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Two stage model of nanocone formation on a surface of elementary semiconductors by laser radiation

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Figure

Figure 1 AFM image of irradiated semiconductor surfaces. 3D AFM image of Ge surface irradiated by Nd:YAG laser at intensity of 7.0 MW/cm2.
Figure 3 Current-voltage characteristics of Ge samples. Current-voltage characteristics of a non-irradiated and an irradiated i-Gesample by Nd:YAG laser with different intensities at λ = 266 nm and350 laser pulses.
Figure 4 Rectification ratio for p-n junctions formed by different laser parameters. Rectification ratio as a function of irradiation intensity ofNd:YAG laser for different wavelengths of the laser radiation and 350 laser pulses.

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