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Optical Design Of Dilute Nitride Quantum Wells Vertical Cavity Semiconductor Optical Amplifiers For Communication Systems

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Figure

Fig. 1.  Schematic of the band structure of GaInNAs, using the BAC model. The splitting of the conduction band into E- and E+ bands is clearly shown (Aissat, et al
Fig. 2. Distributed Bragg Reflector illustrates: (a) the reflective index versus different Al concentration for AlxGa1-xAs mirrors, and (b) the influence of the refractive index contrast ratio
Fig. 3. The lasing threshold lines, in which the amplifier needs to operate at
Fig. 7.   Amplifier bandwidth in reflection mode versus peak reflection gain for 0.997 (24-Pairs bottom mirror) and top mirror’s reflectivity for different numbers of pairs

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