Problems of Modeling the Phase Transformations in Nonlinear and Relaxed Optics
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![Fig. 1 : AFM 3D images of: (a) SiO2 surface after irradiation of SiO2/Si structure by second harmonic Nd:YAG laser at I=2.0 MW/cm2 and (b) Si surface after subsequent removing of SiO2 by HF acid [20]](https://thumb-us.123doks.com/thumbv2/123dok_us/1411178.1653841/3.595.179.414.627.716/images-surface-irradiation-structure-harmonic-surface-subsequent-removing.webp)
![Fig. 2: Three-dimensional AFM image of nanostructures after Nd:YAG laser irradiation with density of power 28 MW/cm2 on Ge surface [20]](https://thumb-us.123doks.com/thumbv2/123dok_us/1411178.1653841/4.595.185.404.433.570/dimensional-image-nanostructures-laser-irradiation-density-power-surface.webp)
![Fig. 8: between the microdots along the hill of periodic microstructures as a function of the number of laser pulses a) Period of parallel periodic microstructures as a function of number of laser pulses; b) Distance [27]](https://thumb-us.123doks.com/thumbv2/123dok_us/1411178.1653841/7.595.106.485.374.551/microdots-periodic-microstructures-function-parallel-periodic-microstructures-distance.webp)
![Table 2. Surface density of energy chemical bonds in Isi (J/cm2), which are necessary for the breakage of proper numbers of Si and Ge crystals after proper lasers irradiation in regime of saturation the excitation [25, 26] Semiconductor and II I I](https://thumb-us.123doks.com/thumbv2/123dok_us/1411178.1653841/10.595.81.522.175.273/surface-chemical-necessary-breakage-irradiation-saturation-excitation-semiconductor.webp)
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