Maxim Integrated Products 1

(1)

``````````````````````````````````` গၤ

3ሤᐜ૵དࣅ໭NBY9922፿᎖఼ᒜࣶሤᄴݛଢ଼ኹᓞધ໭።

፿ᒦࡼ৖ൈ NPTGFUǈඛሤభᄋ৙঱ࡉ 41B ၒ߲࢟ഗă

NBY9922ਜ਼NBY9921B )ࣶሤ࢟Ꮞ఼ᒜ໭*๼੝ဧ፿భᄋ৙

঱ ቉ Ă ࢅ ߅ ۾ ࡼ ஊ ௼ ऱ ښ ǈ း ੝ ৉ ᒬ ࣶ ሤ ৙ ࢟ ። ፿ ă

NBY9922Ꮴ኏঱ࡉ37Wࡼᇹᄻၒྜྷ࢟ኹǈඛৈNPTGFUད

ࣅ໭࣒ถདࣅ4111qGྏቶঌᏲǈ݀௥ᎌ22otࡼ࢜ቯ࿟ဍਜ਼

ሆଢ଼ဟମă

NBY9922ૹ߅ᔈး።ᒇᄰۣઐ࢟വభܜ඾Đ঱ܟNPTGFU

ਈࣥᒗࢅܟNPTGFUࡴᄰđၾზਭ߈ࡼᒇᄰ࢟ഗă഍ᅪǈ

થభጲܠ߈ĐࢅܟNPTGFUਈࣥᒗ঱ܟNPTGFUࡴᄰđࡼዓ

ߕဟମǈᔢࡍሢࣞ࢐ᄋ঱೫ᓞધ቉ൈǈ݀భᎧ৉ᒬಢቯ

ࡼNPTGFU቏ᄴ৔ᔫă

NBY9634ၷሤདࣅ໭భऱܣ࢐ဍ଀ࡵNBY9922ăดᒙᔈ

௟औ૵਌భି࿩ᅪݝᏄୈၫǈဧถၒྜྷᄋ৙ഉ૚ࡼ࿟࢟

ၿኔ఼ᒜăNBY9922ᄋ৙ஂဏహମࡼ27፛୭RTPQॖᓤă

``````````````````````````````````` ።፿

ࠀಯ໭ਖ਼৙࢟

ࣶሤcvdlᓞધ໭

࢟ኹࢯஂ໭ෝ్)WSN*

ఎਈ࢟Ꮞ

ED.EDᓞધ໭ෝ్

``````````````````````````````````` ᄂቶ

♦ ၷሤᄴݛଢ଼ኹདࣅ໭

♦ ดᒙcpputusbqऔ૵਌

♦ ᇹᄻၒྜྷ࢟ኹ঱ࡉ37W

♦ ᐜ૵དࣅख़ᒋ࢟ഗǖ7B

♦ ඛሤభᄋ৙41B࢟ഗ

♦ 1/5Ω01/:ΩࢅܟĂ1/8Ω02/1Ω঱ܟདࣅ໭)࢜ቯᒋ*

♦ ঌᏲᆐ4111qGဟǈ࢜ቯ࿟ဍ0ሆଢ଼ဟମᆐ22ot

♦ ᔈး።ႌཌဟମ఼ᒜ

♦ ፿ઓభܠ߈ዓߕဟମ

♦ ဧถ৖ถǈਈࣥෝါሆஸზ࢟ഗᆐ1/15μB!)࢜ቯᒋ*

♦ ஂဏహମࡼ27፛୭ᇄ໺RTPQॖᓤ

NBY9922

ดᒙᔈ௟औ૵਌

________________________________________________________________ Maxim Integrated Products 1

16 15 14 13 12 11 10 9 1 2 3 4 5 6 7 8 BST1 BST2 DH2 LX2 VL2 DL2 PGND2 PWM2 PWM1 TOP VIEW MAX8811 QSOP DH1 LX1 PGND1 VL1 DL1 EN DLY +

