Smart Highside Power Switch

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PROFET® BTS 432 E2

Smart Highside Power Switch

Features

• Load dump and reverse battery protection1)

• Clamp of negative voltage at output

• Short-circuit protection

•_{Current limitation} • Thermal shutdown

•_{Diagnostic feedback}

• Open load detection in ON-state

•_{CMOS compatible input}

• Electrostatic discharge (ESD) protection

• Loss of ground and loss of Vbb protection2)

•_{Overvoltage protection}

• Undervoltage and overvoltage shutdown with auto-restart and hysteresis

Application

•_µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads

• All types of resistive, inductive and capacitve loads

•_{Replaces electromechanical relays and discrete circuits}

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS chip on chip technology. Providing protective functions.

+ Vbb IN ST Signal GND ESD PROFET OUT GND Logic Voltage sensor Voltage source Open load detection Short circuit detection Charge pump

Level shifter Temperature

sensor Rectifier Limit for unclamped ind. loads Gate protection Current limit 2 4 1 3 5 Load GND Load V_Logic Overvoltage protection Rbb

1) No external components required, reverse load current limited by connected load.

2)_{Additional external diode required for charged inductive loads}

Product Summary

VLoad dump

80 V

Vbb

-VOUT Avalanche Clamp

58 V

Vbb (operation)

4.5 ... 42

V

Vbb (reverse)

-32

V

RON

38 m

Ω

IL(SCp)

44 A

IL(SCr)

35 A

IL(ISO)

11 A

1 5 Straight leads 1 5 SMD 5 Standard

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BTS 432 E2

Pin Symbol

Function

1 GND

-

Logic

ground

2 IN

I

Input, activates the power switch in case of logical high signal

3 Vbb

+

Positive power supply voltage,

the tab is shorted to this pin

4 ST

S

Diagnostic feedback, low on failure

5 OUT

(Load, L)

O

Output to the load

Maximum Ratings at T

j

= 25 °C unless otherwise specified

Parameter Symbol

Values

Unit

Supply voltage (overvoltage protection see page 3)

V

bb

63 V

Load dump protection V

LoadDump

= UA + Vs, UA = 13.5 V

RI= 2

Ω

, RL= 1.1

Ω

, td= 200 ms, IN= low or high

V

s3)

66.5 V

Load current (Short-circuit current, see page 4)

I

L

self-limited

A

Operating temperature range

Storage temperature range

T

j

T

stg

-40 ...+150

-55 ...+150

°C

Power dissipation (DC)

P

tot

125 W

Inductive load switch-off energy dissipation,

single pulse

T

j=150 °C:

E

AS

1.7 J

Electrostatic discharge capability (ESD)

(Human Body Model)

V

ESD 2.0

kV

Input voltage (DC)

V

IN

-0.5 ... +6

V

Current through input pin (DC)

Current through status pin (DC)

see internal circuit diagrams page 6...

I

IN

I

ST

±

5.0 ±

5.0 mA

Thermal resistance

chip - case:

junction - ambient (free air):

R

thJC

R

thJA

≤

1 ≤

75 K/W

SMD version, device on pcb

4)

_:

≤

_tbd

3) _V

S is setup without DUT connected to the generator per ISO 7637-1 and DIN 40839

4_{) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm}2_{(one layer, 70}µ

m thick) copper area for Vbb connection. PCB is vertical without blown air.

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BTS 432 E2

Electrical Characteristics

Parameter and Conditions Symbol

Values

Unit

at Tj = 25 °C, Vbb = 12 V unless otherwise specified

_{min typ}

_max

Load Switching Capabilities and Characteristics

On-state resistance (pin 3 to 5)

IL = 2 A

T

j=25 °C:

T

j=150 °C:

R

ON

--

30

55

38

70 m

Ω

Nominal load current (pin 3 to 5)

ISO Proposal: V

ON

= 0.5 V, T

C

= 85 °C

I

L(ISO)

9

11 --

A

Output current (pin

5

) while GND disconnected or

GND pulled up, VIN= 0, see diagram page 7,

T

j

=-40...+150°C

I

L(GNDhigh)

-- -- 1

mA

Turn-on time

to 90% V

OUT

:

Turn-off time

to 10% V

OUT

:

