processes, which provides cost savings on system level and increases system reliability.

EasyPACK ^™ module with EDT2 IGBT and Diode and PressFIT / NTC Features

• Electrical features - Blocking voltage 750 V - Low V _CEsat

- Low switching losses - Low Q _g and C _rss - Low inductive design - T _vjop = 150 °C

• Mechanical features

- 4.2 kV DC 1 second insulation

- High creepage and clearance distances - High power density

- Integrated NTC temperature sensor - PressFIT contact technology - RoHS compliant

- UL 94 V0 module frame Potential applications

• Automotive applications

• (Hybrid) Electrical Vehicles (H)EV

• Motor drives Product validation

• Qualified according to AQG 324 Description

The FF300R08W2P2_B11A is a very compact and flexible product offering integrated isolation for the main inverter of hybrid and electric vehicles. The module uses the benchmark EDT2 IGBT generation allowing 750V blocking voltage and IcN of 300A.The chipset has benchmark current density combined with short circuit ruggedness for reliable inverter operation under harsh environmental conditions. The EDT2 IGBTs also show excellent light load power losses, which helps to improve system efficiency over a real driving cycle. The EDT2 IGBT was optimized for applications with switching frequencies in the range of 10 kHz.The EasyPACK ^TM package is qualified for automotive applications and is validated according to AQG 324. Its high power cycling capability as well as the high creepage and clearance distances add to the product reliability.

The power module comes with PressFIT Pins for the signal terminals to avoid additional time consuming selective solder processes, which provides cost savings on system level and increases system reliability.

Neuer Schaltplan für AP00H261

2

2020-07-13 restricted Copyright © Infineon Technologies AG 2020. All rights reserved.

Type Package Marking

FF300R08W2P2_B11A EasyPACK ^™ 2B Module SP005424885

Table of contents

Description . . . 1

Features . . . .1

Potential applications . . . 1

Product validation . . . 1

Table of contents . . . 2

1 Package . . . 3

2 IGBT, Inverter . . . 3

3 Diode, Inverter . . . 5

4 NTC-Thermistor . . . .6

5 Characteristics diagrams . . . 7

6 Circuit diagram . . . 10

7 Package outlines . . . .11

8 Module label code . . . 12

Revision history . . . 13

Disclaimer . . . .14

Table of contents

1 Package

Table 1 Maximum rated values

Parameter Symbol Note or test condition Values Unit

Maximum RMS module DC-

terminal current ¹⁾ I _tRMS T _Terminal = 105 °C, T _C = 65 °C 25 A

1) ItRMS: Current per pin, continous, steady state. Verified by characterization / design not by test

Table 2 Insulation coordination

Parameter Symbol Note or test condition Values Unit

Isolation test voltage V _ISOL 4.2 kV

Internal isolation basic insulation (class 1, IEC 61140) Al ₂ O ₃

Creepage distance d _Creep terminal to heatsink 11.5 mm

Creepage distance d _Creep terminal to terminal 6.3 mm

Clearance d _Clear terminal to heatsink 10.0 mm

Clearance d _Clear terminal to terminal 5.0 mm

Comparative tracking index CTI > 200

Table 3 Characteristic values

Parameter Symbol Note or test condition Values Unit

Min. Typ. Max.

Stray inductance module L _sCE 8.0 nH

Module lead resistance,

terminals - chip R _CC'+EE' T = 25°C, per switch 4.00 mΩ

Storage temperature T _stg -40 125 °C

Weight G 41 g

2 IGBT, Inverter

Table 4 Maximum rated values

Parameter Symbol Note or test condition Values Unit

Collector-emitter voltage V _CES T _vj = 25 °C 750 V

Implemented collector

current I _cN 300 A

Continuous DC collector

current I _{C nom} T _{vj max} = 150 °C T _H = 65 °C 200 A

Repetitive peak collector

current I _CRM t _P = 1 ms 600 A

Gate-emitter peak voltage V _GES ±20 V

1 Package

Table 5 Characteristic values

Parameter Symbol Note or test condition Values Unit

Min. Typ. Max.