``````````````````````````````` ፛୭๼ᒙ

``````````````````````````````` ࢾ৪ቧᇦ

DH1 VL2 2 13 DLY 8 EN 7 PWM1 9 PWM2 10 VL1 4 1 3 5 6 DL1 LX1 BST1 OUTPUT PGND1 MAX8811 DH2 15 16 14 12 11 DL2 LX2 BST2 PGND2 + POWER INPUT UP TO 26V GATE-DRIVE SUPPLY 4.5V TO 7V OFF ON PWM CONTROL SIGNALS

``````````````````````````` ࢜ቯ৔ᔫ࢟വ

PART TEMP RANGE PIN-PACKAGE

PKG CODE

MAX8811EEE+ -40°C to +85°C 16 QSOP E16-4 ,ܭာᇄ໺ॖᓤă

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NBY9922

ABSOLUTE MAXIMUM RATINGS

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

DLY, EN, PWM_, DL_ to PGND_...-0.3V to (VVL_+ 0.3V) BST_ to PGND_ ...-0.3V to (VLX_+ 8V) BST_ to VL_ ...-1V to +30V LX_ to PGND_...-1V to +28V DH_ to PGND_...-0.3V to (VBST_+ 0.3V) DH_, BST_ to LX_ ...-0.3V to +8V VL_ to PGND_ ...-0.3V to +8V DH_, DL_ Current ... ±200mA RMS

VL_ to BST_ Internal Diode Current ...±50mA RMS PGND1 to PGND2 ...-0.3V to +0.3V Continuous Power Dissipation (TA= +70°C)

16-Pin QSOP (derate 8.3 mW/°C above +70°C)...666.7 mW Operating Temperature Range ...-40°C to +85°C Junction Temperature ...+150°C Storage Temperature Range ...-65°C to +150°C Lead Temperature (soldering, 10s) ...+300°C

ELECTRICAL CHARACTERISTICS

(VDLY= VEN= VBST_= VVL_= 6.5V, VPGND_= VLX_= VPWM_= 0V, TA= -40°C to +85°C, unless otherwise noted. Typical values are

at TA= +25°C.) (Note 1)

PARAMETER CONDITIONS MIN TYP MAX UNITS

GENERAL

VL_ Input Voltage Range 4.5 7 V LX Operating Range 26 V VL_ Undervoltage Lockout

(UVLO) VVL_ rising, 250mV hysteresis (typ) 3.25 3.8 V

VPWM__= 0V 0.7 1.5

Supply Current (per Channel)

IBST_ + IVL_ VPWM__ = VDLY = VVL_ 1.4 2

mA Shutdown Supply Current

(per Channel) IBST_ + IVL_ VEN = 0V, VPWM_ = 0VorVVL_ 0.04 1 μA

PWM_

Input Leakage VPWM_ = 0V or 7.0V, VEN = 0V or 7.0V 0.01 μA

Input Voltage High Threshold 3.5 V Input Voltage Low Threshold 1.2 V Input Threshold Hysteresis 20 %

EN

Input Leakage VPWM_ = 0V or 7.0V, VEN = 0V or 7.0V 0.01 μA

Input Voltage High Threshold 2.6 V Input Voltage Low Threshold 0.8 V Input Voltage Hysteresis 0.5 V

DLY

Delay Disable Threshold

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ELECTRICAL CHARACTERISTICS (continued)

(VDLY= VEN= VBST_= VVL_= 6.5V, VPGND_= VLX_= VPWM_= 0V, TA= -40°C to +85°C, unless otherwise noted. Typical values are

at TA= +25°C.) (Note 1)

