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Synthesis of titanium nitride for self aligned gate AlGaN/GaN heterostructure field effect transistors

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Figure

Figure 2 I-V characteristics and linear plot. The I-V characteristicsof the TiN Schottky diodes deposited with different N2/Ar ratios (a)and linear plot in the forward region (b).
Table 1 Comparison of Schottky properties of GaN diodeswith TiN and Ni electrodes
Figure 4b, the gate reverse leakage current increased from−5 −4

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