M E M O R Y
D R A M M o d u l e s
P r o d u c t I n f o r m a t i o n 2 0 0 4
I n c l u d i n g
D D R 2 M o d u l e s
w w w . i n f i n e o n . c o m / m e m o r y
One-Stop-Shopping for DRAM Modules
J U N E 2 0 0 4 . As a leading memory products supplier, we offer an extensive range of leading-edge DRAM modules. These DRAM modules come in a variety of designs and densities to meet your application-specific needs.
W H E T H E R Y O U ’ R E L O O K I N G to ramp up speed, increase density, or extend battery life, you’ll find answers in this brochure. Many of our DRAM modules now also come in green packages, enabling you to get a head start on upcoming environmental regulations.
The following table covers all products and densities available:
Range of typical applications
Short introduction of Fully Buffered DIMMs, MicroDIMMs, and Mini-DIMMs Upcoming technical and product-related trends
DDR2 module details DDR module information
Package-based information such as chip-sized package and stacked die technology Green (lead and halogen-free), more environmentally friendly modules
I n t r o d u c t i o n
A p p l i c a t i o n s
Unbuffered DIMM
Memory that does not contain buffers or registers located on the module. ( Number of pins: DDR2 = 240, DDR = 184, SDR = 168 )
Registered DIMM
Several additional circuits are on the module, including a Phase Lock Loop for timing alignments, a number of drivers that buffer the control, and address signals from the memory controller on the motherboard. ( Number of pins: DDR2 = 240, DDR = 184, SDR = 168 )
Small Outline DIMM (SO-DIMM)
An enhanced version of a standard DIMM. A 72-pin small outline DIMM is about half the length of a 72-pin SIMM.
(Number of pins: DDR / DDR2 = 200, SDR = 144)
Fully Buffered DIMM (FBDIMM)
For server applications where lots of DRAM components are required, a new solution complementing the registered DIMM modules for data rates of 533 Mbits/s and above becomes necessary. FBDIMM is a new memory interconnect technology standard for high-end memory connections. FBDIMM transitions the memory channel to a point-to-point interface, replaces the on-DIMM PLL, and registers with a memory buffer chip.
MicroDIMM
Small form factor SO-DIMMs. ( Number of pins: DDR2 = 214 )
Mini-DIMMs for DDR2
Small form factor registered DIMMs. ( Number of pins: DDR2 = 244 )
D E P E N D I N G O N T H E I R main application, the memory industry differentiates between Unbuffered DIMM, Registered DIMM, Fully Buffered DIMM (FBDIMM), Small Outline DIMM (SO-DIMM), MicroDIMM, and Mini-DIMM.
Typically used in Desktop PC systems Low-end servers Workstations High-end servers High-end workstations Space-constrained applications Laptops, mobile workstations ECC SO-DIMMs in networking applications (routers)
High-speed and high-density applications
High-end servers and workstations Sub-notebooks Mini PCs Blade servers Mobile workstations Routers ( Mini-ECC-DIMM ) T O D A Y T O M O R R O W
I n d u s t r i a l T r e n d s
A S A P R O V I D E R of a wide spectrum of memory components and storage modules, Infineon offers the pertinent products for density and speed-intensive applications from its wide range of modules. In addition there is a trend towards smaller sized modules – since applications are becoming more transportable and, thus, smaller as well.
