CYStek Electronics Corp.

(1)

MTP2301S3 CYStek Product Specification

P-Channel Enhancement Mode MOSFET

MTP2301S3

Features

• Advanced trench process technology

• High density cell design for ultra low on resistance

• Excellent thermal and electrical capabilities

• Compact and low profile SOT-323 package

Equivalent Circuit

Outline

Ordering Information

Device

Package

Shipping

MTP2301S3-0-T1-G

_{(Pb-free lead plating and halogen-free package)}

SOT-323

3000 pcs / Tape & Reel

SOT-323

MTP2301S3

Packing spec, T1 : 3000 pcs / tape & reel,7” reel

Product rank, zero for no rank products

BV

DSS

-20V

I

D

@V

GS

=10V, T

A

=25°C

-1.6A

R

DS(ON)

@V

GS

=-4.5V, I

D

=-1.6A

85mΩ

R

DS(ON)

@V

GS

=-2.5V, I

D

=-1A

105mΩ

Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and

green compound products

Product name

D

G

(2)

Absolute Maximum Ratings

(T

A

=25

C)

Parameter

Symbol

Limits

Unit

Drain-Source Voltage

V

DS

-20

V

Gate-Source Voltage

V

GS

±8

Continuous Drain Current @ V

GS

=10V, T

A

=25C

*a

I

D

-1.6

A

Continuous Drain Current @ V

GS

=10V, T

A

=70C

*a

-1.3

Pulsed Drain Current

*b

I

DM

-10

Continuous Body Diode Forward Current @ T

A

=25C

*a

I

S

-1.6

Avalanche Current @ L=0.1mH

I

AS

-9

Avalanche Energy @ L=0.5mH

E

AS

6.3 mJ

Total Power Dissipation

T

A

=25C

*a

P

D

340 mW

T

A

=70C

*a

218 Operating Junction and Storage Temperature Range

T

J

,

T

stg

-55~+150

C

Thermal Data

Parameter

Symbol Steady State Unit

Thermal Resistance, Junction-to-ambient

*a

R

θJA

367 C/W

Note:

*a. The value of R

θJA

is measured with the device mounted on 1 in² FR-4 board with 2 oz. copper, in a still air environment

with T

A

=25°C. The power dissipation P

D

is based on R

θJA

and the maximum allowed junction temperature of 150°C. The

value in any given application depends on the user’s specific board design.

*b. Repetitive rating, pulse width limited by junction temperature T

J(MAX)

=150°C. Ratings are based on low frequency and

(3)

Characteristics (

T

A

=25

C, unless otherwise specified

)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

BV

DSS

-20

-

V

GS

=0V, I

D

=-250μA

V

GS(th)

-0.45

-

-1

V

DS

=V

GS

, I

D

=-250μA

G

FS

-

5.5 -

S

V

DS

=-5V, I

D

=-1.6A

I

GSS

-

±100

nA

V

GS

=±8V, V

DS

=0V

I

DSS

-

-1

μA

V

DS

=-16V, V

GS

=0V

R

DS(ON)

-

85

110 mΩ

V

GS

=-4.5V, I

D

=-1.6A

-

105

150 V

GS

=-2.5V, I

D

=-1A

Dynamic

Ciss

-

600 -

pF

V

DS

=-10V, V

GS

=0V, f=1MHz

Coss

-

60 -

Crss

-

52 -

Rg

-

14 -

Ω

f=1MHz

Qg

*1, 2

-

8 -

nC

_V

DS

=-10V, I

D

=-1.6A, V

GS

=-4.5V

Qgs

*1, 2

-

1 -

Qgd

*1, 2

-

1.7 -

t

d(ON) *1, 2

-

4 -

ns

V

DS

=-10V, I

D

=-1A, V

GS

=-4.5V, R

GS

=3.3Ω

tr

*1, 2

-

20 -

t

d(OFF)

*1, 2

-

50 -

t

f *1, 2

-

5.2 -

Source-Drain Diode

V

SD *1

-

-0.85

-1.2

V

I

S

=-1.6A, V

GS

=0V

trr

-

6 -

ns

I

F

=-1.6A, dI

F

/dt=100A/μs

Qrr

-

1.7 -

nC

Note:

*1. Pulse Test : Pulse Width



300μs, Duty Cycle



2%

(4)

Typical Characteristics

0 2 4 6 8 10 0 1 2 3 4 5 -I D , D rai n Cu rren t (A ) -VDS, Drain-Source Voltage(V)

Typical Output Characteristics

VGS=-10V,-9V,-8V,-7V, -6V,-5V,-4V,-3V,2.5V VGS=-2V VGS=-1.5V 0.8 0.9 1 1.1 1.2 -75 -50 -25 0 25 50 75 100 125 150 175 -BV DSS , N ormal ized D rai n-So urce Break do w n V ol tag e TJ, Junction Temperature(°C)

Breakdown Voltage vs Ambient Temperature

ID=-250μA VGS=0V 0 40 80 120 160 0 1 2 3 4 5 R D S( on ) , St at ic D rai n-So urce O n-St at e Res is tan ce(mΩ) -ID, Drain Current(A)