R

L

= 12

Ω

, T

j

=-40...+150°C

t

on

t

off

50

10

160 --

300

80 µ

s

Slew rate on

10 to 30% V

OUT, RL = 12

Ω

, T

j

=-40...+150°C

dV /dt

on

0.4 --

2.5 V/

µ

s

Slew rate off

70 to 40% V

OUT

, R

L = 12

Ω

, T

j

=-40...+150°C

-dV/dt

off 1

--

5 V/

µ

s

Operating Parameters

Operating voltage

5

)

_T

_j

_{=-40...+150°C: V}

bb(on)

4.5 --

42 V

Undervoltage shutdown

T

j

=-40...+150°C: V

bb(under)

2.4 --

4.5 V

Undervoltage restart

T

j

=-40...+150°C: V

bb(u rst)

--

4.5 V

Undervoltage restart of charge pump

see diagram page 12

T

j

=-40...+150°C:

V

bb(ucp)

-- 6.5 7.5

V

Undervoltage hysteresis

∆

V

bb(under)

= V

bb(u rst)

- V

bb(under)

∆

V

bb(under)

-- 0.2 --

V

Overvoltage shutdown

T

j

=-40...+150°C: V

bb(over)

42 --

52 V

Overvoltage restart

T

j

=-40...+150°C: V

bb(o rst)

42 -- --

V

Overvoltage hysteresis

T

j

=-40...+150°C:

∆

V

bb(over)

-- 0.2 --

V

Overvoltage protection

6)

_T

_j

_=-40°C:

Ibb=40 mA

T

j

=25...+150°C:

V

bb(AZ)

60

63 --

67 --

V

Standby current (pin 3)

T

j=-40...+25°C:

VIN=0

T

j=150°C:

I

bb(off)

--

12

18

25

60 µ

A

Leakage output current (included in Ibb(off))

VIN=0

I

L(off)

-- 6 --

µ

A

Operating current (Pin 1)

7)

_{, VIN=5 V}

_I

GND

-- 1.1 --

mA

5) At supply voltage increase up to V_bb_{= 6.5 V typ without charge pump, V}_OUT_≈_V_bb_{- 2 V}

6) _{see also V}_ON(CL)_{in table of protection functions and circuit diagram page 7. Meassured without load}_. 7) _{Add I}_ST_{, if I}_ST_{> 0, add I}_IN_{, if V}_IN_{>5.5 V}

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BTS 432 E2

Parameter and Conditions Symbol

Values

Unit

min typ

max

Protection Functions

8)

Initial peak short circuit current limit (pin 3 to 5)

9)

_,

(

max 400

µ

s if VON > VON(SC) )

I

L(SCp)

T

j =-40°C:

T

j =25°C:

T

j =+150°C:

--

24 --

44 --

74 --A

Repetitive short circuit current limit

I

L(SCr)

T

j

= T

jt

(see timing diagrams, page 10)

22

35 --

A

Short circuit shutdown delay after input pos. slope

V

ON

> V

ON(SC)

,

T

j =-40..+150°C:

min value valid only, if input "low" time exceeds 30 µs

t

d(SC)

₈₀

_{-- 400}

_µ

_s

Output clamp (inductive load switch off)

at V

OUT

= V

bb

- V

ON(CL),

I

L= 30 mA

V

ON(CL)

--

58 --

V

Short circuit shutdown detection voltage

(pin 3 to 5)

V

ON(SC)

--

8.3 --

V

Thermal overload trip temperature

T

jt

150 -- --

°C

Thermal hysteresis

∆

T

jt

-- 10 --

K

Inductive load switch-off energy dissipation

10)

_,

T

j Start

= 150 °C, single pulse

V

bb = 12 V:

V

bb = 24 V:

E

AS

E

Load12

E

Load24

-- --

1.7

1.3

1.0 J

Reverse battery (pin 3 to 1)

11

)

_-V

bb

--

32 V

Integrated resistor in Vbb line

R

bb --

120 --

Ω

Diagnostic Characteristics

Open load detection current

T

j=-40 °C:

(on-condition)

T

j=25..150°C:

I

L (OL)

2

2 --

--

900

750 mA

8_{) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the}

data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation.

9_{) Short circuit current limit for max. duration of 400}_µ_{s, prior to shutdown (see t}

d(SC) page 4)

10)_{While demagnetizing load inductance, dissipated energy in PROFET is E}

AS= VON(CL) * iL(t) dt, approx.