Collector-emitter saturation

voltage V _{CE sat} I _C = 200 A, V _GE = 15 V T _vj = 25 °C 1.00 1.18 V

T _vj = 125 °C 0.99

T _vj = 150 °C 0.98

Gate threshold voltage V _GEth I _C = 6.4 mA, V _CE = V _GE T _vj = 25 °C 4.9 5.8 6.5 V

Gate charge Q _G V _GE = 15 V, V _CE = 400 V 2.9 µC

Internal gate resistor R _gint T _vj = 25 °C 1.1 Ω

Input capacitance C _ies f = 1 MHz, V _CE = 50 V,

V _GE = 0 V T _vj = 25 °C 53.0 nF

Output capacitance C _oes f = 1 MHz, V _CE = 50 V,

V _GE = 0 V T _vj = 25 °C 0.7 nF

Reverse transfer capacitance C _res f = 1 MHz, V _CE = 50 V,

V _GE = 0 V T _vj = 25 °C 0.20 nF

Collector-emitter cut-off

current I _CES V _CE = 750 V, V _GE = 0 V T _vj = 25 °C 1.0 mA

Gate-emitter leakage current I _GES V _GE = 0 V T _vj = 25 °C 10 nA

Turn-on delay time,

inductive load t _{d on} I _C = 200 A, V _CE = 400 V,

V _GE = 15 V, R _Gon = 2.4 Ω T _vj = 25 °C 0.21 µs

T _vj = 125 °C 0.23

T _vj = 150 °C 0.24

Rise time, inductive load t _r I _C = 200 A, V _CE = 400 V,

V _GE = 15 V, R _Gon = 2.4 Ω T _vj = 25 °C 0.03 µs

T _vj = 125 °C 0.04

T _vj = 150 °C 0.04

Turn-off delay time,

inductive load t _{d off} I _C = 200 A, V _CE = 400 V,

V _GE = 15 V, R _Goff = 5.1 Ω T _vj = 25 °C 0.70 µs

T _vj = 125 °C 0.80

T _vj = 150 °C 0.80

Fall time, inductive load t _f I _C = 200 A, V _CE = 400 V,

V _GE = 15 V, R _Goff = 5.1 Ω T _vj = 25 °C 0.06 µs

T _vj = 125 °C 0.10

T _vj = 150 °C 0.10

Turn-on energy loss per

pulse E _on I _C = 200 A, V _CE = 400 V,

L _σ = 20 nH, V _GE = 15 V, R _Gon = 2.4 Ω

T _vj = 25 °C 4.4 mJ

T _vj = 125 °C 7.0

T _vj = 150 °C,

di/dt = 6360 A/µs 7.6 Turn-off energy loss per

pulse E _off I _C = 200 A, V _CE = 400 V,

L σ = 20 nH, V _GE = 15 V, R _Goff = 5.1 Ω

T _vj = 25 °C 7.3 mJ

T _vj = 125 °C 10.7

T _vj = 150 °C,

du/dt = 2530 V/µs 11.5

2 IGBT, Inverter

Table 5 Characteristic values (continued)

Parameter Symbol Note or test condition Values Unit

Min. Typ. Max.

SC data I _SC V _CC = 400 V, V _GE = 15 V t _P ≤ 6.0 µs,

T _vj = 25 °C 3800 A

t _P ≤ 4.0 µs,

T _vj = 150 °C 3000

Thermal resistance, junction

to case R _thjc per IGBT 0.09 K/W

Thermal resistance, junction

to heatsink R _thjh per IGBT, λ _paste = 3 W /(m*K) / λ _grease = 3 W/

(m*K) 0.25 K/W

Temperature under

switching conditions T _{vj op} -40 150 °C

3 Diode, Inverter

Table 6 Maximum rated values

Parameter Symbol Note or test condition Values Unit

Repetitive peak reverse

voltage V _RRM T _vj = 25 °C 750 V

Implemented forward

current I _Fn 300 A

Continuous DC forward

current I _F 200 A

Repetitive peak forward

current I _FRM t _P = 1 ms 600 A

I ² t - value I ² t V _R = 400 V, t _P = 50 ms T _vj = 125 °C 15770 A²s

T _vj = 150 °C 13180

Table 7 Characteristic values

Parameter Symbol Note or test condition Values Unit

Min. Typ. Max.