PARAMETER CONDITIONS MIN TYP MAX UNITS

GATE DRIVER SPECIFICATIONS

VPWM_ = VVL_,

sourcing current VBST_ = 6.5V, IDH_ = -0.1A 1.0 1.6 DH_ Driver Resistance

VPWM_ = 0V,

sinking current VBST_ = 6.5V, IDH_ = 0.1A 0.7 1.1 VPWM_ = 0V,

sourcing current VVL_ = 6.5V, IDL_= -0.1A 0.9 1.5 DL_ Driver Resistance

VPWM_ = VVL_,

sinking current VVL_= 6.5V, IDL_= 0.1A 0.4 0.7

Ω

DH_ Rise Time (trDH) VPWM_ = VVL_ VBST_ = 6.5V, 3000pF load 14 ns

DH_ Fall Time (tfDH) VPWM_ = 0V VBST_ = 6.5V, 3000pF load 9 ns

DL_ Rise Time (trDL) VPWM_ = 0V VVL_ = 6.5V, 3000pF load 11 ns

DL_ Fall Time (tfDL) VPWM_ = VVL_ VVL_ = 6.5V, 3000pF load 8 ns

VPWM_ falling (tpDHf) 20 DH_ Propagation Delay VPWM_ = VVL _ , VDL _ falling (tpDHr) VBST_ = 6.5V 14 ns VPWM_ rising (tpDLf) 12 DL_ Propagation Delay VPWM_ = GND, LX falling (tpDLr) VBST_ - VLX_ = 6.5V 16 ns

INTERNAL BOOST DIODE SPECIFICATIONS

On-Resistance IBST_ = 40mA 6 Ω

THERMAL SHUTDOWN

Thermal Shutdown Rising temperature, hysteresis = 15°C (typ) +165 °C

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NBY9922

`````````````````````````````````````````````````````````````````````` ࢜ቯ৔ᔫᄂቶ

(VVL1= VVL2= VEN= VDLY= 6.5V, 3000pF capacitive load, TA= +25°C, unless otherwise noted.)

0 200 100 400 300 600 500 700 0 200 400 600 800 1000

VL_ POWER DISSIPATION vs. PER-PHASE SWITCHING FREQUENCY MAX8811toc01 fS (kHz) VL_ POWER DISSIPATION (mW) 0 150 50 100 250 200 350 300 400 1000 3000 5000 7000 VL_ POWER DISSIPATION vs. LOAD CAPACITANCE MAX8811toc02 DH/DL LOAD CAPACITANCE (pF) VL_ POWER DISSIPATION (mW) fSW = 200kHz 0 15 5 10 20 25 30 1000 3000 5000 7000 DL RISE/FALL vs. LOAD CAPACITANCE MAX8811toc03 LOAD CAPACITANCE (pF) RISE/FALL TIME (ns) fSW = 200kHz DL RISE DL 0 15 5 10 20 25 30 0 2000 4000 6000 8000 DH RISE/FALL TIME vs. LOAD CAPACITANCE MAX8811toc04 LOAD CAPACITANCE (pF) RISE/FALL TIME (ns) DH RISE DH FALL 0 4 2 8 6 12 10 14 16 -40 -15 10 35 60 85

RISE AND FALL TIMES vs. TEMPERTURE MAX8811toc05 TEMPERATURE (°C) TIME (ns) DH RISE DL RISE DL FALL DH FALL 3000pF LOAD 0 60 20 40 80 100 120 0 200 400 600 800 1000

VL_ SUPPLY CURRENT vs. PER-PHASE SWITCHING FREQUENCY

MAX8811toc06

fS (kHz)

VL_ SUPPLY CURRENT (mA)

0 20 10 5 15 25 -40 -15 10 35 60 85 PROPAGATION DELAY vs. TEMPERATURE MAX8811toc07 TEMPERATURE (°C) TIME (ns) tpDHf tpDLr tpDLf tpDHr 0 60 40 20 80 100 120 0 10 20 30 40 50 60 70 80 90 100 PROGRAMMABLE DELAY vs. RDLY MAX8811toc11 RDLY (kΩ) DELAY (ns)

(5)

