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inst.eecs.berkeley.edu/~ee241b

Borivoje Nikolić

EE241B : Advanced Digital Circuits

Lecture 8 – Standard Cells

EECS241B L08 STANDARD CELLS 1

‘I’m Not a Cat,’ Says Lawyer 

Having Zoom Difficulties

The video was immediately shared 

widely and brought joy to many. 

The lawyer, Rod Ponton, said he 

was happy people got a much‐

needed laugh

NY Times, Feb 9, 2021.

Announcements

Assignment 1+Lab 2 due next week

No lecture next Tuesday

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2/11/2021

2

Outline

Standard cell libraries

Gate delays

3 EECS241B L08 STANDARD CELLS

2.J Standard Cells

4 EECS241B L08 STANDARD CELLS

3

(3)

Standard Cell Inverter

Schematic and layout

(in a planar bulk process)

Polysilicon

In

Out

VDD

GND

PMOS

2

Metal 1

NMOS

Out

In

V

DD

PMOS

NMOS

Contacts

N Well

EECS241B L08 STANDARD CELLS 5

Pitches are integer multiples of 

Two Inverters

Connect in Metal

Share power and ground

Abut cells

V

DD

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4

FinFET Standard Cells

EECS241B L08 STANDARD CELLS 7

V. Vashishtha, ICCAD’17

ASAP7

ASAP7 Standard Cells

EECS241B L08 STANDARD CELLS 8

7

(5)

ASAP7 Standard Cells

EECS241B L08 STANDARD CELLS 9

ASAP7 Standard Cells

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ASAP7 Standard Cells

EECS241B L08 STANDARD CELLS 11

ASAP7 Standard Cells

EECS241B L08 STANDARD CELLS 12

11

(7)

ASAP7 Standard Cells

EECS241B L08 STANDARD CELLS 13

ASAP7 Standard Cells

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ASAP7 Standard Cells

EECS241B L08 STANDARD CELLS 15

ASAP7 Standard Cells

EECS241B L08 STANDARD CELLS 16

15

(9)

ASAP7 Standard Cells

EECS241B L08 STANDARD CELLS 17

ASAP7 Standard Cells

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ASAP7 Standard Cells

EECS241B L08 STANDARD CELLS 19

ASAP7 Latch

EECS241B L08 STANDARD CELLS 20

19

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2.K Design Kit

21 EECS241B L08 STANDARD CELLS

Design Kit Components

Physical views

Layout and schematic, with abstractions

Netlist

Logical view

Test view

Timing, power and noise views

Documentation

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12

EE241B Technology

ASAP7 7nm predictive technology kit

Also available Synopsys 32/28nm Generic Library

Multi-vth Standard Cell Library 45 IO pads

SRAMs

Design rule manual

EECS241B L08 STANDARD CELLS 23

2.L Delay Revisited

24 EECS241B L08 STANDARD CELLS

23

(13)

How to Account for Input Slope?

t

pHL

= 0.7 R

eq

C

L

EECS241B L08 STANDARD CELLS 25

0

V

DD

V

DD

0

Out In VDD CL Out In VDD CL

V

DD

0

V

DD

0

t

pHL

= 0.7 R

eq

C

L

different R

eq

!

t

p

= ln2 RC = 0.7 R

eq

C

L

T

r,10-90

= 2.2 R

eq

C

L

T

r,20-80

= 1.4 R

eq

C

L

Input Slope Dependence

One way to analyze slope effect

out

out

L

NMOS

PMOS

dV

I

C

I

I

dt

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2/11/2021

14

Slope Analysis

For falling edge at output:

For reasonable inputs, can ignore I

PMOS

Either V

DS

is very small, or V

GS

is very small

So, output current ramp starts when V

in

=V

ThZ

Could evaluate the integral

Learn more by using an intuitive, graphical approach

EECS241B L08 STANDARD CELLS 27

Slope Dependence

I

out

ramps linearly for

V

ThZ

<V

in

<V

DD

Constant once V

in

=V

DD

C

L

integrates I

out

V

ThZ

<V

in

<V

DD

: V

out

quadratic

V

in

= V

DD

: V

out

linear

0

V

ThZ

V

DD

/2

V

DD

V

in

0

I

DSAT

I

out

V

DD

/2

V

DD

V

out

I

DSAT

/2

t

p,ramp

EECS241B L08 STANDARD CELLS 28

27

(15)

Slope Dependence

EECS241B L08 STANDARD CELLS 29

Slope Dependence

Compare to step input whose

output crosses V

DD

/2 at same

time

V

out

set by charge removed

from C

L

Need to make

Q

R

= Q

S

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2/11/2021

16

Slope Dependence

EECS241B L08 STANDARD CELLS 31

0

V

ThZ

V

DD

/2

V

DD

V

in

0

I

DSAT

I

out

V

DD

/2

V

DD

V

out

I

DSAT

/2

tp,step

V

half

= (V

DD

+V

ThZ

)/2

t

p,ramp

t

slope

To find Δt

slope

:

Find V

in

= V

half

when I

out

= I

DSAT

/2

And use input t

r

I

DSAT

α (V

DD

-V

ThZ

):

