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Direct Growth of Single Crystalline GaN Nanowires on Indium Tin Oxide Coated Silica

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Figure

Fig. 1 Effect of annealing temperature on the electrical and physical characteristics of deposited ITO thin film.four-point probe after annealing at different temperatures
Fig. 2 a Schematic illustrating the growth of GaN nanowires on rough ITO surface. The inset shows an SEM plan view of the rough ITO surface afterthermal annealing
Fig. 3 TEM and elemental mapping of GaN nanowires grown on ITO layer.The red arrow indicates growth direction
Fig. 4 a Power-dependent measurement of GaN nanowires grown on Indium Tin Oxide performed at 10 K.substrate, annealed ITO layer on fused silica, and GaN nanowires grown on ITO layer;nanowires grown on ITO layer

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