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Physical characterisation of 3C SiC(001)/SiO2 interface using XPS

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Figure

Fig. 1. Transfer curves for 1300°C oxidized devices with various conditions (V           ds=0.1 V)
Fig. 3. N 1s XPS spectrum with possible bonds
Table 2. Chemical bonds concentration at the studied 3C-SiC/SiO2 interfaces

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