Maximum Ratings Parameter Symbol Value Unit SPP Continuous drain current

Rev. 2.6 Page 1 2007-08-30

Cool MOS™ Power Transistor _V

_DS

_{800 V}

R

_DS(on)

0.9 Ω

I

_D

6 A

Feature

• New revolutionary high voltage technology

• Ultra low gate charge

• Periodic avalanche rated

• Extreme dv/dt rated

• Ultra low effective capacitances

• Improved transconductance

• PG-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

PG-TO220-3-31 PG-TO220

P-TO220-3-31

123

Marking 06N80C3 06N80C3

Type Package Ordering Code

SPP06N80C3 P G-TO220 Q67040-S4351 SPA06N80C3 P G-TO220-3-31 SP000216302

Maximum Ratings

Parameter Symbol Value Unit

SPA Continuous drain current

T_C = 25 °C T_C = 100 °C

I

_D

6 3.8

6

¹⁾

3.8

¹⁾

A

Pulsed drain current, t

_p

limited by T

_jmax

I

_{D puls}

18 18 A Avalanche energy, single pulse

I_D=1.2A,V_DD=50V

E

_AS

230 230 mJ

Avalanche energy, repetitive t

_AR

limited by T

_jmax²⁾

I_D=6A,V_DD=50V

E

_AR

0.2 0.2

Avalanche current, repetitive t

_AR

limited by T

_jmax

I

_AR

6 6 A

Gate source voltage V

_GS

±20 ±20 V

Gate source voltage AC (f >1Hz) V

_GS

±30 ±30

Power dissipation,

T_C = 25°C

P

_tot

83 39 W

SPP

Operating and storage temperature T

_{j ,}

T

_stg

-55...+150 °C

Rev. 2.6 Page 2 2007-08-30

Maximum Ratings

Parameter Symbol Value Unit

Drain Source voltage slope

V_DS = 640 V, I_D = 6 A, T_j = 125 °C

dv/dt 50 V/ns

Thermal Characteristics

Parameter Symbol Values Unit

min. typ. max.

Thermal resistance, junction - case R

_thJC

- - 1.5 K/W

Thermal resistance, junction - case, FullPAK R

_{thJC_FP}

- - 3.9 Thermal resistance, junction - ambient, leaded R

_thJA

- - 62 Thermal resistance, junction - ambient, FullPAK R

_{thJA_FP}

- - 80 Soldering temperature, wavesoldering

1.6 mm (0.063 in.) from case for 10s

³⁾

T

_sold

- - 260 °C

Electrical Characteristics, at Tj=25°C unless otherwise specified

Parameter Symbol Conditions Values Unit

min. typ. max.

Drain-source breakdown voltage V

_{(BR)DSS VGS}=0V, I_D=0.25mA

800 - - V Drain-Source avalanche

breakdown voltage

V

_(BR)DS ^VGS=0V, I_D=6A

- 870 -

Gate threshold voltage V

_GS(th) I_D=250µA, VGS=VDS

2.1 3 3.9 Zero gate voltage drain current I

_DSS ^V_DS^=800V,V_GS^=0V,

T_j=25°C T_j=150°C

- -

0.5 -

10 100

µA

Gate-source leakage current I

_GSS ^V_GS=20V,V_DS=0V

- - 100 nA Drain-source on-state resistance R

_DS(on) ^V_GS^{=10V, I}_D^=3.8A

T_j=25°C T_j=150°C

- -

0.78 2.1

0.9 -

Ω

Gate input resistance R

_G f=1MHz, open drain

- 0.7 -

Rev. 2.6 Page 3 2007-08-30

Electrical Characteristics

Parameter Symbol Conditions Values Unit

min. typ. max.

Transconductance g

_fs V_DS≥2*I_D*R_DS(on)max, I_D=3.8A

- 4 - S

Input capacitance C

_iss V_GS=0V,V_DS=25V, f=1MHz

- 785 - pF

Output capacitance C

_oss

- 390 -

Reverse transfer capacitance C

_rss

- 20 -

Effective output capacitance,

⁴⁾

energy related

C

_o(er) ^VGS=0V,

V_DS=0V to 480V

- 22 -

Effective output capacitance,

⁵⁾

time related

C

_o(tr)