``````````````````````````````````````````````````````````````````` ࢜ቯ৔ᔫᄂቶ)ኚ*

(VVL1= VVL2= VEN= VDLY= 6.5V, 3000pF capacitive load, TA= +25°C, unless otherwise noted.)

```````````````````````````````````````````````````````````````````````````` ፛୭ႁී

1 BST1 2 DH1 3 LX1 4 VL1 5 DL1 6 PGND1 7 EN 8 DLY 9 PWM1 10 PWM2 11 PGND2 12 DL2 13 VL2 14 LX2 15 DH2 16 BST2 ፛୭ ෗߂ ৖ถ ࢒2ሤᔈ௟࢟ྏೌ୻࣡ǈᏴCTU2ᎧMY2ᒄମೌ୻ጙৈ1/33μGჿࠣ࢟ྏă ࢒2ሤ঱ܟᐜ૵དࣅၒ߲ǈਈࣥਜ਼VWMP໐ମEI2ۻ౯ࢅă ࢒2ሤ࢟ঢೌ୻࣡ă EM2ᐜ૵དࣅ࢟ᏎǈWM2ೌ୻ᒗ5/6Wࡵ8W࢟ᏎăܘኍᏴᅪݝ୓WM2ਜ਼WM3ೌ୻Ᏼጙ໦ǈ።ဧ፿3/3μG૞ৎࡍ ࡼჿࠣ࢟ྏ୓WM20WM3๬വᒗ৖ൈ࢐ă ࢒2ሤࢅܟᐜ૵དࣅၒ߲ǈਈࣥਜ਼VWMP໐ମEM2ۻ౯ࢅă EM2৖ൈ࢐ǈ୓QHOE2ਜ਼QHOE3୻ᒗJDࡼ৖ൈ࢐ă ဧถၒྜྷǈདࣅFOᆐ঱࢟ຳဟᑵޟ৔ᔫǈᆐࢅ࢟ຳဟਈࣥă ዓߕ࿸ᒙၒྜྷǈᏴEMZਜ਼QHOE2ᒄମೌ୻ጙৈ࢟ᔜ፿౶࿸ᒙEMሆଢ଼ᎧEI࿟ဍᒄମࡼႌཌဟମǈ૞୓EMZ ୻ᒗWM2ဧ፿ལဏዓߕဟମă ࢒2ሤQXN൝૷ၒྜྷǈQXN2ᆐ঱࢟ຳဟEI2ᆐ঱ǗQXN2ᆐࢅ࢟ຳဟEM2ᆐ঱ă ࢒3ሤQXN൝૷ၒྜྷǈQXN3ᆐ঱࢟ຳဟEI3ᆐ঱ǗQXN3ᆐࢅ࢟ຳဟEM3ᆐ঱ă EM3৖ൈ࢐ǈ୓QHOE2ਜ਼QHOE3୻ᒗJDࡼ৖ൈ࢐ă ࢒3ሤࢅܟᐜ૵དࣅၒ߲ǈਈࣥਜ਼VWMP໐ମEM3ۻ౯ࢅă EM3ᐜ૵དࣅ࢟ᏎǈWM3ೌ୻ᒗ5/6Wࡵ8W࢟ᏎăܘኍᏴᅪݝ୓WM2ਜ਼WM3ೌ୻Ᏼጙ໦ă።ဧ፿3/3μG૞ᑗৎ ࡍࡼჿࠣ࢟ྏ୓WM20WM3๬വᒗ৖ൈ࢐ă ࢒3ሤ࢟ঢೌ୻࣡ă ࢒3ሤ঱ܟᐜ૵དࣅၒ߲ǈਈࣥਜ਼VWMP໐ମEI3ۻ౯ࢅă ࢒3ሤࡼᔈ௟࢟ྏೌ୻࣡ǈᏴCTU3ᎧMY3ᒄମೌ୻ጙৈ1/33μGჿࠣ࢟ྏă SWITCHING WAVEFORMS MAX8811toc09 VLX 10V/div VDH 5V/div VDL 5V/div VPWM 5V/div 100ns/div VBST_ AND VL_ WAVEFORMS MAX8811toc10 VL (AC-COUPLED) 500mV/div VLX 10div VBST (AC-COUPLED) 200mV/div 1μs/div fSW = 250kHz

(6)

NBY9922

PWM DL LX DH tpDLf tpDHf tfDL tpDHr tpDLr trDL trDH tfDH

*WHEN RDLY IS USED, tpDHr BECOMES THE USER-PROGRAMMABLE TIME DELAY, tDLY. DRAWING IS NOT TO SCALE.

(tDLY)* MAX8811 PHASE 2 PHASE 1 UVLO EN LOGIC EN VL1 VL2 PWM2 PWM1 BST1 DH1 LX1 VL1 DL1 PGND1 DHON DHLO DLON DLLO LX1 LOW DETECT BST2 DH2 LX2 VL2 DL2 PGND2 DHON DHLO DLON DLLO LX2 LOW DETECT ᅄ2/! ৖ถౖᅄ ᅄ3/! དࣅ໭ဟኔᅄ

(7)