EAS= 1/₂_{* L * I}2_L * (_V VON(CL)

ON(CL) - Vbb ), see diagram page 8

11_{) Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load.}

Reverse current I_GND of ≈ 0.3 A at V_bb= -32 V through the logic heats up the device. Time allowed under these condition is dependent on the size of the heatsink. Reverse I_GND can be reduced by an additional external GND-resistor (150 Ω). Input and Status currents have to be limited (see max. ratings page 2 and circuit page 7).

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BTS 432 E2

Parameter and Conditions Symbol

Values

Unit

min typ

max

Input and Status Feedback

12)

Input turn-on threshold voltage

T

j =-40..+150°C:

V

IN(T+)

1.5 --

2.4 V

Input turn-off threshold voltage

T

j =-40..+150°C:

V

IN(T-)

1.0 -- --

V

Input threshold hysteresis

∆

V

IN(T)

-- 0.5 --

V

Off state input current (pin 2)

V

IN

= 0.4 V: I

IN(off)

1 --

30 µ

A

On state input current (pin 2)

V

IN

= 3.5 V: I

IN(on)

10 25 50

µ

A

Status invalid after positive input slope

(short circuit)

Tj=-40 ... +150°C:

t

d(ST SC)

80 200 400

µ

s

Status invalid after positive input slope

(open load)

Tj=-40 ... +150°C:

t

d(ST)

350 --

1600

µ

s

Status output (open drain)

Zener limit voltage T

j

=-40...+150°C, I

ST

= +1.6 mA:

ST low voltage T

j

=-40...+150°C, I

ST

= +1.6 mA:

V

ST(high)

V

ST(low)

5.4 --

6.1 --

--0.4

V

12)_{If a ground resistor R}

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BTS 432 E2

Truth Table

Input- Output Status level level 432 D2 432 E2/F2 432 I2 Normal operation L H L H H H H H H H Open load L H 13) H H L H L L H Short circuit to GND L H L L H L H L H L Short circuit to Vbb L H H H H H (L14)) H H (L14)₎ L H Overtem-perature L H L L L L L L L L Under-voltage L H L L L15) L15) H H L15) L15) Overvoltage L H L L L L H H L L L = "Low" Level H = "High" Level

13_{) Power Transistor off, high impedance} 14_{) Low resistance short V}

bb to output may be detected by no-load-detection 15_{) No current sink capability during undervoltage shutdown}

Terms

PROFET V IN ST OUT GND bb VST V_IN IST IIN V bb Ibb IL VOUT IGND VON 1 2 4 3 5 R_GND

Input circuit (ESD protection)

IN GND I R ZD ZD I I I1 I2

ESD-ZDI1 6.1 V typ., ESD zener diodes are not designed for

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BTS 432 E2

Status output

ST GND ESD-ZD +5V R_ST(ON)

ESD-Zener diode: 6.1 V typ., max 5 mA;

RST(ON) < 250 Ω at 1.6 mA, ESD zener diodes are not designed for continuous current

Short Circuit detection

Fault Condition: VON > 8.3 V typ.; IN high

Short circuit detection Logic unit + Vbb OUT V ON

Inductive and overvoltage output clamp

+ Vbb OUT GND V_Z V_ON VON clamped to 58 V typ.

Overvolt. and reverse batt. protection

+ Vbb V_OUT IN ST bb R Signal GND Logic PROFET V_Z R_GND GND IN R ST R

Rbb = 120 Ω typ., VZ +Rbb*40 mA = 67 V typ., add

RGND, RIN, RST for extended protection

Open-load detection

ON-state diagnostic condition: VON < RON * IL(OL); IN high Open load detection Logic unit + Vbb OUT ON VON

GND disconnect

PROFET V IN ST OUT GND bb V_bb 1 2 4 3 5 V_{IN VST} _V GND

Any kind of load. In case of Input=high is VOUT ≈ VIN - VIN(T+) .

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BTS 432 E2

GND disconnect with GND pull up

PROFET V IN ST OUT GND bb V bb 1 2 4 3 5 V GND V INVST

Any kind of load. If VGND > VIN - VIN(T+) device stays off

Due to VGND >0, no VST = low signal available.

