N-Channel 30-V MOSFET

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N-Channel 30-V MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Available

• TrenchFET® Power MOSFETs • 100 % R_g Tested

PRODUCT SUMMARY

VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.)

30 0.0045 at VGS = 10 V 20 24 0.006 at V_GS= 4.5 V 17 S S D D D S G D SO-8 5 6 7 8 Top View 2 3 4 1

Ordering Information: Si4430BDY-T1-E3 (Lead (Pb)-free)

Si4430BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)

D

G

S N-Channel MOSFET

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted

Parameter Symbol 10 s Steady State Unit

Drain-Source Voltage V_DS 30

V

Gate-Source Voltage VGS ± 20

Continuous Drain Current (TJ = 150 °C)a

T_A = 25 °C

I_D 20 14

A

T_A = 70 °C 16 11

Pulsed Drain Current I_DM ± 60

Continuous Source Current (Diode Conduction)a IS 2.7 1.40

Avalanche Current

L = 0.1 mH IAS 40

Single Pulse Avalanche Energy E_AS 80 mJ

Maximum Power Dissipationa

T_A = 25 °C

P_D 3.0 1.6 W

T_A = 70 °C 2.0 1.0

Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient (MOSFET)a t ≤ 10 s RthJA

34 41

°C/W

Steady State 67 80

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Notes:

a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

MOSFET SPECIFICATIONS T_J = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Gate Threshold Voltage V_GS(th) V_DS= V_GS, I_D = 250 µA 1.0 3.0 V

Gate-Body Leakage I_GSS V_DS = 0 V, V_GS = ± 20 V ± 100 nA

Zero Gate Voltage Drain Current I_DSS VDS = 30 V, VGS = 0 V 1 µA

V_DS= 30 V, V_GS= 0 V, T_J= 70 °C 10

On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 40 A

Drain-Source On-State Resistancea RDS(on)

V_GS= 10 V, I_D= 20 A 0.0037 0.0045

Ω

V_GS= 4.5 V, I_D= 17 A 0.0048 0.006

Forward Transconductancea gfs VDS = 15 V, ID = 20 A 80 S

Diode Forward Voltagea VSD IS = 2.7 A, VGS = 0 V 0.72 1.1 V

Dynamicb

Total Gate Charge Q_g

V_DS = 15 V, V_GS= 4.5 V, I_D= 20 A 24 36 nC Gate-Source Charge Q_gs 10.5 Gate-Drain Charge Q_gd 7.5 Gate Resistance R_g 0.5 1.1 1.7 Ω

Turn-On Delay Time td(on)

V_DD = 15 V, R_L = 15 Ω I_D≅ 1 A, V_GEN = 10 V, R_g = 6 Ω

20 30

ns

Rise Time t_r 14 22

Turn-Off Delay Time t_d(off) 60 90

Fall Time t_f 18 30

Source-Drain Reverse Recovery Time t_rr IF = 2.7 A, dI/dt = 100 A/µs 35 50 Qrr 32 50 nC Output Characteristics 0 10 20 30 40 50 60 0 1 2 3 4 5 VGS = 10 V thru 4 V 3 V VDS - Drain-to-Source Voltage (V) - Dr

ain Current (A)

ID Transfer Characteristics 0 10 20 30 40 50 60 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 TC = 125 °C - 55 °C VGS - Gate-to-Source Voltage (V) - Dr

ain Current (A)

ID

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On-Resistance vs. Drain Current

Gate Charge

Source-Drain Diode Forward Voltage

0.000 0.002 0.004 0.006 0.008 0.010 0 10 20 30 40 50 60 VGS = 10 V - On-Resistance ( Ω ) RDS(on)

ID - Drain Current (A) VGS = 4.5 V 0 1 2 3 4 5 6 0 5 10 15 20 25 30 35 VDS = 15 V ID = 20 A - Gate-to-Source Voltage (V)

Qg - Total Gate Charge (nC) VGS 1.0 1.2 1 10 60 0.00 0.2 0.4 0.6 0.8 TJ = 25 °C TJ = 150 °C VSD - Source-to-Drain Voltage (V)

- Source Current (A)

IS

Capacitance

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

0 500 1000 1500 2000 2500 3000 3500 4000 0 5 10 15 20 25 30 Crss VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) Coss Ciss 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 VGS = 10 V ID = 20 A TJ - Junction Temperature (°C) RDS(on) On-Resistance (Nor maliz ed) 0.000 0.005 0.010 0.015 0.020 0.025 0 2 4 6 8 10 ID = 20 A - On-Resistance ( RDS(on) Ω ) VGS - Gate-to-Source Voltage (V)

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Threshold Voltage - 0.8 - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA V a riance (V) VGS(th) TJ - Temperature (°C)

Single Pulse Power

0.001 0 1 200 80 120 10 0.01 Time (s) 40 160 P o w er (W) 0.1

Safe Operating Area

100 1 0.1 1 10 100 0.01 10 TC = 25 °C Single Pulse - Dr

ain Current (A)

ID 0.1 10 ms 100 ms 1 s 10 s DC VDS - Drain-to-Source Voltage (V) * VGS minimum VGS at which RDS(on) isspecified

1 ms

> Limited by R DS (on)*

Normalized Thermal Transient Impedance, Junction-to-Ambient

10-3 ₁₀-2 ₁₀-1 ₁ ₁₀ ₆₀₀ 10-4 ₁₀₀ 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5

Square Wave Pulse Duration (s)

Nor maliz ed Ef fectiv e T ransient Ther mal Impedance 1. Duty Cycle, D =

2. Per Unit Base = RthJA = 67 °C/W

3. TJM- TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM

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Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73184.

Normalized Thermal Transient Impedance, Junction-to-Foot

10-3 ₁₀-2 ₁₀-1 ₁ ₁₀ 10-4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5

Square Wave Pulse Duration (s)

Nor maliz ed Ef fecti v e T ransient Ther mal Impedance

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DIM

MILLIMETERS INCHES

Min Max Min Max

A 1.35 1.75 0.053 0.069 A₁ 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 0.157 e 1.27 BSC 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026

ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 4 3 1 2 5 6 8 7 H E h x 45 C All Leads q 0.101 mm 0.004" L B A1 A e D 0.25 mm (Gage Plane)

S

OIC (NARROW): 8-LEAD

JEDEC Part Number: MS-012

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Vishay Siliconix

APPL

ICATION NOTE

RECOMMENDED MINIMUM PADS FOR SO-8

0.246 _(6.248)

Recommended Minimum Pads Dimensions in Inches/(mm) 0.172 (4.369) 0.152 _(3.861) 0.047 _(1.194) 0.028 (0.711) 0.050 (1.270) 0.022 (0.559) Return to Index Return to Index

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Vishay

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