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Annealing of CoFeB/MgO based single and double barrier magnetic tunnel junctions: Tunnel magnetoresistance, bias dependence, and output voltage

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Figure

FIG. 1. Schematic illustration of MgO barrier growth using a TFT gun.
FIG. 3. Room temperature TMR and magnetization curves for ��a� and �c�� SMTJs and ��b� and �d�� DMTJs after annealing at 350 °C for 1 h.
FIG. 5. Electron micrographs from the barrier region of DMTJs �a� asdeposited and �b� after annealing at 350 °C.
FIG. 7. �Color online� �a� Normalized TMR vs bias voltage curves forDMTJs annealed at different temperatures and �b� a close-up clearly show-ing a shift of the curve away from zero bias for low annealing temperatures.
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