Smaller-sized modules
SO-DIMMs
Module size required for notebooks MicroDIMMs
Small SO-DIMMs for sub-notebooks 1U Registered DIMMs
Reduced-height registered DIMMs for blade servers
Mini-DIMMs
Small registered DIMMs for blade servers, workstations, and routers
High-density modules
FBGA-based DIMMs as planar design, e.g. DDR2 2 GB registered / 1 GB SO-DIMM
Stacked-die FBGA technology for high-end applications,
e.g. DDR2 4 GB registered DIMM
High-speed modules
DDR: PC2700/3200
DDR2: PC2 3200/4200/5300 DDR2: Fully Buffered DIMM PC2 4200 and above
DDR2 MicroDIMM, 512 MB, 512 Mbit based, FBGA package
Bandwidth roadmap
P r o d u c t T r e n d s
20 10 8 6 4 2 1 0.8 0 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009Year of market introduction
Channel bandwidth [GBps] PC 100 PC 133 DDR200 DDR 266 DDR 333 DDR 400 DDR2 533 DDR2 667 DDR2/3 800 DDR3 1066 DDR3 1333 DDR3 1600
Single channel DIMM Expected I/O transition
1 0.8 0.6 0.4 0.2 0 Q1 /04 Q 2/04 Q3 /04 Q 4 /04 Q1 /05 Q 2/05 Q3 /05 Q 4 /05 DDR2 DDR SDRAM
(Source: Infineon Technologies)
DDR mainstream in 2004
Applications Modules Typical products
Desktops Unbuffered DIMMs DDR400 Servers, workstations Registered DIMMsECC unbuffered DIMMs DDR333 DDR400
Notebooks SO-DIMMs DDR400
DDR333
DDR mainstream in 2005
Applications Modules Typical products
Desktops Unbuffered DIMMs DDR2-533 Servers, workstations Registered DIMMs ECC unbuffered DIMMs DDR2-400DDR2-533
Notebooks SO-DIMMs DDR2-400/533 MicroDIMMs
D D R 2
T H E N E X T G E N E R A T I O N of synchronous DRAMs is called DDR2 and is a natural extension of the existing DDR standard. DDR2 has been introduced at operation frequencies of 200 MHz (DDR2-400) and will be extended to 266 MHz (DDR2-533), 333 MHz (DDR2-667) for main memory, and even 400 MHz (DDR2-800) for special applications. DRAM densities start at the 512 Mbit level as the main volume, followed by 256 Mbit and 1 Gbit for high-end server applications. This DRAM architecture change enables twice the bandwidth without increasing the demand on a new DRAM core while keeping power low. Key drivers for the technology switch to DDR2 are the demand for higher speeds and for DDR2 being an open standard. Infineon recently introduced the first DDR2 chips with 512 Mb capacity and is well positioned to supply the rapidly growing market with cost-efficient products based on a qualified 110 nm process.
DDR2 module, 2 GB, 512 Mbit based, FBGA package
Key benefits of DDR2 are
the higher bandwidths, lower power consumption, and
the better system margins at higher speeds in servers.
Power supply
F O L L O W I N G T H E I N D U S T R I A L trend the DDR2-DRAM supply voltage has been reduced from 2.5 V to 1.8 V for core and data in/outputs.
Power-Down
D D R 2 A D D S M O R E power-saving options. When no read or write access is in progress with a row open, the DRAM can be brought into Active Power-Down Mode. In addition to the standard Active Power-Down Mode, already available on DDR components, a new “Low Power Active Power-Down Mode” can be activated by the Mode Register for additional power savings.
ODT – On-Die Termination
O N D D R - B A S E D S Y S T E M S the termination of the signal lines is done externally on the motherboard. DDR2 offers the option of terminating signals in the DRAM itself, by adding one additional input pin to turn termination on or off. This feature drastically reduces wave reflections and enhances overall system margins. A “strong” or “weak” termination – depending on the application requirements – can be programmed within the Extended Mode Register.
Data strobes
D D R 2 O F F E R S T H E O P T I O N for differential data strobing to enhance signal margins. There is even the option to have different data strobes for reads and writes. All these new features can be selected by programming the Extended Mode Register during power-on.
Package
Unbuffered DIMM
Density
Infineon offers unbuffered modules with densities of 256 MB, 512 MB, 1 GB, and 2 GB.
Speed
The modules are available in the speeds PC2-3200 and PC2-4200, followed by PC2-5300.
Registered DIMM
Density
Infineon offers registered modules with densities of 256 MB, 512 MB, 1 GB, 2 GB, and 4 GB.
Speed
The standard modules are available in the speeds PC2-3200.
D D R 2
2004 2005 2 GB 1 GB 512 MB 256 MB 4 GB 2 GB 1 GB 512 MB 256 MB Registered DIMM FBD Registered DIMM FBD Registered DIMM FBD Registered DIMM FBD Density DensityDDR2 SO-DIMM, 1 Gbit, 512 Mbit based, FBGA package
Unbuffered DIMM Unbuffered DIMM
Unbuffered DIMM Unbuffered DIMM
SO-DIMM
Density
Infineon offers SO-DIMM modules with densities of 256 MB, 512 MB, 1 GB, and 2 GB.
