CYStek Electronics Corp.

(1)

MTNN080603RSV8A CYStek Product Specification

30V Dual Asymmetric N-Channel Enhancement Mode MOSFET

MTNN080603RSV8A

Features

• High Current Capability

• Low On Resistance

• Fast Switching Characteristic

• Low Gate Charge

• RoHS compliant package

Equivalent Circuit

Outline

Ordering Information

Device

Package

Shipping

MTNN080603RSV8A-0-T6-G

_{(Pb-free lead plating and halogen-free package)}

DFN3×3

3000 pcs / Tape & Reel

DFN3×3

MTNN080603RSV8A

Packing spec, T6 : 3000 pcs / tape & reel,13” reel

Product rank, zero for no rank products

Q1

Q2

BV

DSS

30V

I

D

@V

GS

=10V, T

C

=25°C

(silicon limit)

38A

44A

I

D

@V

GS

=10V, T

C

=25°C

(package limit)

20A

30A

I

D

@V

GS

=10V, T

A

=25°C

8.6A

10A

R

DS(ON)

@V

GS

=10V

7.3mΩ

5mΩ

R

DS(ON)

@V

GS

=4.5V

11.5mΩ

7.5mΩ

Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and

green compound products

(2)

Absolute Maximum Ratings

(T

A

=25

C)

Parameter

Symbol

Limits

Unit

Q1

Q2

Drain-Source Voltage

V

DS

30

30 V

Gate-Source Voltage

V

GS

±20

Continuous Drain Current @ V

GS

=10V, T

C

=25C

(silicon limit) *a

I

D

38

44 A

Continuous Drain Current @ V

GS

=10V, T

C

=25C

(package limit) *a

20

30 Continuous Drain Current @ V

GS

=10V, T

C

=100C

*a

24

28 Continuous Drain Current @ V

GS

=10V, T

A

=25C

*b

8.6

10 Continuous Drain Current @ V

GS

=10V, T

A

=70C

*b

6.9

8 Pulsed Drain Current

*c

I

DM

80

120 Continuous Body Diode Forward Current @ T

C

=25C

*a

I

S

20

20 Avalanche Current @ L=0.1mH

I

AS

13

15 Avalanche Energy @ L=0.5mH

E

AS

12

16 mJ

Total Power

Dissipation

T

C

=25C

*a

P

D

23

25 W

T

C

=100C

*a

9.2

10 T

A

=25C

*b

1.1

1.2 T

A

=70C

*b

0.7

0.8 Operating Junction and Storage Temperature Range

T

J

, T

stg

-55~+150

C

Thermal Data

Parameter

Symbol

Steady State

Unit

Thermal Resistance, Junction-to-case

R

θJC

5.4

5 C/W

Thermal Resistance, Junction-to-ambient

*b

R

θJA

110

100 Note:

*a. The power dissipation P

D

is based on T

J(MAX)

=150°C, using junction-to-case thermal resistance, and is more useful in

setting the upper dissipation limit for cases where additional heatsinking is used.

*b. The value of R

θJA

is measured with the device mounted on 1 in² FR-4 board with 2 oz. copper, in a still air environment

with T

A

=25°C. The power dissipation P

D

is based on R

θJA

and the maximum allowed junction temperature of 150°C. The

value in any given application depends on the user’s specific board design.

*c. Repetitive rating, pulse width limited by junction temperature T

J(MAX)

=150°C. Ratings are based on low frequency and

(3)

Q1 Electrical Characteristics (

T

A

=25

C, unless otherwise specified

)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

BV

DSS

30 -

-

V

GS

=0V, I

D

=250μA

V

GS(th)

1 -

2.5 V

DS

=V

GS

, I

D

=250μA

G

FS

-

10.2 -

S

V

DS

=5V, I

D

=10A

I

GSS

-

±100

nA

V

GS

=±20V, V

DS

=0V

I

DSS

-

1 μA

V

DS

=24V, V

GS

=0V

R

DS(ON)

-

7.3

9.5 mΩ

V

GS

=10V, I

D

=12A

-

11.5

16 V

GS

=4.5V, I

D

=9A

Dynamic

Ciss

-

570 -

pF

V

DS

=15V, V

GS

=0V, f=1MHz

Coss

-

410 -

Crss

-

55 -

Rg

-

0.6 -

Ω

f=1MHz

Qg

*1, 2

-

11 -

nC

_V

DS

=15V, I

D

=12A, V

GS

=10V

Qgs

*1, 2

-

2 -

Qgd

*1, 2

-

2.2 -

t

d(ON) *1, 2

-

7 -

ns

V

DS

=15V, I

D

=12A, V

GS

=10V, R

GS

=1Ω

tr

*1, 2

-

13 -

t

d(OFF)*1, 2

-

20 -

t

f *1, 2

-

5.4 -

Source-Drain Diode

V

SD *1

-

0.85

1.2 V

I

S

=10A, V

GS

=0V

trr

-

16 -

ns

I

F

=10A, dI

F

/dt=100A/μs

Qrr

-

5.2 -

nC

Note:

