Planar
Magnetron
Sputtering
Sources
BENEFITS OF THE
STANDARD
“MAK” SPUTTER SOURCE
Only this unique Planar Magnetron can provide
ALL
these Advantages
•
Cathode and magnets are ISOLATED FROM WATER
•
Design requires only ONE vacuum seal
•
Supplied as either HV or UHV
•
NO water to Vacuum seal
•
Sputters MAGNETIC MATERIAL
•
Target requires NO CLAMPING or BONDING
to cathode
•
Operates in DC or RF power modes
•
Sputters from 0.5 - 600 mTorr Ar.
•
Adjustable anode, PREVENTS build up
and shadowing
THE COMPANY
US Inc., was established in 1976 and located in the heart of “Silicon Valley”. This location provides cooperative design, test, and thin film application for product advancements, with well known universities and national laboratories.
Since the early 1980’s exclusive licenses from two prominent “Silicon Valley” laboratories have been granted to US Inc., permitting the manufacture and distribution of patented Planar Magnetron Sputter Sources. With over 6,000 sources delivered throughout the world, US Inc. has become known world wide as a leading supplier of sputter deposition sources.
THE PRODUCT
The MAK source, US Inc.’s successor to the highly regarded US GUN, is produced at the company’s San Jose, California U.S.A. facility. Introduction of the MAK was in late 1995 and it’s rapid sales growth caused the discontinuation of the US GUN at the beginning of 1999. Designed to present the smallest profile possible, with higher rates than any comparable sputter sources available, MAK users have developed much of today’s thin film techniques.
TABLE OF CONTENTS
PAGE
Introduction . . . 2
MAK 1.3”. . . .3
MAK 2” . . . .4
MAK 3” . . . .5
MAK 4” . . . .6
MAK 6” . . . .7
MAK Multi Source . . . 8
Options . . . .9
Substrate Heater . . . 10
Planar Magnetron Sputtering . . . 11
US Inc., San Jose, CA U.S.A.
408-363-6909 • FX: 408-363-6996
INTRODUCTION
1.3” MAK
MAK Working distance
0 1" 1.5" 1" 1.5" A N G S T R O M S Working Distance Rate A/min Uniformity 2” Dia. 3” Dia. 2” 1750 ±7% ±20% 3” 975 ±5% ±12%
1.3” Diameter 0.185” Thick Cu Target 200 W. @ 5 mTorr
1.3” MAK TECHNICAL DATA PART # L130A01
Source Dimensions 1.3” MAK
Vertical Size 4.45”
Outside Diameter 1.50”
Mounting
Flange 3.375” CF (min) Feedthrough 0.75” Quick Coupler
Target Specifications
Target Diameter 1.3”
Target Thickness [MAX] 0.225”
Target Mounting Magnetic
Magnetic Materials Yes
Magnet Design Type Nd/Fe B Configuration Balanced Operation Specifications DC Max Power 350W RF Max Power 200W
Cathode Voltage (Volts) 200-1000V
Discharge Current (Max amps) 1.00 amp Operating Pressure (mtorr) 0.5-600
Cooling Water
Flow Rate 0.6 gpm
Conductivity No Requirement
1.3” MAK typical rates and uniformity performance
Part # L130A01 1180 1510 1750 1520 1195 760 885 975 890 720 4.45” ø2.325” ø0.75” 12.0” STANDARD (CUSTOM LENGTHS AVAILABLE) HN CONNECTOR INCHES 2” 3” 1.50” FIXED ANODE
US Inc. 408-363-6909 • www.us-incorp.com
