Blocking Maximum rated values 1) Parameter Symbol Conditions Value Unit. f = 50 Hz, t p = 10 ms, T vj = C f = 5 Hz, t p = 10 ms,

(1)

Rectifier Diode

5SDD 60N2800

I

F(AV)M

=

6830 A

I

_F(RMS)

=

10730 A

I

FSM

=

87×10

3

A

V

F0

=

0.8 V

r

_F

=

0.05 m

W

Doc. No. 5SYA1155-02 Apr. 13

· Patented free-floating silicon technology

· Very low on-state losses

· Optimum power handling capability

Blocking

Maximum rated values1)

Parameter Symbol Conditions Value Unit

Max repetitive peak reverse voltage VRRM

f = 50 Hz, tp= 10 ms,

Tvj = 0…160 °C

2000 V

Max non-repetitive peak reverse

voltage VRSM

f = 5 Hz, tp = 10 ms,

Tvj = 0…160 °C 2800 V

Characteristic values

Parameter Symbol Conditions min typ max Unit

Reverse leakage current IRRM VRRM, Tvj = 160 °C 400 mA

Mechanical data

Mounting force FM 81 90 108 kN

Acceleration a Device unclamped 50 m/s2

Acceleration a Device clamped 100 m/s2

Weight m 2.8 kg

Housing thickness H FM = 90 kN, Ta = 25 °C 34.3 35 mm

(2)

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA1155-02 Apr. 13 page 2 of 6

On-state

Average on-state current IF(AV)M 50 Hz, Half sine wave, TC = 90 °C 6830 A

RMS on-state current IF(RMS) 10730 A

Peak non-repetitive surge

current IFSM

tp = 10 ms, Tvj = 160 °C,

sine half wave, VR = 0 V, after surge

87×103 A

Limiting load integral I2t 38.5×106 A2s

Peak non-repetitive surge

current IFSM

tp = 10 ms, Tvj = 160 °C,

sine half wave,

VR = 0.6*VRRM, after surge

A

Limiting load integral I2t A2s

On-state voltage VF IF = 5000 A, Tvj = 160 °C 1.05 V Threshold voltage VF0 _T_vj_{= 160 °C} IT = 2500...7500 A 0.8 V Slope resistance rF 0.05 mW

Switching

Reverse recovery charge Qrr _di_F_{/dt = -10 A/µs, V}_R_{= 200 V}

IF = 4000 A, Tvj = 160 °C

4400 6300 µAs

(3)

Thermal

Maximum rated values 1)

Operating junction

temperature range Tvj 0 160 °C

Storage temperature range Tstg -40 150 °C

Thermal resistance junction to case Rth(j-c) Double-side cooled Fm = 81...108 kN 5.7 K/kW Rth(j-c)A Anode-side cooled Fm = 81...108 kN 11.4 K/kW Rth(j-c)C Cathode-side cooled Fm = 81...108 kN 11.4 K/kW

Thermal resistance case to

heatsink Rth(c-h) Double-side cooled Fm = 81...108 kN 1 K/kW Rth(c-h) Single-side cooled Fm = 81...108 kN 2 K/kW

Analytical function for transient thermal impedance:

)

e

-(1

R

=

(t)

Z

n

1 i

t/

-i

th

c)

-th(j

å

=

i

t

i 1 2 3 4 Rth i(K/kW) 3.731 1.250 0.434 0.292 ti(s) 0.8113 0.1014 0.0089 0.0015

Fig. 1 Transient thermal impedance

(4)

Doc. No. 5SYA1155-02 Apr. 13 page 4 of 6

Fig. 2 On-state voltage characteristics Fig. 3 On-state voltage characteristics

Fig. 4 On-state power dissipation vs. mean on-state

current

Fig. 5 Max. permissible case temperature vs. mean

on-state current

(5)

Fig. 6 Reverse recovery charge vs. decay rate of