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One Step Mask Etching Strategy Toward Ordered Ferroelectric Pb(Zr0 52Ti0 48)O3 Nanodot Arrays

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Figure

Fig. 1 Fabrication details for the PZT nanodot arrays. a Schematic illustration of the fabrication procedures of ordered PZT nanodot arrays byone-step mask etching method, utilizing the barrier layer of AAO as mask: (i) the first long-time etching by the A
Figure 2a, b illustrated the X-ray diffraction pattern(XRD) and Raman scattering spectrum of PZT nanodotarrays, respectively, measured at room temperature.
Fig. 3 Piezoresponse images for the polarization reversal process in the nanodot arrays.cross-sectional height data along the scanned a Topological, in which the blue line represents the AFM red line

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