MAK Working distance 0 1" 1.5" 1" 1.5" A N G S T R O M S
2” MAK
Working Distance Rate A/min Uniformity 2” Dia. 3” Dia. 2” 6200 ±6% ±16% 3” 2800 ±3% ±10%2” Diameter 0.250” Thick Cu Target 500 W. @ 5 mTorr
2” MAK TECHNICAL DATA PART # L200A01
Source Dimensions 2” MAK
Vertical Size 3.95”
Outside Diameter 2.33”
Mounting
Flange 3.375” CF (min) Feedthrough 0.75” Quick Coupler
Target Specifications
Target Diameter 2”
Target Thickness [MAX] 0.312”
Target Mounting Magnetic
Magnetic Materials Yes
Magnet Design Type Nd/Fe B Configuration Balanced/Unbalanced Operation Specifications DC Max Power 1000W RF Max Power 400W
Cathode Voltage (Volts) 200-1000V Discharge Current (Max amps) 3 amp Operating Pressure (mtorr) 0.5-600
Cooling Water
Flow Rate 0.8 gpm
Conductivity No Requirement
2” MAK typical rates and uniformity performance
4445 5550 6200 5580 4475 2295 2620 2800 2630 2270 INCHES Part # L200A01 ø2.33” 3.91” ø0.75” 12.0” STANDARD (CUSTOM LENGTHS AVAILABLE) ø1.50” ANODE HEIGHT ADJUSTABLE TO TARGET THICKNESS HN CONNECTOR 2” 3”
US Inc. 408-363-6909 • www.us-incorp.com
3” MAK
MAK Working distance
0 1" 2" 1" 2" A N G S T R O M S Working Distance Rate A/min Uniformity 2” Dia. 4” Dia. 3” 10,000 ±5% ±15% 4” 5600 ±3% ±10%
3” Diameter 0.500” Thick Cu Target 1000 W. @ 5 mTorr
3” MAK TECHNICAL DATA PART # L300A01
Source Dimensions 3” MAK
Vertical Size 4.35”
Outside Diameter 3.38”
Mounting
Flange 6” CF (min) Feedthrough 0.75” Quick Coupler
Target Specifications
Target Diameter 3”
Target Thickness [MAX] 0.625”
Target Mounting Magnetic
Magnetic Materials Yes
Magnet Design Type Nd/Fe B Configuration Balanced/Unbalanced Operation Specifications DC Max Power 2000W RF Max Power 750W
Cathode Voltage (Volts) 200-1000V Discharge Current (Max amps) 5 amp Operating Pressure (mtorr) 0.5-600
Cooling Water
Flow Rate 0.8 gpm
Conductivity No Requirement
3” MAK typical rates and uniformity performance
7300 9100 10,000 9135 7320 4650 5230 5600 5210 4620 INCHES Part # L300A01-CF 3.38” 4.35” ø2.25” ø0.75” 12.0” STANDARD (CUSTOM LENGTHS AVAILABLE) HN CONNECTOR ANODE HEIGHT ADJUSTABLE TO TARGET THICKNESS 3” 4”
US Inc. 408-363-6909 • www.us-incorp.com
4” MAK
MAK Working distance
0 1.5" 2" 1.5" 2" A N G S T R O M S Working Distance Rate A/min Uniformity 3” Dia. 4” Dia. 4” 6480 ±5% ±7% 6” 2900 ±2% ±3%
4” Diameter 0.500” Thick Cu Target 2000 W. @ 5 mTorr
4” MAK TECHNICAL DATA PART # L400A01
Source Dimensions 4” MAK
Vertical Size 4.60”
Outside Diameter 4.45”
Mounting
Flange 8” CF (min) Feedthrough 0.75” Quick Coupler
Target Specifications
Target Diameter 4”
Target Thickness [MAX] 0.750”
Target Mounting Magnetic
Magnetic Materials Yes
Magnet Design Type Nd/Fe B Configuration Balanced/Unbalanced Operation Specifications DC Max Power 3000W RF Max Power 1200W
Cathode Voltage (Volts) 200-1000V Discharge Current (Max amps) 7 amp Operating Pressure (mtorr) 0.5-600