Speed
The modules are available in the speeds PC2-3200, PC2-4200, and PC2-5300.
MicroDIMM
Density
Infineon plans to offer MicroDIMM modules with densities of 256 MB, 512 MB, and 1 GB.
Speed
The modules are available in the speeds PC2-3200 and PC2-4200.
More detailed information on www.infineon.com/memory
2004 2005
2004 2005
New Modules with DDR2
Mini-DIMMs for DDR2 (244-pin)
Small form factor registered DIMMs. Typically used in
Blade servers Mobile workstations Routers
Ultra-high density DIMMs for DDR2
Infineon plans to offer 4 GB registered DIMM as tall versions. Typically used in High-end server Storage applications 2 GB 1 GB 512 MB 256 MB Density 1 GB 512 MB 256 MB Density SO-DIMM SO-DIMM SO-DIMM SO-DIMM MicroDIMM MicroDIMM MicroDIMM
D D R
D D R S D R A M S (synchronous DRAMs) increase speed by reading data on both the rising edge and the falling edge of the clock pulse, essentially doubling the peak data bandwidth without increasing clock frequency. DDR’s low latencies and high bandwidth make it interesting for the customer.
T O M E E T T H E M A R K E T needs, Infineon offers a wide range of DDR DIMMs.
Key benefits
Compact structure High performance Low power consumption
Package
TSOP and FBGA packages are provided.
DDR module, 2 GB, 512 Mbit based, FBGA package DDR high-density DIMMs – 2 GB registered DIMM – 1 GB SO-DIMM DDR high-speed DIMMs – DDR400 available in unbuffered, registered, and SO-DIMM version FBGA package
– DDR333 registered DIMMs -1 GB – DDR333 SO-DIMMs -512 MB, -1 GB
Unbuffered DIMM
Density
Infineon offers unbuffered modules with densities of 128 MB, 256 MB, 512 MB, and 1 GB.
Speed
The modules are available in the speeds PC 2700 and PC 3200.
Registered DIMM
Density
Infineon offers registered modules with densities of 256 MB, 512 MB, 1 GB, and 2 GB.
Speed
The modules are available in the speeds PC 2100, PC 2700, and PC 3200.
SO-DIMM
Density
Infineon offers SO-DIMM modules with densities of 128 MB, 256 MB, 512 MB, and 1 GB.
Speed
The modules are available in the speeds PC 2700 and PC 3200.
2004 2005
2004 2005
More detailed information on www.infineon.com/memory
1 GB 512 MB 256 MB 128 MB Density 2004 2005 1 GB 512 MB 256 MB 128 MB Density 2 GB 1 GB 512 MB 256 MB 128 MB TSOP package FBGA package TSOP package FBGA package TSOP package FBGA package TSOP package FBGA package Density Unbuffered DIMM Unbuffered DIMM Unbuffered DIMM Unbuffered DIMM SO-DIMM SO-DIMM SO-DIMM SO-DIMM TSOP package
C h i p - S i z e P a c k a g e
F B G A B a s e d M o d u l e s
I N F I N E O N H A S D E V E L O P E D an inhouse technology for CSP. Its name is FBGA – BSP (Fine-pitch Ball Grid Array – Backside Protection) in BOC (Board on Chip) technology. Traditional wire bonding is used for the electrical connection. The BSP prevents a bare silicon backside which enables easier handling and better protection. The rigid substrate, together with BSP, allows package sizes to be clustered. As a result, die shrinks do not necessarily need a smaller package, and dies can be smaller than the ball-out – an important feature due to standardized ball-out.
C O M P A R E D T O T O D A Y ’ S T S O P package type, which is standard for SDR and DDR DRAMs, the new package type offers superior electrical and thermal performance, and also lower package volume and weight. The lower electrical parasitic values allow for faster memory speed which is a prerequisite for e.g. DDR2. Infineon’s inhouse FBGA technology fully supports DDR2 requirements. For SDRAM, DDR, and DDR2 Infineon uses chip-size packages to achieve high-density modules. In addition, the small form factor of the chip-size packages supports the miniaturization of handhelds.
