Power MOSFET FEATURES. IRF610PbF SiHF610-E3 IRF610 SiHF610. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 200 V Gate-Source Voltage V GS ± 20

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Power MOSFET

IRF610, SiHF610

Vishay Siliconix

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. VDD = 50 V, starting TJ = 25 °C, L = 8.8 mH, Rg = 25 , IAS = 3.3 A (see fig. 12).

c. ISD  3.3 A, dI/dt  70 A/μs, VDD  VDS, TJ  150 °C.

d. 1.6 mm from case.

PRODUCT SUMMARY

VDS (V) 200

R_DS(on) () V_GS = 10 V 1.5

Qg (Max.) (nC) 8.2

Qgs (nC) 1.8

Qgd (nC) 4.5

Configuration Single

N-Channel MOSFET G

D

S TO-220AB

GDS

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package TO-220AB

Lead (Pb)-free IRF610PbF

SiHF610-E3

SnPb IRF610

SiHF610

ABSOLUTE MAXIMUM RATINGS (T

_C

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage VDS 200

Gate-Source Voltage VGS ± 20 V

Continuous Drain Current V_GS at 10 V TC = 25 °C

I_D 3.3

A

TC = 100 °C 2.1

Pulsed Drain Current^a IDM 10

Linear Derating Factor 0.29 W/°C

Single Pulse Avalanche Energy^b E_AS 64 mJ

Repetitive Avalanche Current^a I_AR 3.3 A

Repetitive Avalanche Energy^a EAR 3.6 mJ

Maximum Power Dissipation TC = 25 °C PD 36 W

Peak Diode Recovery dV/dt^c dV/dt 5.0 V/ns

Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 Soldering Recommendations (Peak Temperature) for 10 s 300^d °C

Mounting Torque 6-32 or M3 screw 10 lbf · in

1.1 N · m

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IRF610, SiHF610

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R_thJA - 62

°C/W

Case-to-Sink, Flat, Greased Surface RthCS 0.50 -

Maximum Junction-to-Case (Drain) RthJC - 3.5

SPECIFICATIONS (T

J

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 200 - - V VDS Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.30 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V

Gate-Source Leakage I_GSS V_GS = ± 20 V - - ± 100 nA

Zero Gate Voltage Drain Current I_DSS VDS = 200 V, VGS = 0 V - - 25

μA VDS = 160 V, VGS = 0 V, TJ = 125 °C - - 250 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 2.0 A^b - - 1.5 

Forward Transconductance g_fs V_DS = 50 V, I_D = 2.0 A^b 0.8 - - S

Dynamic

Input Capacitance Ciss

VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5

- 140 -

pF

Output Capacitance Coss - 53 -

Reverse Transfer Capacitance C_rss - 15 -

Total Gate Charge Qg

VGS = 10 V I_D = 3.3 A, V_DS = 160 V, see fig. 6 and 13^b

- - 8.2

nC

Gate-Source Charge Qgs - - 1.8

Gate-Drain Charge Qgd - - 4.5

Turn-On Delay Time t_d(on)

VDD = 100 V, ID = 3.3 A, Rg = 24 , RD = 30, see fig. 10^b

- 8.2 -

Rise Time tr - 17 - ns

Turn-Off Delay Time td(off) - 14 -

Fall Time t_f - 8.9 -

Internal Drain Inductance LD Between lead, 6 mm (0.25") from package and center of die contact

- 4.5 -

nH

Internal Source Inductance LS - 7.5 -

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode

- - 3.3

A

Pulsed Diode Forward Current^a ISM - - 10

Body Diode Voltage VSD T = 25 °C, I = 3.3 A, V = 0 V^b - - 2.0 V

D

S G

S D

G

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IRF610, SiHF610

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics, TC = 25 °C

Fig. 2 - Typical Output Characteristics, TC = 150 °C

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

91023_01

20 µs Pulse Width T_C = 25 °C

4.5 V

V

_DS

, Drain-to-Source Voltage (V) I

D

, Dr ain Current (A)

10⁰ 10¹

10¹

10⁰

10^-1

10^-1 Bottom Top

V_GS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V 4.5 V

10⁰

10^-1

10⁰ 10¹

V

_DS,

Drain-to-Source Voltage (V) I

D

, Dr ain Current (A)

4.5 V Bottom

Top V_GS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V 4.5 V

20 µs Pulse Width T_C = 150 °C

91023_02

10^-1

20 µs Pulse Width V_DS = 50 V 10⁰

10^-1

I

D

, Dr ain Current (A)

V

_GS,

Gate-to-Source Voltage (V)

5 6 7 8 9 10

4

91023_03

10^-2

I_D= 3.3 A V_GS= 10 V 3.5

0.0 1.0 1.5 2.0 2.5 3.0

T

_J,

Junction Temperature (°C) R

DS(on)

, Dr ain-to-Source On Resistance (Nor maliz ed)

91023_04

- 60 - 40 - 20 0 20 40 60 80 100 120 140 160 0.5

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IRF610, SiHF610

Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 8 - Maximum Safe Operating Area

91023_05

300

250

200

150

0 100

10⁰ 10¹

Capacitance (pF)