Forward voltage V _F I _F = 200 A T _vj = 25 °C 1.30 1.47 V

T _vj = 125 °C 1.20

T _vj = 150 °C 1.15

Peak reverse recovery

current I _rm I _F = 200 A, V _CE = 400 V,

V _GE = -8 V T _vj = 25 °C 200 A

T _vj = 125 °C 294

T _vj = 150 °C,

-di _F /dt = 7250 A/µs 321

3 Diode, Inverter

Table 7 Characteristic values (continued)

Parameter Symbol Note or test condition Values Unit

Min. Typ. Max.

Recovered charge Q _r I _F = 200 A, V _CE = 400 V,

V _GE = -8 V T _vj = 25 °C 11.0 µC

T _vj = 125 °C 24.0

T _vj = 150 °C,

-di _F /dt = 7250 A/µs 29.0 Reverse recovery energy E _rec I _F = 200 A, V _CE = 400 V,

V _GE = -8 V, R _G = 2.4 Ω T _vj = 25 °C 3.34 mJ

T _vj = 125 °C 7.02

T _vj = 150 °C,

-di _F /dt = 7250 A/µs 8.51 Thermal resistance, junction

to case R _thjc per diode 0.17 K/W

Thermal resistance, junction

to heatsink R _thjh per diode, λ _paste = 3 W /(m*K) / λ _grease = 3 W/

(m*K) 0.36 K/W

Temperature under

switching conditions T _{vj, op} -40 150 °C

4 NTC-Thermistor

Table 8 Characteristic values

Parameter Symbol Note or test condition Values Unit

Min. Typ. Max.

Rated resistance R ₂₅ T _NTC = 25 °C 5 kΩ

Deviation of R ₁₀₀ ΔR/R T _NTC = 100 °C, R ₁₀₀ = 493 Ω -5 5 %

Power dissipation P ₂₅ T _NTC = 25 °C 20 mW

B-value B _25/50 R ₂ = R ₂₅ exp[B _25/50 (1/T ₂ -1/(298,15 K))] 3375 K

B-value B _25/80 R ₂ = R ₂₅ exp[B _25/80 (1/T ₂ -1/(298,15 K))] 3433 K

B-value B _25/100 R ₂ = R ₂₅ exp[B _25/100 (1/T ₂ -1/(298,15 K))] 3411 K

4 NTC-Thermistor

5 Characteristics diagrams

output characteristic (typical), IGBT, Inverter I _C = f(V _CE )

V _GE = -8 V / +15 V

output characteristic (typical), IGBT, Inverter I _C = f(V _CE )

T _vj = 25 °C

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0

50 100 150 200 250 300 350 400 450 500 550 600

0.0 0.4 0.8 1.2 1.6 2.0

0 50 100 150 200 250 300 350 400 450 500 550 600

transfer characteristic (typical), IGBT, Inverter I _C = f(V _GE )

V _CE = 20 V

switching losses (typical), IGBT, Inverter E = f(I _C )

R _Goff = 5.1 Ω, R _Gon = 2.4 Ω, V _CE = 400 V, V _GE = -8 V / +15 V

5 6 7 8 9 10 11

0 75 150 225 300 375 450 525 600

0 50 100 150 200 250 300 350 400

0

5

10

15

20

25

5 Characteristics diagrams

Switching losses (typical), IGBT, Inverter E = f(R _G )

V _CE = 400 V, V _GE = -8 V / +15 V, I _C = 200 A

transient thermal impedance , IGBT, Inverter Z _th = f(t)

0 2 4 6 8 10 12 14 16 18 20

0 4 8 12 16 20 24 28 32

0.001 0.01 0.1 1 10

0.001 0.01 0.1 1

Reverse bias safe operating area (RBSOA), IGBT, Inverter

I _C = f(V _CE )

T _vj = 150 °C, R _Goff = 5.1 Ω, V _GE = -8 V / +15 V

forward characteristic of (typical), Diode, Inverter I _F = f(V _F )

400 450 500 550 600 650 700 750 800 0

50 100 150 200 250 300 350 400 450 500 550 600 650

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0

100

200

300

400

500

600

5 Characteristics diagrams

switching losses (typical), Diode, Inverter E _rec = f(I _F )

