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Broadband antireflective silicon nanostructures produced by spin coated Ag nanoparticles

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Figure

Figure 1 Calculated reflectance of Si nanostructures. Calculated (a) period- (i.e., distance between adjacent nanostructures) and (b) height-dependent reflectance of Si nanostructures as a function of wavelength when the height and period were fixed at 300
Figure 2a shows a schematic illustration of the processsteps to fabricate antireflective nanostructures on a Sisubstrate by inductively coupled plasma (ICP) etchingusing spin-coated Ag nanoparticles as the etch mask.The spin-coating process was performed at 5,000 rpmfor 20 s, and the sintering process was carried out at250°C on a hotplate for 5 min in order to transform the
Figure 3a shows the 45°-tilted-view SEM images of theSi nanostructures fabricated with spin-coated Ag inkhaving different ink ratios
Figure 4 SEM images of the Si nanostructures and the measuredhemispherical reflectance spectra
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