``````````````````````````````` ሮᇼႁී

৔ᔫᏇಯ

NPTGFUᐜ૵དࣅ໭)EI`ĂEM`*

QXN`ᆐ঱࢟ຳဟǈEI`ۻདࣅᆐ঱࢟ຳǗQXN`ᆐࢅ࢟

ຳဟǈEM`ۻདࣅᆐ঱࢟ຳăݙሰ።౑ࣞቃ᎖31ot! )࢜ቯ

ᒋ*ࡼQXN൴ߡǈᑚᒬ༽ౚሆݙखညఎਈࣅᔫă

ࢅܟདࣅ໭)EM`*௥ᎌ࢜ቯᒋᆐ 1/:Ω ࡼᏎ߲ࢀ቉࢟ᔜਜ਼

1/5Ωࡼᇢ࢟ഗࢀ቉࢟ᔜǈདࣅ4111qGྏቶঌᏲဟ࢜ቯ࿟

ဍဟମᆐ22otǈ࢜ቯሆଢ଼ဟମᆐ9otă঱ܟདࣅ໭)EI`*௥

ᎌ࢜ቯᒋᆐ2/1

ΩࡼᏎ߲ࢀ቉࢟ᔜਜ਼1/8Ωࡼᇢ࢟ഗࢀ቉࢟

ᔜǈདࣅ4111qGྏቶঌᏲဟ࢜ቯ࿟ဍဟମᆐ25otǈ࢜ቯሆ

ଢ଼ ဟ ମ ᆐ : o t ă ୷ ঱ ࡼ ఎ ਈ Ⴅ ࣞ ଢ଼ ࢅ ೫ ఎ ਈ Ⴜ ੒ ǈ ဧ

NBY9922భಯሯ፿᎖঱ຫĂ঱ၒ߲࢟ഗᇹᄻă

ᒇᄰۣઐ

໭ୈ௥ᎌᔈး።ᒇᄰۣઐ৖ถǈభጲᏴ঱ܟNPTGFUਈࣥ

ᒗࢅܟNPTGFUࡴᄰࡼၾზਭ߈ᒦᄋ৙ۣઐăࡩMY࢟ኹ

ࢰൢᒗ3/6Wጲሆǈ૞ளਭ246ot࢜ቯዓߕઁࡌఎࢅܟདࣅ

໭ăऎ༦ǈࢅܟNPTGFUਈࣥᎧ঱ܟNPTGFUࡴᄰᒄମࡼ

ዓߕဟମથభᄰਭS2࢟ᔜࢯஂ)༿ݬఠ࿸ᒙႌཌဟମݝॊ*ă

་ኹჄࢾ)VWMP*

ࡩWM20WM3࣡࢟ኹࢅ᎖VWMPඡሢᒋဟǈჅᎌདࣅ໭ၒ߲

௿ۣߒࢅ࢟ຳǈభऴᒏ࢟Ꮞ࢟ኹਭࢅĂᇄजᑵޟ৔ᔫဟ

߲ሚఎਈ༤ધă

ེۣઐ

ེਭᏲۣઐభሢᒜNBY9922ࡼᔐ৖੒ǈࡩஉᆨިਭ,276°D

ဟǈདࣅ໭ࡼჅᎌၒ߲࣒ۣߒᆐࢅ࢟ຳăஉᆨሆଢ଼26

°D

)࢜ቯᒋ*ઁǈJDૂআᑵޟ৔ᔫă

ᔈ௟࢟ྏኡᐋ

NBY9922ಽ፿ᔈ௟࢟വᆐ঱ܟདࣅ໭)EI`*৙࢟ăჅኡᐋ

ࡼ঱ܟNPTGFU௼ࢾ೫ሤ።ࡼᔈ௟࢟ྏǈ௥ᄏၫᒋ༿ږᑍ

ጲሆ৛ါཀྵࢾǖ

໚ᒦ R

_HBUF

ဵ঱ܟ NPTGFU ᐜ૵ᔐ࢟੗ǈ

ΔW

CTU

ဵ঱ܟ

NPTGFU དࣅ࢟ኹᏤ኏ࡼܤછ೟ăཀྵࢾ D

CTU

ဟǈኡᐋ

ΔW

CTU

ᆐ1/2Wᒗ1/3Wă።ဧ፿ࢅFTSࡼჿࠣ࢟ྏă

WM`ᅓẮ

WM2ਜ਼WM3ᆐࢅܟདࣅ໭৙࢟ăࡩEM`ᆐ঱࢟ຳဟǈWM`

࣡ࡼᅓẮ࢟ྏથᆐCTU࢟ྏߠ࢟ăፐࠥǈWM`ᅓẮ࢟ྏD4

።ᔗ৫ࡍǈጲܣ୓ఎਈᓞધဟࡼᆬ݆࢟ኹଢ଼ࡵᔢࢅăWM

࢟ྏࡍᏖᆐCTU࢟ྏࡼလ۶ă

C

Q

V

BST GATE BST

=

Δ

DESIGNATION DESCRIPTION MANUFACTURER

C1 2 x 10μF ±20%, X7R 25V capacitor 12103D106MAT2W AVX C2 2 x 10μF ±20%, X7R 25V capacitor 12103D106MAT2W AVX C3 2.2μF ±20%, 10V X5R capacitor GRM39X5R225K10 Murata C4, C5 0.22μF ±20%, 10V X7R capacitors GRM39X7R224K10 Murata C6–C9 100μF ±20%, 6.3V X5R capacitors C3225X5R0J107M TDK L1, L2 0.2μH, 28A inductors FDV0630-R20M,1.9mΩ DCR TOKO Q1, Q3 HAT2168, 8mΩ, 30V MOSFET Renesas Q2 2 x HAT2164H, 3mΩ, 30V, MOSFET Renesas Q4 2 x HAT2164H, 3mΩ, 30V MOSFET Renesas R1 Dead-time delay programming resistor; see Programmable Delay vs. RDLY in the Typical Operating Characteristics

—

ܭ2/! ᅄ4Ⴥာ911lI{Ă31B0ሤ࢜ቯ።፿࢟വ

ࡼᏄୈ

(8)

