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Chemically Modulated Graphene Diodes

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Figure

Figure 1. Fabrication process of a GDS. (a) The source electrodes aredeposited immediately after native silicon oxide removal to give ohmiccontacts
Figure 2. (a) Photograph and SEM image of a GDS. On the right the gold contact on the SiOSi are seen
Figure 4. Change of Rs in GDS exposed to various aromatic molecules. (a) Variation of the series resistance (Rs) for n-Si and p-Si GDS's uponexposure to liquid aromatic molecules
Figure 5. Electrical characteristics of n-Si GDS exposed to NHGDS in 1, 2, and 4% concentration of NH3
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