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Incomplete Charge Transfer in Overlapping Gates Charge Coupled Devices

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Figure

FIGURE  CAPTIONS  172
TABLE II  Numerical Values of Signal Degradation Factors for a p-channel  Minimum Geometry Two-phase CCD at one Megacycle Clock Frequency  Signal Degradation Factor Due to  Trapping in Interface States Under:  The storage gate £st  The transfer gate £tr  T
Figure  17.  Transient  currents  for  the  device  shown  at  the  top  0f  the  figure  operated  with  two-phase  push  clock
Figure  35.  Average  carrier  concentration  under  the  storage  gates  versus  transfer  time  for  the  fat  zero  and  signal  cha~ge

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