*1. Pulse Test : Pulse Width



300μs, Duty Cycle



2%

(4)

Q2 Electrical Characteristics (

T

A

=25

C, unless otherwise specified

)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

BV

DSS

30 -

-

V

GS

=0V, I

D

=250μA

V

GS(th)

1 -

2.5 V

DS

=V

GS

, I

D

=250μA

G

FS

-

11.2 -

S

V

DS

=5V, I

D

=10A

I

GSS

-

±100

nA

V

GS

=±20V, V

DS

=0V

I

DSS

-

1 μA

V

DS

=24V, V

GS

=0V

R

DS(ON)

-

5

6.5 mΩ

V

GS

=10V, I

D

=15A

-

7.5

10.5 V

GS

=4.5V, I

D

=10A

Dynamic

Ciss

-

750 -

pF

V

DS

=15V, V

GS

=0V, f=1MHz

Coss

-

520 -

Crss

-

65 -

Rg

-

0.7 -

Ω

f=1MHz

Qg

*1, 2

-

14 -

nC

_V

DS

=15V, I

D

=15A, V

GS

=10V

Qgs

*1, 2

-

3 -

Qgd

*1, 2

-

3 -

t

d(ON) *1, 2

-

9 -

ns

V

DS

=15V, I

D

=15A, V

GS

=10V, R

GS

=1Ω

tr

*1, 2

-

12.5 -

t

d(OFF)*1, 2

-

24 -

t

f *1, 2

-

6 -

Source-Drain Diode

V

SD *1

-

0.85

1.2 V

I

S

=10A, V

GS

=0V

trr

-

19 -

ns

I

F

=10A, dI

F

/dt=100A/μs

Qrr

-

7 -

nC

Note:

*1. Pulse Test : Pulse Width



300μs, Duty Cycle



2%

(5)

Typical Characteristics : Q1( N-channel )

0 10 20 30 40 50 0 1 2 3 4 5 6 7 8 9 10 I D , Dr ai n Cu rr en t( A) VDS, Drain-Source Voltage(V)

Typical Output Characteristics

VGS=3V 3.5V 10V, 9V, 8V, 7V, 6V, 5V, 4.5V,4V 0.8 0.9 1 1.1 1.2 -75 -50 -25 0 25 50 75 100 125 150 175 BV DSS , N ormal ized D rai n-So urce Break do w n V ol tag e TJ, Junction Temperature(°C) Brekdown Voltage vs Ambient Temperature

ID=250μA VGS=0V 0 3 6 9 12 15 0 4 8 12 16 20 R DS (ON) , S ta tic D ra in -So urc e O n-Sta te Re sista nc e(m Ω) ID, Drain Current(A)

Static Drain-Source On-State resistance vs Drain Current

VGS=10V VGS=4.5V 0.2 0.4 0.6 0.8 1 1.2 0 2 4 6 8 10 12 14 16 18 20 V SD , So urc e-D ra in V olta ge (V )

IS, Body Diode Current(A) Body Diode Current vs Source-Drain Voltage

TJ=25°C TJ=150°C 0 10 20 30 40 50 0 2 4 6 8 10 R D S (O N ) , St at ic Dr ai n-So ur ce On -St at e Re si st an ce (m Ω ) VGS, Gate-Source Voltage(V)

Static Drain-Source On-State Resistance vs Gate-Source Voltage ID=12A 0 0.5 1 1.5 2 2.5 -75 -50 -25 0 25 50 75 100 125 150 175 R D S (O N ) , Nor mal iz ed St at ic Dr ai n-So ur ce On -St at e Re si st an ce TJ, Junction Temperature(°C)

Drain-Source On-State Resistance vs Junction Tempearture

VGS=10V, ID=12A

(6)

Typical Characteristics (Cont.) : Q1( N-channel)

0 200 400 600 800 1000 0 5 10 15 20 25 30 Ca pa ci ta nc e( pF) VDS, Drain-Source Voltage(V) Capacitance vs Drain-to-Source Voltage

Coss Ciss Crss 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 V G S (t h) , Nor mal iz ed Th re sh ol d Vol ta ge TJ, Junction Temperature(°C) Threshold Voltage vs Junction Tempearture