NBY9922

࿸ᒙႌཌဟମ

ኡᐋལဏዓߕဟମဟ።୓EMZೌ୻ࡵWM`ǈ࢜ቯᒋᆐ25otă

ྙኊଝࡍࢅܟNPTGFUਈࣥᎧ঱ܟNPTGFUࡴᄰᒄମࡼዓ

ߕဟମǈ።ᏴEMZਜ਼QHOE2ᒄମೌ୻ጙৈ࢟ᔜăዓߕဟ

ମਜ਼࢟ᔜࡼਈᇹᅄ༿ݬఠ࢜ቯ৔ᔫᄂቶݝॊǈ࢟ᔜᒋଐ

Ⴏ৛ါᆐǖ

t

DLY

= 14μs + (1pF) x R

DLY

ܜ඾eW0euࡴᒘࢅܟNPTGFUࡴᄰ

঱ ၒ ྜྷ ࢟ ኹ ဟ ǈ ঱ ܟ N P T G F U ࡼ ౐ Ⴅ ࡴ ᄰ ્ ဧ ࢅ ܟ

NPTGFUധ૵߲ሚ୷঱ࡼeW0euǈ࠭ऎࡴᒘࢅܟNPTGFUၾ

ମࡴᄰă঱eW0eu୓ဧ࢟ഗഗਭࢅܟNPTGFUࡼඳಗ࢟ྏ

)D

STT

*ਜ਼ၒྜྷ࢟ྏ)D

JTT

*ăྙਫኡᐋ೫D

STT

0D

JTT

୷঱ࡼࢅ

ܟNPTGFUǈ୓્ࡴᒘᆰᄌৎଝዏᒮăᆐ೫ܜ඾ᑚጙᆰᄌǈ

ኡᐋࢅܟNPTGFUဟገᄂܰᓖፀ໚D

_STT

0D

_JTT

ăᏴCTU`ਜ਼

CTU`࢟ྏᒄମࠈྜྷ࢟ᔜถଢ଼ࢅ঱ܟNPTGFUࡼࡴᄰႥࣞă

Ᏼ঱ܟ NPTGFU ᐜ૵ਜ਼Ꮞ૵ᒄମ݀ྜྷ࢟ྏ௥ᎌᄴዹࡼ቉

ਫǈࡣᑚೝᒬऱज࣒ጲᐐࡍఎਈႼ੒ᆐࡔଥă

``````````````````````````````` ።፿ቧᇦ

৖੒

JD৖੒ᓍገ౶ᔈ᎖NPTGFUࡼఎਈݷᔫǈဵఎਈຫൈਜ਼Ⴥ

ኡNPTGFUᐜ૵ᔐ࢟੗ࡼ਽ၫăࡩೝৈདࣅ໭࣒஠ቲఎਈ

ࣅᔫဟǈᔐ৖੒ྙሆǖ

໚ᒦg

_T

ᆐఎਈຫൈǈR

_H`UPUBM`IT

ᆐ঱ܟNPTGFUࡼᐜ૵

ᔐ࢟੗ǈR

H`UPUBM`MT

ᆐࢅܟNPTGFUࡼᐜ૵ᔐ࢟੗ǈO

ᆐ݀ೊࡼ঱ܟNPTGFUၫ೟ǈNᆐ݀ೊࡼࢅܟNPTGFUၫ

೟ǈW

WM

ᆐWM࣡࢟ኹǈS

IT

ᆐ঱ܟNPTGFUࡼࡴᄰ࢟ᔜǈ

S

_H`MT

ᆐࢅܟNPTGFUࡼᐜ૵࢟ᔜă

P f N Q R R R N M x Q R R R M V V I IC S G TOTAL HS HS HS G HS G TOTAL LS LS LS G LS PV VCC VCC = × × × × + + × +

(

)

× + × 2 [ ( / ) / ] _ _ _ _ _ _ _

DESIGNATION DESCRIPTION MANUFACTURER