DDR2
Roadmap packages:
FBGA
This technology is being applied to the following modules:
512 MB SDR SO-DIMMs 256 MB – 1 GB DDR
registered, reduced-height DIMMs 512 MB – 1 GB DDR SO-DIMMs All DDR2 modules
S t a c k e d D i e F B G A
H i g h P e r f o r m a n c e M e m o r y
T O A C H I E V E T H E H I G H E S T M E M O R Y density per module, Infineon has developed a dual-die FBGA. This technology provides two identical memory dies inside one FBGA. Technology and design guarantee high electrical and thermal performance of device and module, due to nearly identical characteristics of the interconnect technology for both chips. The resulting package height is less than 1.35 mm and fits all DIMM height standards. The package ballout (or pinout) is fully compatible to the standards defined in JEDEC. Thanks to Infineon’s small chip sizes, the dual-die chip-size package has a very competing footprint, just a bit wider than the regular single-die package.
I N S U M M A R Y , this innovative form of stacking provides unprecedented memory density per board area, and offers at the same time superior electrical and thermal properties of the resulting memory component.
Advantages
Same interconnect technology of upper and lower chip
Therefore both chips will have similar electrical parameters Package thickness of 1.35 mm max. fits to all DIMM height standards, covers even SO-DIMM
The following modules are built up on this technology:
2 GB DDR2 SO-DIMMs 4 GB DDR2 registered DIMMs
Schematic view of stacked die:
A E F G H J K L M N P R W VDD /RDQSNU/ VSS VSSQ /DQS VDDQ DQ6 VSSQ RDQSDM/ DQS VSSQ DQ7 VDDQ DQ1 VDDQ VDDQ DQ0 VDDQ DQ4 VSSQ DQ3 DQ2 VSSQ DQ5 VDDL VREF VSS VSSDL CK VDD
CKE0 /WE /RAS /CK ODT0
BA2 BA0 BA1 /CAS /CSo /CS1 CKE1 A10 A1 A2 A0 VDD VSS A3 A5 A6 A4 ODT1 A7 A9 A11 A8 VSS VDD NC NC NC NC NC NC NC NC
A12 A14 A15 A13
3 depop rows A B C D E F G H J K L 1 2 3 4 5 6 7 8 9 Ballout for 512 M Ballout for 1 G Ball pitch: 0.8 x 0.8 mm
DDR2 SD-FBGA ballout for 512 M / 1 G
Support balls
Common balls for both chips Chip select – chip 2
Chip select – chip 1
Upper chip Lower chip
Substrate
G R E E N M e m o r y P r o d u c t s
Playing a pioneering role in setting new standards
Eliminating lead in packages Reducing harmful substances Simplifying recycling
I N F I N E O N W A S O N E of the first semiconductor manufacturers in the world to announce the availability of “green” DRAM components. Infineon is currently pursuing a two-step strategy to introduce products with lower environmental impact. In step one, lead and halogens (components) and lead (PCBs) have been eliminated in 2003. In step two, halogens (PCBs) will also be substituted in 2005. Levels of other potentially hazardous chemical substances such as cadmium, hexavalent chrome, antimony oxide, etc., will also be dramatically reduced.
Components
T H E M A J O R I T Y O F I N F I N E O N memory components based on the 110 nm process are lead-free and halogen-free.
TSOP packaged DDR (256 M / 512 M) components FBGA packaged DDR available on request FBGA packaged DDR2 available
Modules
L E A D - F R E E M O D U L E S based on “green” 256 Mb DDR components are already available; DDR modules with higher-density components (512 M) will follow. DDR2 modules only with green available.
On our Internet websites: www.infineon.com/memory
C Datasheets
C Simulation models
C Memory Spectrum (PDF version)
C Brochures (PDF version)
More Detailed Information on Memory
Products is Available:
Edition 2004 June Published by
Infineon Technologies AG, St.-Martin-Straße 53, D-81669 München
© Infineon Technologies AG 2004. All Rights Reserved.
Please note
The information in this document is subject to change without notice. The information herein describes certain components and shall not be considered as a guarantee of characteristics.
Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information
For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide.
(www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office.
Infineon Technologies components may only be used in life-support devices or systems with the express written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life-support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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