ID=250μA ID=1mA 0.1 1 10 100 0.01 0.1 1 10 G FS , Fo rwar d Tr an sf er Admi tt an ce (S) ID, Drain Current(A)

Forward Transfer Admittance vs Drain Current

VDS=5V TA=25°C Pulsed 0 2 4 6 8 10 0 2 4 6 8 10 12 V GS , Gat e-So ur ce Vol ta ge (V)

Qg, Total Gate Charge(nC)

Gate Charge Characteristics

VDS=15V ID=12A 0.01 0.1 1 10 100 0.01 0.1 1 10 100 I D , Dr ai n Cu rr en t( A) VDS, Drain-Source Voltage(V)

Maximum Safe Operating Area

DC 10ms 1ms 100μs RDS(ON) Limited TA=25°C, TJ=150°C, VGS=10V RθJA=110°C/W, Single Pulse

100ms 1s 10s 0 1 2 3 4 5 6 7 8 9 10 25 50 75 100 125 150 175 I D , M ax imum Dr ai n Cu rr en t( A) TJ, Junction Temperature(°C)

Maximum Drain Current vs JunctionTemperature

(7)

Typical Characteristics (Cont.) : Q1( N-channel)

0 50 100 150 200 250 300 0.0001 0.001 0.01 0.1 1 10 100 Po we r (W) Pulse Width(s)

Single Pulse Power Rating, Junction to Ambient

TJ(MAX)=150°C TA=25°C RθJA=110°C/W 0 5 10 15 20 25 30 35 40 45 25 50 75 100 125 150 175 I D , M ax imum Dr ai n Cu rr en t( A) TC, Case Temperature(°C)

Maximum Drain Current vs Case Temperature

VGS=10V, RθJC=5.4°C/W Silicon Limit Package Limit 0.001 0.01 0.1 1

1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

r(t ), N ormal ized E ffect iv eT ran si en t T hermal Res is tan ce

t1, Square Wave Pulse Duration(s) Transient Thermal Response Curves

Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=110°C/W

(8)

Typical Characteristics : Q2( N-channel)

0 10 20 30 40 50 0 1 2 3 4 5 6 7 8 9 10 I D , Dr ai n Cu rr en t (A) VDS, Drain-Source Voltage(V)

Typical Output Characteristics

10V, 9V, 8V, 7V, 6V, 5V, 4.5V, 4V VGS=3V 3.5V 0.8 0.9 1 1.1 1.2 -75 -50 -25 0 25 50 75 100 125 150 175 BV DSS , N ormal ized D rai n-So urce Break do w n V ol tag e TJ, Junction Temperature(°C)

Brekdown Voltage vs Ambient Temperature

ID=250μA VGS=0V 0 2.5 5 7.5 10 0 4 8 12 16 20 R D S (o n) , St at ic Dr ai n-So ur ce On -St at e Re si st an ce (m Ω ) ID, Drain Current(A)

Static Drain-Source On-State resistance vs Drain Current

VGS=4.5V VGS=10V 0.2 0.4 0.6 0.8 1 1.2 0 4 8 12 16 20 V SD , So ur ce -D ra in V olta ge (V )

IS, Body Diode Current(A)

Body Diode Current vs Source-Drain Voltage

TJ=25°C TJ=150°C 0 10 20 30 40 50 0 2 4 6 8 10 R D S(o n) , Sta tic D ra in -So urc e O n-Sta te Re sista nc e(m Ω) VGS, Gate-Source Voltage(V)

Static Drain-Source On-State Resistance vs Gate-Source Voltage ID=15A 0 0.5 1 1.5 2 2.5 -75 -50 -25 0 25 50 75 100 125 150 175 R D S(o n) , N orma liz ed Sta tic D ra in -So urc e O n-Sta te R es is ta nc e TJ, Junction Temperature(°C)

Drain-Source On-State Resistance vs Junction Tempearture

VGS=10V, ID=15A

(9)

Typical Characteristics (Cont.) : Q2(N-channel)

0 200 400 600 800 1000 1200 0 5 10 15 20 25 30 Ca pa ci ta nc e( pF) VDS, Drain-Source Voltage(V)

Capacitance vs Drain-to-Source Voltage

Coss Ciss Crss 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 V GS( th ) , Nor mal iz ed Th re sh ol d Vol ta ge TJ, Junction Temperature(°C) Threshold Voltage vs Junction Tempearture

ID=250μA ID=1mA 0.1 1 10 100 0.01 0.1 1 10 G FS , Fo rwar d Tr an sf er Admi tt an ce (S) ID, Drain Current(A)