C1 2 x 10μF ±20%, X7R 25V capacitor 12103D106MAT2W AVX C2 2 x 10μF ±20%, X7R 25V capacitor 12103D106MAT2W AVX C3 2.2μF ±20%, 10V X5R capacitor GRM39X5R225K10 Murata C4, C5 0.22μF ±20%, 10V X7R capacitors GRM39X7R224K10 Murata C6, C7, C8 2700μF ±20%, 6.3V capacitors MFZ series, 7mΩ max ESR Rubycon L1, L2 T50183, 250nH inductors at 35A ±20%, 0.68mΩ DCR Falco Electronics Q1 2 x HAT2168, 8mΩ, 30V MOSFET Renesas Q2 2 x HAT2164H, 3mΩ, 30V MOSFET Renesas Q3 2 x HAT2168, 8mΩ, 30V MOSFET Renesas Q4 2 x HAT2164H, 3mΩ, 30V MOSFET Renesas

ܭ3/! ᅄ5Ⴥာ411lI{Ă41B0ሤ࢜ቯ።፿࢟വ

ࡼᏄୈ

(9)

QDCݚ௜

NBY9922ᄰਭᏎ߲ਜ਼ᇢ၃ࡍ࢟ഗདࣅNPTGFU஠ቲ঱Ⴅ

༤ધăྙਫ඗ᎌ੪ੑ࢐఼ᒜ፛ሣޠࣞਜ਼ᔜఝǈ୷঱ࡼej0eu

୓્ޘညᇄज୻၊ࡼᑩഅăᏴဧ፿NBY9922஠ቲ࿸ଐဟǈ

୐ፇᔥክጲሆQDCݚ௜ਖᐌǖ

2* ჅᎌᅓẮ࢟ྏኍ஧భถణதሤ።፛୭हᒙă

3* ࠭ၒྜྷ࢟ྏᑵ࣡ளਭ঱ܟNPTGFUĂࢅܟNPTGFUࡵၒ

ྜྷ࢟ྏঌ࣡ࡼણവᎌ୷ࡍ࢟ഗǈ።ဧকણവࡼෂ૩ᔢቃă

4* Ᏼ NPTGFU ఎਈ਌ਜ਼࢟ঢএதᄋ৙ᔗ৫ࡼ१ᄵෂ૩ጲ

ଝ༓ྲེă

5* QHOE2ਜ਼QHOE3ጲ஧భถ࣢ࡼ፛ሣೌ୻ࡵࢅܟNPTGFU

Ꮞ૵࿟ă

6* ۣߒMY2ਜ਼MY3ᏐಭැঢࡼෝผᏄୈਜ਼ஂ࢛ă

7* ᐜ૵དࣅሣ౑ࣞᒗ࿩ᆐ31njmǈ።஧భถ࣢Ă݀༦ݧ፿

ஜẮ੝ǈጲଢ଼ࢅ FNJ ਜ਼঱ຫᐜ૵ᐅဉޘညࡼᑩഅăሤ

೺ࡼEI`ਜ਼MY`ೌሣ።ݧ፿ஜẮ੝ă

NBY9922ຶৰۇᄋ৙೫ጙৈ࢟വۇݚ௜पಿă

