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The effect of oxide precipitates on minority carrier lifetime in n type silicon

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Figure

FIG. 1. (a) Initial interstitial oxygen concentration before annealing, [Oi],versus interstitial oxygen loss upon annealing D[Oi]
FIG. 3. Minority carrier lifetime in a 720 lple with a phosphorus doping level of 7m thick n-type Cz-Si control sam- � 1013 cm�3 which was not annealedbut underwent the same cleaning and silicon nitride surface passivationprocesses at the oxide precipitate
FIG. 4. Measured minority carrier lifetime (smeasured), residual lifetimeaccording to Equation (1) (sresdiual), and the residual lifetime empirically cor-rected for surface recombination using the data in Figure 3 (sresidualþsurface) fortwo n-type Cz-Si samples with a phosphorus doping level of 3 � 1013 cm�3containing oxide precipitates produced by Process A.
FIG. 7. Residual lifetime in two samples with a doping level of 3 � 1013 cm�3which have a similar density of strained oxide precipitates arrived at by verydifferent processes
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