V

half

= (V

DD

+V

ThZ

)/2

So Δt

slope

= (V

ThZ

/2)/k

r

k

r

= V

DD

/(t

r,20-80

) = V

DD

/(2*t

p,in

)

t

p,in

– input propagation delay

𝑡

,

𝑡

,

𝑉

𝑘

/2

𝑡

,

𝑉

𝑉

𝑡

,

Result Summary

For reasonable input slopes:

For t

p,avg

: V

ThZ

is (V

ThZN

+ V

ThZP

)/2

V

ThZ

/V

DD

typically ~1/3-1/2 at nominal supplies

Propagation delay is a function of

Drive strength (R

eq

)

Load (C

L

)

Input rise/fall time (which is proportional to the propagation delay of the previous gate)

EECS241B L08 STANDARD CELLS 32

𝑡

,

𝑡

,

𝑉

𝑘

/2

𝑡

,

𝑉

𝑉

𝑡

,

𝑡

,

2𝑉

𝑉

𝑡

,

31

(17)

Model vs. Spice Data

For reasonable

input slope

Model matches

Spice very well

Model breaks with

very large t

r

Input looks “DC” –

traces out VTC

Have other problems here anyways

Short-circuit current

EECS241B L08 STANDARD CELLS 33

Signal Arrival Times

NAND gate:

1

(18)

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Signal Arrival Times

NAND gate:

1

EECS241B L08 STANDARD CELLS 35

Simultaneous Arrival Times

NAND gate:

EECS241B L08 STANDARD CELLS 36

35

(19)

Impact of Arrival Times

A

B

Delay

0

t

B

- t

A

A arrives early

B arrives early

Up to 25%

EECS241B L08 STANDARD CELLS 37

The edge can also advance in the opposite transition

Not in models; add derating during design

Key Point

Timing of a cell is set by its load and input rise/fall time

Enables static delay computation

Circuits described as graphs

Timing as a graph solving problem

(20)

2/11/2021

20

2.M Standard Cell Library

39 EECS241B L08 STANDARD CELLS

Standard Cell

Library

Contains for each cell:

Functional information: cell = a *b * c

Timing information: function of

input slew

intrinsic delay

output capacitance

non-linear models used in tabular approach

Physical footprint (area)

Power characteristics

Noise senistivity

Wire-load models - function of

Block size

Fan-out

Library

K. Keutzer, EE244

EECS241B L08 STANDARD CELLS 40

39

(21)

Synopsys Delay Models

Linear (CMOS2) delay model

Similar to what we have studied so far

EECS241B L08 STANDARD CELLS 41

Example Cell Timing

From Synopsys training materials

(22)

2/11/2021

22

Cell Characterization (Linear Model)

EECS241B L08 STANDARD CELLS 43

Synopsys Nonlinear Delay Model (NLDM)

Delay is a function of:

EECS241B L08 STANDARD CELLS 44

43

(23)

ASAP7 (INVBUF)

cell_rise (delay_template_7x7_x1) { index_1 ("5, 10, 20, 40, 80, 160, 320"); index_2 ("5.76, 11.52, 23.04, 46.08, 92.16, 184.32, 368.64"); values ( \ "15.1096, 17.9627, 22.9385, 32.3432, 50.7722, 87.5491, 161.048", \ "16.5685, 19.4199, 24.4133, 33.79, 52.3068, 89.0219, 162.558", \ "19.524, 22.3608, 27.3353, 36.7508, 55.1933, 92.0112, 165.882", \ "24.7681, 27.6326, 32.6303, 42.0258, 60.5712, 97.4164, 170.874", \ "32.336, 35.3813, 40.5148, 49.9033, 68.3822, 105.175, 178.667", \ "42.3648, 45.7309, 51.1095, 60.6139, 79.0285, 115.701, 189.326", \ "55.156, 59.1939, 65.086, 74.8102, 93.0649, 129.979, 203.019" \ ); } rise_transition (delay_template_7x7_x1) { index_1 ("5, 10, 20, 40, 80, 160, 320"); index_2 ("5.76, 11.52, 23.04, 46.08, 92.16, 184.32, 368.64"); values ( \ "8.99752, 13.8369, 23.7312, 43.8335, 84.6028, 166.699, 333.184", \ "8.99926, 13.8598, 23.7484, 43.8239, 84.6112, 166.718, 332.823", \ "9.02142, 13.8578, 23.7, 43.8538, 84.556, 166.735, 330.605", \ "9.54922, 14.3096, 23.9855, 43.9203, 84.7136, 167.621, 331.058", \ "10.9996, 15.5611, 24.9797, 44.3711, 84.7556, 167.261, 330.939", \ "13.4332, 17.8353, 26.8038, 45.7193, 85.3774, 166.849, 332.805", \ "17.1196, 21.5314, 29.9817, 47.9893, 86.8572, 168.099, 330.889" \ ); }

EECS241B L08 STANDARD CELLS 45

Two-dimensional tables of

pre-characterized delays/transition times

as a function of input slope and output

capacitance

Synopsys Nonlinear Delay Model

Interpolates between characterization points

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2/11/2021

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Composite Current Source (CCS) Model

Synopsys

EECS241B L08 STANDARD CELLS 47

Driver model

Composite current source

(time and voltage dependent)

Receiver model

A set of capacitance models

Wire model

Interpolate

Matches both delay and rise/fall times

Next Lecture

Static timing

EECS241B L08 STANDARD CELLS 48

47

References

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