Vbb disconnect with charged inductive

load

PROFET V IN ST OUT GND bb V bb 1 2 4 3 5 high PROFET V IN ST OUT GND bb V bb 1 2 4 3 5 high

Inductive Load switch-off energy

dissipation

PROFET V IN ST OUT GND bb = E E E EAS bb L R ELoad

Energy dissipated in PROFET EAS = Ebb + EL - ER.

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BTS 432 E2

Options Overview

all versions: High-side switch, Input protection, ESD protection, load dump and

reverse battery protection , protection against loss of ground

Type

BTS 432D2 432E2 432F2 432I2

Logic version

D E F I

Overtemperature protection

Tj >150 °C, latch function

16)17)

Tj >150 °C, with auto-restart on cooling

X

X X

Short-circuit to GND protection

switches off when VON>8.3 V typ.16)

(when first turned on after approx. 200 µs)

X X X X

Open load detection

in OFF-state with sensing current 30

µ

A typ. in ON-state with sensing voltage drop across

power transistor X X X

X

Undervoltage shutdown with auto restart

X X X X

Overvoltage shutdown with auto restart

_X _X _{X X}

Status feedback for

overtemperature short circuit to GND short to Vbb open load undervoltage overvoltage X X -18) X X X X X -18) X - - X X -18) X - - X X X X X X

Status output type

CMOS Open drain

X

X X

X

Output negative voltage transient limit

(fast inductive load switch off)

to Vbb - VON(CL) X X X X

Load current limit

high level (can handle loads with high inrush currents)

medium level

low level (better protection of application)

X X

X

16_{) Latch except when V}

bb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT ≠

0 V only if forced externally). So the device remains latched unless V_bb < V_ON(SC) (see page 4). No latch between turn on and td(SC).

17) _{With latch function. Reseted by a) Input low, b) Undervoltage, c) Overvoltage} 18_{) Low resistance short V}

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BTS 432 E2

Timing diagrams

Figure 1a: Vbb turn on:

IN V OUT t V bb ST open drain A A t d(bb IN)

in case of too early VIN=high the device may not turn on (curve A)

td(bb IN) approx. 150 µs

Figure 2a: Switching a lamp,

IN ST OUT L t V I

Figure 2b: Switching an inductive load

IN ST L t V I *) OUT td(ST) IL(OL)

*) if the time constant of load is too large, open-load-status may occur

Figure 3a: Turn on into short circuit,

IN ST OUT L t V I td(SC)

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BTS 432 E2

Figure 3b: Turn on into overload,

IN ST L t I L(SCr) I IL(SCp)

Heating up may require several milliseconds , Vbb - VOUT < 8.3 V

typ.

Figure 3c: Short circuit while on:

IN ST OUT L t V I **)

**) current peak approx. 20 µs

Figure 4a: Overtemperature:

Reset if Tj <Tjt IN ST OUT J t V T

Figure 5a: Open load: detection in ON-state, turn

on/off to open load

IN ST OUT L t V I open t d(ST)

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BTS 432 E2

Figure 5b: Open load: detection in ON-state, open

load occurs in on-state

IN ST OUT L t V

I normal open normal

td(ST OL1) td(OL ST2)

td(ST OL1) = tbd µs typ., td(ST OL2) = tbd µs typ

Figure 6a: Undervoltage:

IN V OUT t V bb ST open drain V V bb(under) bb(u rst) bb(u cp) V

Figure 6b: Undervoltage restart of charge pump VON [V] bb(under) V V_{bb(u rst)} V bb(over) V bb(o rst) V bb(u cp) off on off VON(CL) V_bb V_on Vbb [V]

charge pump starts at Vbb(ucp) =6.5 V typ.

Figure 7a: Overvoltage:

IN V OUT t V bb ST ON(CL) V V_bb(over) V_{bb(o rst)}

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BTS 432 E2

Package and Ordering Code

All dimensions in mm

Standard TO-220AB/5

Ordering code

BTS 432 E2 Q67060-S6202-A2

TO-220AB/5, Option E3043

Ordering code

BTS 432 E2 E3043 Q67060-S6202-A4

SMD TO-220AB/5, Opt. E3062

Ordering code BTS432E2 E3062A T&R: Q67060-S6202-A6

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BTS 432 E2

Published by

Infineon Technologies AG, St.-Martin-Strasse 53, D-81669 München

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