Static Drain-Source On-State resistance vs Drain Current

VGS=-4.5V VGS=-2.5V 0.2 0.4 0.6 0.8 1 1.2 1.4 0 1 2 3 4 5 -V SD , So ur ce -Dr ai n Vol ta ge (V)

-IS, Body Diode Current(A)

Body Diode Current vs Source-Drain Voltage

TJ=25°C TJ=150°C 50 100 150 200 250 300 350 400 0 1 2 3 4 5 R DS( ON ) , St at ic Dr ai n-So ur ce On -St at e Re si st an ce (mΩ) -VGS, Gate-Source Voltage(V)

Static Drain-Source On-State Resistance vs Gate-Source Voltage ID=-1.6A 0 0.5 1 1.5 2 -75 -50 -25 0 25 50 75 100 125 150 175 R DS( ON ) , Nor mal iz ed St at ic Dr ai n-So ur ce On -St at e Re si st an ce TJ, Junction Temperature(°C)

Drain-Source On-State Resistance vs Junction Temperature

VGS=-4.5V, ID=-1.6A

(5)

Typical Characteristics (Cont.)

10 100 1000 0 5 10 15 20 Ca pa ci ta nc e( pF) -VDS, Drain-Source Voltage(V)

Capacitance vs Drain-to-Source Voltage

Coss Ciss Crss 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 -V GS( th ) ,Nor mal iz ed Th re sh ol d Vol ta ge TJ, Junction Temperature(°C) Threshold Voltage vs Junction Temperature

ID=-250μA ID=-1mA 0.01 0.1 1 10 0.001 0.01 0.1 1 10 G FS , Fo rw ard Tr an sfe r A dm itta nc e (S) -ID, Drain Current(A)

Forward Transfer Admittance vs Drain Current

VDS=-5V TA=25°C Pulsed 0 1.5 3 4.5 0 2 4 6 8 10 -V GS , Ga te -So ur ce Vo lta ge (V )

Qg, Total Gate Charge(nC) Gate Charge Characteristics

VDS=-10V ID=-1.6A 0.01 0.1 1 10 100 0.01 0.1 1 10 100 -I D , Dr ai n Cu rr en t (A) -VDS, Drain-Source Voltage(V)

Maximum Safe Operating Area

DC 10ms 100ms 1ms 100μs TA=25°C, TJ=150°C, VGS=-4.5V, RθJA=367°C/W Single Pulse RDS(ON) Limited 0 0.4 0.8 1.2 1.6 2 25 50 75 100 125 150 175 -I D , M ax imum Dr ai n Cu rr en t( A) TJ, Junction Temperature(°C) Maximum Drain Current vs JunctionTemperature

(6)

Typical Characteristics (Cont.)

0 1 2 3 4 5 6 7 8 9 10 0.001 0.01 0.1 1 10 100 Po w er (W ) Pulse Width(s)

Single Pulse Power Rating, Junction to Ambient

TJ(MAX)=150°C TA=25°C RθJA=367°C/W 0.01 0.1 1

1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02

r(t ), N orm al ized T ran si en t T herm al Res is tan ce

t1, Square Wave Pulse Duration(s)

Transient Thermal Response Curves

(7)

Reel Dimension

Carrier Tape Dimension

(8)

Recommended wave soldering condition

Product

Peak Temperature

Soldering Time

Pb-free devices

260 +0/-5 C

5 +1/-1 seconds

Recommended wave soldering condition

Profile feature

Sn-Pb eutectic Assembly

Pb-free Assembly

Average ramp-up rate

(Tsmax to Tp)

3C/second max.

Preheat

−Temperature Min(T

S

min)

−Temperature Max(T

S

max)

−Time(ts

min

to ts

max

)

100C

150C

60-120 seconds

150C

200C

60-180 seconds

Time maintained above:

−Temperature (T

L

)

− Time (t

L

)

183C

60-150 seconds

217C

60-150 seconds

Peak Temperature(T

P

)

240 +0/-5 C

260 +0/-5 C

Time within 5C of actual peak

temperature(tp)

10-30 seconds

20-40 seconds

Ramp down rate

6C/second max.

Time 25 C to peak temperature

6 minutes max.

8 minutes max.

(9)

SOT-323 Dimension

DIM

Inches

Millimeters

DIM

Inches

Millimeters

Min.

Max.

Min.

Max.

Min.

Max.

Min.

Max.

A

0.0315 0.0433

0.80

1.10 e1

0.0256

-

0.65 -

A1

0.0000 0.0039

0.00

0.10 He

0.0787 0.0886

2.00

2.25 bp

0.0118 0.0157

0.30

0.40 Lp

0.0059 0.0177

0.15

0.45 C

0.0039 0.0098

0.10

0.25 Q

0.0051 0.0091

0.13

0.23 D

0.0709 0.0866

1.80

2.20 v

0.0079

-

0.2 -

E

0.0453 0.0531

1.15

1.35 w

0.0079

-

0.2 -

e

0.0512

-

1.3 -



-

10

0

Notes:

1.Controlling dimension: millimeters.

2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.

Material:

• Lead: Pure tin plated

• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0

Important Notice:

• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice.

• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.