Cooling Water
Flow Rate 1.0 gpm
Conductivity No Requirement
4” MAK typical rates and uniformity performance
6070 6470 5840 6090 5830 2750 2780 2900 2780 2715 INCHES Part # L400A01 4.45” 4.60” ø0.75” ø2.25” ANODE HEIGHT ADJUSTABLE TO TARGET THICKNESS 12.0” STANDARD (CUSTOM LENGTHS AVAILABLE) HN CONNECTOR 4” 6”
US Inc. 408-363-6909 • www.us-incorp.com
MAK Working distance 0 2" 3" 2" 3" A N G S T R O M S
6” MAK
Working Distance Rate A/min Uniformity 4” Dia. 6” Dia. 4” 13,000 ±4% ±12% 6” 5800 ±2% ±7%6” Diameter 0.500” Thick Cu Target 3000 W. @ 5 mTorr
6” MAK TECHNICAL DATA PART # L600A01
Source Dimensions 6” MAK
Vertical Size 6.75”
Outside Diameter 6.55”
Mounting
Flange 10” CF (min) Feedthrough 1.250” Quick Coupler
Target Specifications
Target Diameter 6”
Target Thickness [MAX] 1.00”
Target Mounting Magnetic
Magnetic Materials Yes
Magnet Design Type Nd/Fe B Configuration Balanced/Unbalanced Operation Specifications DC Max Power 6000W RF Max Power 2000W
Cathode Voltage (Volts) 200-1000V Discharge Current (Max amps) 10 amp Operating Pressure (mtorr) 0.5-600
Cooling Water
Flow Rate 2.0 gpm
Conductivity No Requirement
6” MAK typical rates and uniformity performance
10,225 12,200 12,900 12,180 10,150 5000 5500 5800 5520 5050 Part # L600A01 INCHES 4” 6” ANODE HEIGHT ADJUSTABLE TO TARGET THICKNESS 12.0” STANDARD (CUSTOM LENGTHS AVAILABLE) HN CONNECTOR 6.55” 6.75” ø1.25”
US Inc. 408-363-6909 • www.us-incorp.com
ø4.50”•
Provides simultaneous and/or sequential
deposition
•
Multi-Source assemblies in groups
of 3, 4, or 5
•
Available on 8” - 24” CF, ISO, or ANSI
•
Custom designs
•
Shutters, shielding and gas injection
available
DESIGN EXAMPLES
1.3” MAK GUN 3 PLCS CUT-AWAY AT GUN LOCATION 7.0” 13° CHAMBER REF.1 of 4 SHUTTERS IN OPEN POSITION ROTATED 49° TO OPEN RELATIVE TARGET/SHUTTER IN CLOSED POSITION C C 8.22” 6” FOCAL POINT 7.40”
3-1.3” MAKS ON 10” CF W/SHUTTERS
4-3” MAKS ON 16.5” CF W/SHUTTERS
MAK
MULTI SOURCE
US Inc. 408-363-6909 • www.us-incorp.com
ROTARY MOTION 3 PLCS 10” CFMAK FLEX MOUNT
The flex mount feedthru allows for angular adjustment to the MAK’s sputtering attitude. Use of a welded formed bellows and special support bracket, any angle from 0 to 30 degrees is firmly held in place. Power is applied thru a coaxial cable; thus assuring R.F continuity.
MAGNET ARRAY
PERFORMANCE ADAPTABILITY
The single piece cathode assembly permits change of the magnetic structure without disassembly of the MAK. Performance requirements from—excellent uniformity, with good target utilization to— high rates, with maximum target thickness is achieved. The magnetic array is field changeable.
MAGNETIC MATERIAL SPUTTERING
Direct attachment to the active cathode, without use of a magnetic housing, provides a small free space between target and magnets. This places a stronger magnetic flux at the target surface allowing sputtering of magnetic material as standard.
