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Effects of an intense, high frequency laser field on bound states in Ga1 − xInx Ny As1 − y/GaAs double quantum well

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Figure

Figure 1 The variation of the laser-dressed potential, boundstates, and squared wave functions
Figure 3 Change of ground state energy levels. As a function ofN (a) and In (b) concentrations in Ga1 − xInxNyAs1 − y/GaAsDQW fordifferent laser-dressing parameters.

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