- 42 -

Turn-on delay time t

_d(on) V_DD=400V,V_GS=0/10V, I_D=6A,

R_G=15Ω,T_j=125°C

- 25 - ns

Rise time t

_r

- 15 -

Turn-off delay time t

_d(off)

- 65 75

Fall time t

_f

- 8 11

Gate Charge Characteristics

Gate to source charge Q

_gs V_DD=640V, I_D=6A

- 3.3 - nC

Gate to drain charge Q

_gd

- 14 -

Gate charge total Q

_g ^VDD=640V, I_D=6A, V_GS=0 to 10V

- 27 35

Gate plateau voltage V

_(plateau) ^V_DD=640V, I_D=6A

- 6 - V

1Limited only by maximum temperature

2Repetitve avalanche causes additional power losses that can be calculated as P_AV=E_AR*f.

3Soldering temperature for TO-263: 220°C, reflow

4C_o(er) is a fixed capacitance that gives the same stored energy as C_oss while V_DS is rising from 0 to 80% V_DSS. 5C_o(tr) is a fixed capacitance that gives the same charging time as C_oss while V_DS is rising from 0 to 80% V_DSS.

Rev. 2.6 Page 4 2007-08-30

Electrical Characteristics

Parameter Symbol Conditions Values Unit

min. typ. max.

Inverse diode continuous forward current

I

_S ^T_C^=25°C

- - 6 A

Inverse diode direct current, pulsed

I

_SM

- - 18

Inverse diode forward voltage V

_SD ^V_GS^{=0V, I}_F^=I_S

- 1 1.2 V Reverse recovery time t

_rr V_R=400V, I_F=I_S ,

di_F/dt=100A/µs

- 520 - ns

Reverse recovery charge Q

_rr

- 5 - µC

Peak reverse recovery current I

_rrm

- 18 - A

Peak rate of fall of reverse recovery current

di

_rr

/dt

^T_j^=25°C

- 400 - A/µs

Typical Transient Thermal Characteristics

Symbol Value Unit Symbol Value Unit

SPA SPA

R

_th1

0.024 0.024 K/W C

_th1

0.0001172 0.0001172 Ws/K

R

_th2

0.048 0.048 C

_th2

0.000447 0.000447

R

_th3

0.083 0.086 C

_th3

0.0006303 0.0006303

R

_th4

0.309 0.195 C

_th4

0.001828 0.001828

R

_th5

0.317 0.451 C

_th5

0.004786 0.007578

R

_th6

0.112 2.51 C

_th6

0.046 0.412

SPP SPP

External Heatsink

Tj T_case

Tam b

C_th1 C_th2

R_th1 R_th,n

C_th,n P_tot(t)

Rev. 2.6 Page 5 2007-08-30

1 Power dissipation P

_tot

= f (T

_C

)

0 20 40 60 80 100 120 °C ¹⁶⁰

T_C

0 10 20 30 40 50 60 70 80 W

100 ^SPP06N80C3

Ptot

2 Power dissipation FullPAK P

_tot

= f (T

_C

)

0 20 40 60 80 100 120 °C ¹⁶⁰ T_C

0 5 10 15 20 25 30

W

40

Ptot

3 Safe operating area I

_D

= f ( V

_DS

)

parameter : D = 0 , T

_C

=25°C

10⁰ 10¹ 10² V 10³

V_DS

10-2

10-1

100

101

102

A

ID

tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC

4 Safe operating area FullPAK I

_D

= f (V

_DS

)

parameter: D = 0, T

_C

= 25°C

10⁰ 10¹ 10² V 10³

V_DS

10-2

10-1

100

101

102

A

ID

tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC

Rev. 2.6 Page 6 2007-08-30

5 Transient thermal impedance Z

_thJC

= f (t

_p

)

parameter: D = t

_p

/T

10^-7 10^-6 10^-5 10^-4 10^-3 s 10^-1

t_p

10-3

10-2

10-1

100

101

K/W

ZthJC

D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse

6 Transient thermal impedance FullPAK Z

_thJC

= f (t

_p

)

parameter: D = t

_p

/t

10^-7 10^-6 10^-5 10^-4 10^-3 10^-2 10^-1 s 10¹

t_p

10-3

10-2

10-1

100

101

K/W

ZthJC

D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse

7 Typ. output characteristic I

_D

= f (V

_DS

); T

_j

=25°C

parameter: t

_p

= 10 µs, V

_GS

0 5 10 15 20 V ³⁰

V_DS

0 2 4 6 8 10 12 14 16

A

20

ID

5V 6V 7V 8V 20V

10V

8 Typ. output characteristic I

_D

= f (V

_DS

); T

_j

=150°C

parameter: t

_p

= 10 µs, V

_GS

0 5 10 15 20 V ³⁰

V_DS

0 1 2 3 4 5 6 7 8 9

A

11

ID

4V 4.5V 5V 5.5V 6V 7V 20V 10V 8V

Rev. 2.6 Page 7 2007-08-30

9 Typ. drain-source on resistance R

_DS(on)

