Reflective Optical Sensor with Transistor Output

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Reflective Optical Sensor with Transistor Output

Description

The CNY70 has a compact construction where the emitting light source and the detector are arranged in the same direction to sense the presence of an object by using the reflective IR beam from the object. The operating wavelength is 950 nm. The detector consists of a phototransistor.

Applications

DOptoelectronic scanning and switching devices i.e., index sensing, coded disk scanning etc. (optoelectronic encoder assemblies for transmission sensing).

Features

DCompact construction in center-to-center spacing of 0.1’

DNo setting required DHigh signal output

DLow temperature coefficient DDetector provided with optical filter

DCurrent Transfer Ratio (CTR) of typical 5%

94 9320 95 10930 Marking aerea D E Top view

Order Instruction

Ordering Code Sensing Distance Remarks

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Vishay

Semiconductors

Absolute Maximum Ratings

Input (Emitter)

Parameter Test Conditions Symbol Value

Unit

Reverse voltage VR 5

V

Forward current IF 50

mA

Forward surge current t_p≤ 10 ms I_FSM 3

A

Power dissipation T_amb≤ 25°C P_V 100

mW

Junction temperature Tj 100

°C

Output (Detector)

Unit

Collector emitter voltage V_CEO 32

V

Emitter collector voltage V_ECO 7

V

Collector current I_C 50

mA

Power dissipation Tamb≤ 25°C PV 100

mW

Junction temperature Tj 100

°C

Coupler

Unit

Total power dissipation T_amb≤ 25°C P_tot 200

mW

Ambient temperature range T_amb –55 to +85 °

C

Storage temperature range Tstg –55 to +100

°C

Soldering temperature 2 mm from case, t ≤ 5 s Tsd 260

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Electrical Characteristics

(T

amb

= 25

°

C)

Input (Emitter)

Parameter Test Conditions Symbol Min. Typ. Max. Unit

Forward voltage IF = 50 mA VF 1.25 1.6 V

Output (Detector)

Collector emitter voltage I_C = 1 mA V_CEO 32 V

Emitter collector voltage I_E = 100 mA V_ECO 5 V

Collector dark current VCE = 20 V, If = 0, E = 0 ICEO 200 nA

Coupler

Collector current V_CE = 5 V, I_F = 20 mA, d = 0.3 mm (figure 1)

I_C1) _0.3 _1.0 _mA

Cross talk current VCE = 5 V, IF = 20 mA

(figure 1)

ICX2) 600 nA

Collector emitter satu-ration voltage

IF = 20 mA, IC = 0.1 mA,

d = 0.3 mm (figure 1)

VCEsat1) 0.3 V 1)_{Measured with the ‘Kodak neutral test card’, white side with 90% diffuse reflectance}

2)_{Measured without reflecting medium}

~~

~

~ ~

_~

A C C E

Detector Emitter

d _{(Kodak neutral test card)}Reflecting medium

95 10808

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Vishay

Semiconductors

Typical Characteristics

(T

amb

= 25

_

C, unless otherwise specified)

0 100 200 300 0 25 50 75 100 95 11071 P – T

otal Power Dissipation ( mW

)

tot

Tamb – Ambient Temperature ( °C )

Coupled device

Phototransistor

IR-diode

Figure 2. Total Power Dissipation vs. Ambient Temperature 0.1 1.0 10.0 100.0 1000.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF – Forward Voltage ( V ) 96 11862 F I – Forward Current ( mA )

Figure 3. Forward Current vs. Forward Voltage

0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 –30 –20 –10 0 10 20 30 40 50 60 70 80

Tamb – Ambient Temperature ( °C )

96 11913 CTR – Relative Current T ransfer Ratio rel VCE=5V IF=20mA d=0.3

Figure 4. Relative Current Transfer Ratio vs. Ambient Temperature 0.1 1 10 0.001 0.01 0.1 10 I – Collector Current ( mA ) C IF – Forward Current ( mA ) 100 95 11065 1

Kodak Neutral Card (White Side) d=0.3

VCE=5V

Figure 5. Collector Current vs. Forward Current

0.1 1 10

0.01 0.1 1 10

VCE – Collector Emitter Voltage ( V )

100

95 11066

I – Collector Current ( mA

)

C

Kodak Neutral Card (White Side) d=0.3 IF = 50 mA 20 mA 10 mA 5 mA 2 mA 1 mA

Figure 6. Collector Current vs. Collector Emitter Voltage

0.1 1.0 10.0 100.0 0.1 1.0 10.0 100.0 IF – Forward Current ( mA ) 96 11914

Kodak neutral card (white side) CTR – Current T ransfer Ratio ( % ) VCE=5V d=0.3

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0.1 1.0 10.0

0.1 1.0 10.0 100.0

VCE – Collector Emitter Voltage ( V )

96 12001

CTR – Current

T

ransfer Ratio ( % )

Kodak neutral card (white side) d=0.3 20mA 10mA 5mA 2mA 1mA IF=50mA

Figure 8. Current Transfer Ratio vs. Collector Emitter Voltage

0 2 4 6 8 0.001 0.1 1 10 I – Collector Current ( mA ) C d – Distance ( mm ) 10 95 11069 VCE=5V IF=20mA d

Figure 9. Collector Current vs. Distance

0.4 0.2 0 0.2 0.4

I – Relative Radiant Intensitye rel

0.6 95 11063 0.6 0.9 0.8 0° 30° 10 ° 20° 40° 50° 60° 70° 80° 0.7 1.0

I – Relative Collector Currentc rel

Figure 10. Relative Radiant Intensity/Collector Current vs. Displacement 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 1 2 3 4 5 6 7 8 9 10 11 s – Displacement ( mm ) 96 11915 VCE = 5 V IF = 20 mA

I – Relative Collector CurrentCrel

d = 5 mm 4 mm 3 mm 2 mm 1 mm 0 E D D E 1.5 d s 0 5mm 10mm s 0 5mm 10mm

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Vishay

Semiconductors

Dimensions of CNY70 in mm

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Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ).

The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of

ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency ( EPA ) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting