM)

A memory unit stores binary information in groups of bits called words.

The data consists of n lines (for n-bit words). Data input lines provide the information to be stored (written) into the memory, while data output lines carry the information out (read) from the memory.

The address consists of k lines which specify which word (among the 2k words available) to be selected for reading or writing.

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Random Access Memory

(RAM)

Block diagram of a memory unit:

Memory unit 2k words

n bits per word

k address lines k

Read/Write

n

n

n data input lines

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Random Access Memory

(RAM)

Content of a 1024 x 16-bit memory:

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Random Access Memory

(RAM)

The Write operation:

Transfers the address of the desired word to the address lines

Transfers the data bits (the word) to be stored in memory to the data

input lines

Activates the Write control line (set Read/Write to 0)

The Read operation:

Transfers the address of the desired word to the address lines

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Random Access Memory

(RAM)

The Read/Write operation:

Memory Enable Read/Write Memory Operation

0 X None

1 0 Write to selected word

1 1 Read from selected word

Two types of RAM: Static and dynamic.

Static RAMs use flip-flops as the memory cells.

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Random Access Memory

(RAM)

A single memory cell of the static RAM has the following logic and block diagrams.

R

S Q Input

Select

Output

Read/Write

BC Output

Input

Select

Read/Write

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Random Access Memory

(RAM)

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Random Access Memory

(RAM)

An array of RAM chips: memory chips are combined to form larger memory.

A 1K x 8-bit RAM chip:

Block diagram of a 1K x 8 RAM chip

RAM 1K x 8

DATA (8) ADRS (10) CS

RW Input data

Address Chip select Read/write

(8) Output data

8 8

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Random Access Memory

(RAM)

1K x 8

DATA (8) ADRS (10) CS RW Read/write (8) Output

1K x 8

DATA (8) ADRS (10) CS

RW

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1K x 8

DATA (8) ADRS (10) CS

RW

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1K x 8

DATA (8) ADRS (10) CS RW (8) 0–1023

1024 – 2047

2048 – 3071

3072 – 4095

Input data 8 lines 0 1 2 3 2x4 decoder Lines Lines 0 – 9 11 10

S0

S1

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Read Only Memory (ROM)

A read-only memory (ROM) is essentially a memory

device in which permanent binary information is stored.  The binary information must be specified by the

designer and is then embedded in the unit to form the required interconnection pattern.

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Example 32X8 RAM

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Programming the ROM

The intersections in ROM are programmable.

 A programmable connection between two lines is logically equivalent to a switch that can be altered to be either closed (meaning that the two lines are connected) or open (meaning that the two lines are disconnected).

The programmable intersection between two lines is sometimes called a crosspoint .

Various physical devices are used to implement crosspoint switches. One of the simplest technologies employs a fuse that normally connects the two points, but is opened or “blown” by the application of high-voltage pulse into the fuse.

The internal binary storage of a ROM is specified by a truth table that shows the word content in each address.

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Types of ROM

 The required paths in a ROM may be programmed in four different ways which gives rise to four different types of ROMs

1. The first is called mask programming and is done by the semiconductor

company during the last fabrication process of the unit.

The procedure for fabricating a ROM requires that the customer fill out the

truth table he or she wishes the ROM to satisfy.

The truth table may be submitted in a special form provided by the

manufacturer or in a specified format on a computer output medium.

The manufacturer makes the corresponding mask for the paths to produce

the 1’s and 0’s according to the customer’s truth table.

This procedure is costly because the vendor charges the customer a special

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Types of ROM

2. For small quantities, it is more economical to use a second type of ROM called programmable read‐only memory, or PROM.

When ordered, PROM units contain all the fuses intact, giving all 1’s in the bits of

the stored words.

The fuses in the PROM are blown by the application of a high-voltage pulse to the

device through a special pin.

A blown fuse defines a binary 0 state and an intact fuse gives a binary 1 state. This procedure allows the user to program the PROM in the laboratory to achieve

the desired relationship between input addresses and stored words. Special instruments called PROM programmers are available commercially to facilitate the procedure. In any case, all procedures for programming ROMs are hardware procedures, even though the word programming is used.

The hardware procedure for programming ROMs or PROMs is irreversible, and once

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Types of ROM

3. A third type of ROM is the erasable PROM, or EPROM, which can

be restructured to the initial state even though it has been programmed previously.

When the EPROM is placed under a special ultraviolet light for a

given length of time, the shortwave radiation discharges the internal floating gates that serve as the programmed connections.

After erasure, the EPROM returns to its initial state and can be

reprogrammed to a new set of values.

4. The fourth type of ROM is the electrically erasable PROM (EEPROM

or E2PROM ).

This device is like the EPROM, except that the previously

programmed connections can be erased with an electrical signal instead of ultraviolet light.

The advantage is that the device can be erased without removing it

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