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Evaluation of SiC Schottky diodes using pressure contacts

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Figure

Fig. 1. Current distribution for two paralleled diodes with different
Fig. 5. Test vehicle used for analyzing the stresses on the solder. (a)
Fig. 7. Von Mises stress distribution on the solder layer using acopper substrate for Si and SiC chips
Fig. 12: Static thermal network of the press-pack diode for doubleside cooling, where the thermal path for single side cooling is identified
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