Type Marking Pin Configuration Package BCX41 EKs 1 = B 2 = E 3 = C SOT23. Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage V CEO

1

2

3

NPN Silicon AF and Switching Transistor

• For general AF applications • High breakdown voltage

• Low collector-emitter saturation voltage • Complementary type: BCX42 (PNP) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

Type Marking Pin Configuration Package

BCX41 EKs 1 = B 2 = E 3 = C SOT23

Maximum Ratings

Parameter Symbol Value Unit

Collector-emitter voltage V_CEO 125 V

Collector-base voltage V_CBO 125

Emitter-base voltage V_EBO 5

Collector current I_C 800 mA

Peak collector current, t_p≤ 10 ms I_CM 1 A

Base current I_B 100 mA

Peak base current I_BM 200

Total power dissipation

T_S ≤ 79 °C

P_tot 330 mW

Junction temperature T_j 150 °C

Storage temperature T_stg -65 ... 150

Thermal Resistance

Parameter Symbol Value Unit

Junction - soldering point1) _{RthJS ≤ 215 K/W}

Electrical Characteristics at T_A = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

I_C = 10 mA, I_B = 0

V_(BR)CEO 125 - - V

Collector-base breakdown voltage

I_C = 100 µA, I_E = 0

V_(BR)CBO 125 -

-Emitter-base breakdown voltage

I_E = 10 µA, I_C = 0

V_(BR)EBO 5 -

-Collector-base cutoff current

V_CB = 100 V, I_E = 0 V_CB = 100 V, I_E = 0 , T_A = 150 °C I_CBO -0.1 20 µA

Collector-emitter cutoff current

V_CE = 100 V, T_A = 85 °C V_CE = 100 V, T_A = 125 °C I_CEO -10 75 Emitter-base cutoff current

V_EB = 4 V, I_C = 0 I_EBO - - 100 nA DC current gain1) I_C = 100 µA, V_CE = 1 V I_C = 100 mA, V_CE = 1 V I_C = 200 mA, V_CE = 1 V h_FE 25 63 40

-Collector-emitter saturation voltage1)

I_C = 300 mA, I_B = 30 mA

V_CEsat - - 0.9 V

Base emitter saturation voltage1)

I_C = 300 mA, I_B = 30 mA V_BEsat - - 1.4 AC Characteristics Transition frequency I_C = 20 mA, V_CE = 5 V, f = 20 MHz f_T - 100 - MHz Collector-base capacitance V_CB = 10 V, f = 1 MHz C_cb - 12 - pF 1_{Pulse test: t < 300µs; D < 2%}

DC current gain h_FE = ƒ(IC) V_CE = 1 V 10 10 10 10 BCX 41/BSS 64 EHP00427 h mA -1 0 2 3 FE 3 10 102 1 10 5 5 1 10 150 25 -50 5 5 5 C Ι ˚C ˚C ˚C

Collector-emitter saturation voltage

I_C = _ƒ(VCEsat), h_FE = 10 0 400 800 BCX 41/BSS 64 EHP00425 V_{CE sat} mV mA 103 0 10 10 101 10 102 10 5 5 5 10 200 600 150 25 -50 -1 C Ι ˚C ˚C ˚C

Base-emitter saturation voltage

I_C = _ƒ(VBEsat), h_FE = 10 BCX 41/BSS 64 EHP00424 10 mA 10 10 10 3 2 1 0 5 5 5 150 25 -50 C Ι ˚C ˚C ˚C Collector current I_C = ƒ(VBE) V_CE = 1V BCX 41/BSS 64 EHP00421 10 mA 10 10 10 3 2 1 0 5 5 5 150 25 -50 T_A= C Ι ˚C ˚C ˚C

Collector cutoff current I_CBO = ƒ(TA) V_CBO = 80 V 10 0 50 100 150 BCX 41/BSS 64 EHP00426 T_A 5 10 10 nA 10 ΙCB0 5 5 5 10 10 4 3 2 1 0 -1 max typ ˚C

Transition frequency f_T = ƒ(IC) V_CE = 5 V 10 10 10 10 BCX 41/BSS 64 EHP00423 f mA MHz 0 ₅ 1 2 3 T 3 10 102 1 10 5 5 5 C Ι Collector-base capacitance C_cb=ƒ(VCB) Emitter-base capacitance C_eb=_ƒ(VEB) 0 5 10 V 20 V_CB(V_EB 0 10 20 30 40 50 60 70 80 pF 100 CCB (CEB ) CCB CEB

Total power dissipation P_tot = ƒ(TS)

0 15 30 45 60 75 90 105 120 _°C 150 T_S 0 50 100 150 200 250 300 mW 400 Ptot

Permissible Pulse Load P_totmax/P_totDC = _ƒ(tp) 10 EHP00422 BCX 41/BSS 64 -6 0 10 5 D = 5 101 5 102 3 10 10-5 10-4 10-3 10-2 s 100 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 tp = D T tp T tot max tot P DC P p t

P a c k a g e O u t l i n e F o o t P r i n t M a r k i n g L a y o u t ( E x a m p l e ) S t a n d a r d P a c k i n g Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel

EH

s

BCW66 Type code Pin 1 0.8 0.9 0.9 1.3 0.8 1.2 0.25M B C 1.9 -0.05 +0.1 0.4 ±0.1 2.9 0.95 C B 0...8˚ 0.2 A 0.1 MAX. 10˚ MAX. 0.08...0.15 1.3 ±0.1 10˚ MAX. M 2.4 ±0.15 ±0.1 1 A 0.15 MIN. 1)

1) Lead width can be 0.6 max. in dambar area

1 2 3 3.15 4 2.65 2.13 0.9 8 0.2 1.15 Pin 1 Manufacturer 2005, June Date code (YM)

Edition 2009-11-16 Published by

Infineon Technologies AG 81726 Munich, Germany

 2009 Infineon Technologies AG

All Rights Reserved.

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>).

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office.

Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.