=f(I

_D

)

parameter: T

_j

=150°C, V

_GS

0 2 4 6 8 A ¹¹

I_D

1 1.5 2 2.5 3 3.5 4

Ω

5

RDS(on)

4V

4.5V 5V

5.5V 6V

7V 8V 10V 20V

10 Drain-source on-state resistance R

_DS(on)

= f (T

_j

)

parameter : I

_D

= 3.8 A, V

_GS

= 10 V

-60 -20 20 60 100 °C 180

T_j

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5

Ω

5.5 ^SPP06N80C3

RDS(on)

typ 98%

11 Typ. transfer characteristics I

_D

= f ( V

_GS

); V

_DS

≥ 2 x I

_D

x R

_DS(on)max

parameter: t

_p

= 10 µs

0 2 4 6 8 10 12 14 16 V ²⁰

V_GS

0 2 4 6 8 10 12 14 16

A

20

ID

25°C

150°C

12 Typ. gate charge V

_GS

= f (Q

_Gate

)

parameter: I

_D

= 6 A pulsed

0 5 10 15 20 25 30 35 40 nC ⁵⁰ Q_Gate

0 2 4 6 8 10 12 V

16 ^SPP06N80C3

VGS 0,8 V_{DS max}^{DS max}V0,2

Rev. 2.6 Page 8 2007-08-30

13 Forward characteristics of body diode I

_F

= f (V

_SD

)

parameter: Tj , t

^p

= 10 µs

0 0.4 0.8 1.2 1.6 2 2.4 V ³

V_SD

10-1

100

101

102

A

SPP06N80C3

IF

T_j = 25 °C typ T_j = 25 °C (98%) T_j = 150 °C typ T_j = 150 °C (98%)

14 Avalanche SOA I

_AR

= f (t

_AR

)

par.: T

_j

≤ 150 °C

10^-3 10^-2 10^-1 10⁰ 10¹ 10² µs 10⁴

t_AR

0 1 2 3 4

A

6

IAR

TJ(Start) = 25°C

TJ(Start) = 125°C

15 Avalanche energy E

_AS

= f (T

_j

)

par.: I

_D

= 1.2 A, V

_DD

= 50 V

25 50 75 100 °C ¹⁵⁰

T_j

0 25 50 75 100 125 150 175 200

mJ

250

EAS

16 Drain-source breakdown voltage V

_(BR)DSS

= f (T

_j

)

-60 -20 20 60 100 °C ¹⁸⁰

T_j

720 740 760 780 800 820 840 860 880 900 920 940 V

980 ^SPP06N80C3

V(BR)DSS

Rev. 2.6 Page 9 2007-08-30

17 Avalanche power losses P

_AR

= f (f )

parameter: E

_AR

=0.2mJ

10⁴ 10⁵ Hz 10⁶

f

0 20 40 60 80 100 120 140 160

W

200

PAR

18 Typ. capacitances C = f (V

_DS

)

parameter: V

_GS

=0V, f=1 MHz

0 100 200 300 400 500 600 V ⁸⁰⁰ V_DS

100

101

102

103

104

pF

C

C_iss

C_oss

C_rss

19 Typ. C

_oss

stored energy E

_oss

=f(V

_DS

)

0 100 200 300 400 500 600 V ⁸⁰⁰ V_DS

0 1 2 3 4 5

µJ

7

Eoss

Rev. 2.6 Page 10 2007-08-30

Definition of diodes switching characteristics

2007-08-30

Rev. 2.6 Page 11

PG-TO220-3-1, PG-TO220-3-21

2007-08-30

Rev. 2.6 Page 12

PG-TO220-3-31 (FullPAK)

Rev. 2.6 Page 13 2007-08-30 Published by

Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München

© Infineon Technologies AG 1999 All Rights Reserved.

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