INSITU LINEAR MOTION
Provides target to substrate distance change without breaking vacuum. • Adaptable to 1.3” thru 4” MAK • 1-6” Linear Travel • Welded Bellows • Bakeable to 120°C • UHV Compatible Part # L200A01-FM
MAK OPTIONS
US Inc. 408-363-6909 • www.us-incorp.com
VIEW ROTATED 90° 6.20” 8.60” 12” STANDARD (CUSTOM LENGTHS AVAILABLE) ø0.75” 8” CF 0.750” QUICK COUPLE FOR SUPPORT ONLY 6” EXTENSION 2” MAK SOURCE BELLOWS 3.375” CF KEEPER MAGNETS TARGET ANODE CATHODE (COOLING SURFACE)SPECIFICATIONS
P/N SU200
P/N SU300
2” Heater 3” Heater
1. Maximum Temperature 950°C 950°C
2. Temperature Stability ±2% ±2%
3. Temperature Uniformity ±4°C ±8°C
(center circle diameter) 1.25” 2.25” 4. Maximum Voltage 60 volts 90 volts
5. Maximum Current 10 amps 9 amps
6. Heater Resistance 5 ohms 10 ohms
7. Power Supply AC/DC AC/DC
8. Ramp Time to 750°C 4 Min 5 Min.
9. Ramp Time to 950°C 12 Min. 13 Min.
10. Cool-down Time 35 Min. 45 Min.
(950° to room temp., 1 atm pressure)
11. UHV Compatibility Yes Yes
12. Electrical Biasing Yes Yes
ACCESSORIES
Deluxe Feedthru and Mounting Stand
• Adjustable Mounting Bracket with X, Y, Z Movement • Two (2) Type S Thermocouple Leads
• Two (2) Power Pins Mounted on a 23/
4”, 41/2” or 6” Rotatable CF Mounting Stand
• Adjustable Mounting Bracket with X, Y, Z Movement Mounted on a 23/
4”, 41/2” or 6” Rotatable CF 18 Inch Hook-Up Kit
• Type S Thermocouple 18” Leadwire w/Ceramics
• Two .050” OFHC Copper Power Leads 18” Long w/Ceramics
FEATURES
• Unprecedented temperature uniformity
• For use in sputtering, laser ablation, ion beam deposition, ECR, MOCVD and others
SUBSTRATE HEATERS
Part # SU-300
Part # SU400-C
4” NON-CONTACT HEATER
PLANAR MAGNETRON SPUTTERING
SPUTTERING
Sputtering is a method of depositing both thin metal films and insulators onto a substrate. Unlike evaporation, the material to be sputtered does not have to be heated. The deposition of alloys and insulators as composite materials are two important benefits of sputtering. Sputtering has additional benefits as a deposition technique when compared with evaporation.
PRINCIPLES OF SPUTTERING
Sputtering is a physical process that can be compared to throwing steel balls at a concrete wall. Upon impact, the ball tears away fragments of the concrete, resulting in fragments which retain the chemical and physical properties of concrete. If the process is continued, surfaces in the vicinity of the impact are covered with a layer of concrete dust. In sputtering, the “steel balls” are ionized atoms. The “wall” is a plate of the material to be sputtered, called a target.The sputtering process takes place in an evacuated chamber. Argon is introduced, then
ionized in the chamber which contains the substrate and the target of the film material to be sputtered. The target is maintained at a negative potential relative to the positively charged argon atom. The positive ion accelerates towards the negative charge, striking the target with sufficient force to remove material. The argon atom does not become imbedded in the target. It slams into it like a steel ball into the wall and tears off some of the target material. Since the chamber is maintained at a vacuum, the liberated material settles on everything in the chamber, mainly the substrates.
MAGNETRON SPUTTERING
In diode sputtering, not all of the electrons escaping the target contribute to the ionized plasma glow area. The wasted electrons fly around the chamber causing radiation and other problems, for example, the heating of the target. A magnetron sputtering source addresses the electron problem by placing magnets behind, and sometimes, at the sides of the target. These magnets capture the escaping electrons and confine them to the immediate vicinity of the target. The ion current (density of ionized argon atoms hitting the target) is increased by an order of magnitude over conventional diode sputtering systems, resulting in faster
deposition rates at lower pressure. The lower pressure in the chamber helps create a cleaner film. Target temperature is lower with magnetron sputtering enhancing the deposition of high quality films.
"B" Field "E" Field Growing Film Material Removed By Ion Bombardment Captured Electrons Magnetic Field Lines Target(Cathode) Negative High Voltage Legend Ions Electrons Target Atoms Argon Atoms