R _Gon = R _Gon (IGBT) , V _CE = 400 V

Switching losses (typical), Diode, Inverter E _rec = f(R _G )

V _CE = 400 V, I _F = 200 A

0 100 200 300 400

0 2 4 6 8 10 12 14 16

0 2 4 6 8 10 12 14 16 18 20

1 2 3 4 5 6 7 8 9 10 11 12

transient thermal impedance , Diode, Inverter Z _th = f(t)

temperature characteristic (typical), NTC-Thermistor R = f(T _NTC )

0.001 0.01 0.1 1 10

0.001 0.01 0.1 1

0 20 40 60 80 100 120 140 160

100

1000

10000

100000

5 Characteristics diagrams

6 Circuit diagram

2

2020-07-13 restricted Copyright © Infineon Technologies AG 2020. All rights reserved.

G1

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T1 T2 G2

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E2

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2

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Figure 2

6 Circuit diagram

7 Package outlines

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15 16

A A

B B

C C

D D

E E

F F

G G

H H

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Erstellt durch Genehmigt von

Mat.-Nr.

Werkstoff Modellreferenz inkl. Rev.

Rev.

00

Titel (deu./engl.) & Beschreibung

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FF300R08W2P2_B11A-Datasheet

W00175000

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Zeichnung

DE/EN 1.0 / DE/EN 1.0 / Allgemeintoleranz nach

-

Ma stab

2 : 1

0001

FxxxRxxW2 xx

TM TM

Infineon Infineon

^GYYWW

EasyPIM

Drawing: W00175000

DIN EN ISO 1302 1. DIN 16742-TG6 2. DIN ISO 2768-mk DIN ISO

13715

edges general tolerances surface ISO 8015 principle of independency

dimensions ISO 14405 GG target geometry according CAD file with general tolerances 1

method of least-squares

All dimensions refer to module in delivery condition

00 Ersterstellung

Revision nderung Erstellt durch Genehmigt von Genehmigt am

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C1 G1 E1

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4 2 ,5 0 ,1 5

22,7 0,3 16,4 0,2

4,5 0,1

2,3

-0,1

x8,5

+0,3

51 0,15

- Pin-Grid 3,2mm

- Tolerance of PCB hole pattern

- Hole specification for contacts see AN 2009-01

- Diameters of drill 1,15mm and copper thickness in hole 25-50 m 0,1

PCB hole pattern

2x 9 according to screw head / washer 0 3,2 6,4 9,6 12,8 16 21,25 26,5 3,2 6,4 9,6 12,8 16 21,25 26,5

0 1, 6

8 11 ,2

2 0 ,8 2 4 2 5 ,5 1, 6 8 17 ,6 2 0 ,8 2 4 2 5 ,5

2,8 4x

Figure 3

FF300R08W2P2_B11A

EasyPACK ^™ module

7 Package outlines

8 Module label code

Module label code

Code format Data Matrix Barcode Code128

Encoding ASCII text Code Set A

Symbol size 16x16 23 digits

Standard IEC24720 and IEC16022 IEC8859-1

Code content Content

Module serial number Module material number Production order number Date code (production year) Date code (production week)

Digit 1 – 5 6 - 11 12 - 19 20 – 21 22 – 23

Example 71549 142846 55054991 15 30

Example

Packing label code

Code format Barcode Code128

Encoding Code Set A

Symbol size 34 digits

Standard IEC8859-1

Code content Content

Module serial number Module material number Production order number Date code (production year) Date code (production week)

Identifier X

1T S 9D Q

Digit 2 – 9 12 – 19 21 – 25 28 – 31 33 – 34

Example 95056609 2X0003E0 754389 1139 15 Example

X950566091T2X0003E0S754389D1139Q15 71549142846550549911530 71549142846550549911530

Figure 4

8 Module label code

Revision history

Document revision Date of release Description of changes

V1.0 2020-07-24 Target Datasheet

1.00 2021-07-29 Final datasheet

Revision history

Edition 2021-07-29 Published by

Infineon Technologies AG 81726 Munich, Germany

© 2021 Infineon Technologies AG All Rights Reserved.

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