V

_DS,

Drain-to-Source Voltage (V)

V_GS= 0 V, f = 1 MHz C_iss = C_gs + C_gd, C_ds Shorted C_rss = C_gd

C_oss = C_ds + C_gd

C_iss

C_rss C_oss

50

91023_06

Q

_G

, Total Gate Charge (nC)

V

GS

, Gate-to-Source V o ltage (V)

20

16

12

8

0 4

0 2 4 6 8

I_D = 3.3 A

For test circuit see figure 13

10 V_DS = 40 V

V_DS = 100 V V_DS = 160 V

91023_07

10¹

10⁰

10^-1

25

°

C 150

°

C

0.4 0.8 1.2 1.6 2.0

V_GS= 0 V

V

_SD

, Source-to-Drain Voltage (V) I

SD

, Re v erse Dr ain Current (A)

100 µs

1 ms 10 ms Operation in this area limited

by R_DS(on)

V

_DS

, Drain-to-Source Voltage (V) I

D

, Dr ain Current (A)

T_C = 25 °C T_J = 150 °C Single Pulse 10^-2

10²

0.1

2 5

0.1

2 5

1

2 5

10

2 5

1 ² ⁵ 10 ² ⁵10² ² ⁵ 10³

91023_08

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IRF610, SiHF610

Vishay Siliconix

Fig. 9 - Maximum Drain Current vs. Case Temperature

Fig. 10a - Switching Time Test Circuit

Fig. 10b - Switching Time Waveforms

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

I

D

, Dr ain Current (A)

T

_C

, Case Temperature (°C)

0.0

1.0 2.0 3.0 4.0

25 50 75 100 125 150

91023_09

Pulse width ≤ 1 µs Duty factor ≤ 0.1 %

R_D

V_GS R_G

D.U.T.

10 V

+- V_DS

V_DD

V_DS 90 %

10 % V_GS

t_d(on) t_r t_d(off) t_f

10

1

0.1

10^-2

10^-5 10^-4 10^-3 10^-2 0.1 1 10

P_DM

t₁ t₂

t

₁

, Rectangular Pulse Duration (s) Ther mal Response (Z

thJC

)

Notes:

1. Duty Factor, D = t₁/t₂ 2. Peak T_j = P_DM x Z_thJC + T_C Single Pulse

(Thermal Response) 0 − 0.5

0.2 0.1 0.05 0.02 0.01

91023_11

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IRF610, SiHF610

Vishay Siliconix

Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms

Fig. 12c - Maximum Avalanche Energy vs. Drain Current R_G

I_AS 0.01 Ω t_p

D.U.T L V_DS

+ -V_DD 10 V

Vary t_p to obtain required I_AS

I_AS V_DS

V_DD V_DS t_p

140

0 40 60 80 100 120

25 50 75 100 125 150

Starting T_J, Junction Temperature (°C)

E

AS

, Single Pulse Energy (mJ)

Bottom Top

I_D 1.5 A 2.1 A 3.3 A

V_DD = 50 V

91023_12c

20

Q_GS Q_GD Q_G

V

_G 10 V

D.U.T.

V_GS

V_DS

0.3 µF 0.2 µF

50 kΩ 12 V

Current regulator Same type as D.U.T.

+ -

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IRF610, SiHF610

Vishay Siliconix

Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

P.W. Period

dI/dt Diode recovery

dV/dt

Ripple ≤ 5 %

Body diode forward drop Re-applied

voltage Reverse recovery current

Body diode forward current

V_GS= 10 V^a

I_SD Driver gate drive

D.U.T. l_SD waveform

D.U.T. V_DS waveform

Inductor current

D = P.W.

Period

+ - +

+

+ - -

-

Peak Diode Recovery dV/dt Test Circuit

V_DD

• dV/dt controlled by Rg

• Driver same type as D.U.T.

• I_SDcontrolled by duty factor “D”

• D.U.T. - device under test D.U.T. Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance current transformer

R_g

Note

a. V_GS = 5 V for logic level devices

V_DD

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Package Information

www.vishay.com Vishay Siliconix

TO-220-1

Note

• M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM

M^* 2 3

1

L L(1)

D H(1) Q

Ø P

A F

J(1) b(1)

e(1) e E

b

C

DIM. MILLIMETERS INCHES

MIN. MAX. MIN. MAX.

A 4.24 4.65 0.167 0.183

b 0.69 1.02 0.027 0.040

b(1) 1.14 1.78 0.045 0.070

c 0.36 0.61 0.014 0.024

D 14.33 15.85 0.564 0.624

E 9.96 10.52 0.392 0.414

e 2.41 2.67 0.095 0.105

e(1) 4.88 5.28 0.192 0.208

F 1.14 1.40 0.045 0.055

H(1) 6.10 6.71 0.240 0.264

J(1) 2.41 2.92 0.095 0.115

L 13.36 14.40 0.526 0.567

L(1) 3.33 4.04 0.131 0.159

Ø P 3.53 3.94 0.139 0.155

Q 2.54 3.00 0.100 0.118

ECN: X15-0364-Rev. C, 14-Dec-15 DWG: 6031

Package Picture

ASE Xi’an

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Disclaimer



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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.

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