``````````````````````````````` በຢቧᇦ

PROCESS: BiCMOS

(10)

NBY9922

DH1 DLY VL2 EN PWM1 PWM2 VL1 DL1 LX1 BST1 VOUT PGND1 MAX8811 DH2 DL2 LX2 BST2 PGND2 VIN = 12V GATE-DRIVE SUPPLY 4.5V TO 7V OFF ON PWM CONTROL SIGNALS R1 C3 C4 C1 C6 C7 C8 C9 C5 Q4 Q3 Q2 Q1 L2 C2 L1 ᅄ4/! 911lI{Ă31B0ሤ࢜ቯ።፿࢟വ DH1 DLY VL2 EN PWM1 PWM2 VL1 DL1 LX1 BST1 VOUT PGND1 MAX8811 DH2 DL2 LX2 BST2 PGND2 VIN = 12V GATE-DRIVE SUPPLY 4.5V TO 7V OFF ON PWM CONTROL SIGNALS C3 C4 C1 C6 C7 C8 C5 Q4 Q3 Q2 Q1 L2 C2 L1 ᅄ5/! 411lI{Ă41B0ሤ࢜ቯ።፿࢟വ

(11)

QSOP.EPS

F 11 21-0055

PACKAGE OUTLINE, QSOP .150", .025" LEAD PITCH

`````````````````````````````````````````````````````````````````````````````

ॖᓤቧᇦ

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Nbyjn

۱யێူࠀ

۱ய 9439ቧረ ᎆᑶܠ൩ 211194

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࢟જǖ121.7322 62::

ࠅᑞǖ121.7322 63::

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