Forward Transfer Admittance vs Drain Current

VDS=5V TA=25°C Pulsed 0 2 4 6 8 10 0 2 4 6 8 10 12 14 16 V GS , Gat e-So ur ce Vol ta ge (V)

Qg, Total Gate Charge(nC) Gate Charge Characteristics

VDS=15V ID=15A 0.01 0.1 1 10 100 0.01 0.1 1 10 100 I D , Dr ai n Cu rr en t( A) VDS, Drain-Source Voltage(V)

Maximum Safe Operating Area

DC

10ms 100ms 100μs

TA=25°C, TJ=150°C, VGS=10V RθJA=100°C/W, Single Pulse

1ms RDS(ON) Limited 1s 10s 0 2 4 6 8 10 12 25 50 75 100 125 150 175 I D , M ax imum Dr ai n Cu rr en t( A) TJ, Junction Temperature(°C)

Maximum Drain Current vs Junction Temperature

(10)

Typical Characteristics (Cont.) : Q2(P-channel)

Recommended Soldering Footprint

Unit：mm

0 50 100 150 200 250 300 0.0001 0.001 0.01 0.1 1 10 100 Po we r (W) Pulse Width(s)

Single Pulse Power Rating, Junction to Ambient

TJ(MAX)=150°C TA=25°C RθJA=100°C/W 0 10 20 30 40 50 60 25 50 75 100 125 150 175 I D , M ax imum Dr ai n Cu rr en t( A) TC, Case Temperature(°C)

Maximum Drain Current vs Case Temperature

VGS=10V,RθJC=5°C/W Silicon Limit Package Limit 0.001 0.01 0.1 1

1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

r(t ), N ormal ized E ffect iv e T ran si en t T hermal Res is tan ce

t1, Square Wave Pulse Duration(s) Transient Thermal Response Curves

Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=100°C/W

(11)

Reel Dimension

Carrier Tape Dimension

Unit：mm

Pin 1 Direction of unreeling 0 806 0 3 RS

(12)

Recommended wave soldering condition

Product

Peak Temperature

Soldering Time

Pb-free devices

260 +0/-5 C

5 +1/-1 seconds

Recommended temperature profile for IR reflow

Profile feature

Sn-Pb eutectic Assembly

Pb-free Assembly

Average ramp-up rate

(Tsmax to Tp)

3C/second max.

Preheat

−Temperature Min(T

S

min)

−Temperature Max(T

S

max)

−Time(ts

min

to ts

max

)

100C

150C

60-120 seconds

150C

200C

60-180 seconds

Time maintained above:

−Temperature (T

L

)

− Time (t

L

)

183C

60-150 seconds

217C

60-150 seconds

Peak Temperature(T

P

)

240 +0/-5 C

260 +0/-5 C

Time within 5C of actual peak

temperature(tp)

10-30 seconds

20-40 seconds

Ramp down rate

6C/second max.

Time 25 C to peak temperature

6 minutes max.

8 minutes max.

(13)

DFN3×3 Dimension

DIM

Millimeters

Inches

DIM

Millimeters

Inches

Min.

Max.

Min.

Max.

Min.

Max.

Min.

Max.

A

0.70

0.80

0.028

0.032 E

2.90

3.10

0.114

0.122 A1

0.00

0.05

0.000

0.002 E1

2.20

2.40

0.087

0.094 b

0.35

0.45

0.014

0.018 E2

2.20

2.45

0.087

0.096 c

0.20 REF

0.008 REF

e

0.55

0.75

0.008

0.030 D

2.90

3.10

0.114

0.122 K

0.15

0.35

0.006

0.014 D1

0.40

0.60

0.016

0.024 K1

0.25

0.45

0.010

0.018 D2

0.85

1.05

0.033

0.041 L

0.27

0.40

0.011

0.016 Notes:

1.Controlling dimension: millimeters.

2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.

Material:

• Lead: pure tin plated.

• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.

Important Notice:

• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice.

• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

Marking:

8-Lead DFN3×3 Plastic Package

CYStek Package Code: V8

Date Code Assembly site code: blank→site 1 G→site 2

Date Code(counting from left to right) :

1st_{code: year code, the last digit of Christian year}

2nd_{code : month code, Jan→A, Feb→B, Mar→C, Apr→D}

May→E, Jun→F, Jul→G, Aug→H, Sep→J, Oct→K, Nov→L, Dec→M

3rd_{and 4}th_{codes : production serial number, 01~99}

Note : 1.All dimensions are in mm.

2.Dimensions are not inclusive burrs and mold flash.

G1 D1 D1 D1