C Soldering Temperature, for 10 seconds 300 (1.6mm from case )

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IRF5305S/L

HEXFET

®

Power MOSFET

l

Advanced Process Technology

l

Surface Mount (IRF5305S)

l

Low-profile through-hole (IRF5305L)

l

175°C Operating Temperature

l

Fast Switching

l

P-Channel

l

Fully Avalanche Rated

S D

G

Absolute Maximum Ratings

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2_{Pak is a surface mount power package capable of} accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2_{Pak is suitable for high current applications because of} its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF5305L) is available for low-profile applications.

Description

V

DSS

= -55V

R

DS(on)

= 0.06Ω

I

D

= -31A

2 D P ak T O -26 2

Parameter Typ. Max. Units

RθJC Junction-to-Case ––– 1.4

R_θJA Junction-to-Ambient ( PCB Mounted,steady-state)** ––– 40

Thermal Resistance

°C/W

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -31

ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -22 A

IDM Pulsed Drain Current -110

PD @TA = 25°C Power Dissipation 3.8 W

PD @TC = 25°C Power Dissipation 110 W

Linear Derating Factor 0.71 W/°C

VGS Gate-to-Source Voltage ± 20 V

EAS Single Pulse Avalanche Energy 280 mJ

IAR Avalanche Current -16 A

EAR Repetitive Avalanche Energy 11 mJ

dv/dt Peak Diode Recovery dv/dt -5.8 V/ns

TJ Operating Junction and -55 to + 175

TSTG Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )

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VDD = -25V, Starting TJ = 25°C, L = 2.1mH RG = 25Ω, IAS = -16A. (See Figure 12)

Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 )

Notes:

** When mounted on 1" square PCB (FR-4 or G-10 Material ).

For recommended footprint and soldering techniques refer to application note #AN-994.

ISD ≤ -16A, di/dt ≤ -280A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C

Pulse width ≤ 300µs; duty cycle ≤ 2%.

Uses IRF5305 data and test conditions

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage -55 ––– ––– V VGS = 0V, ID = -250µA

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.034 ––– V/°C Reference to 25°C, ID = -1mA

RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.06 Ω VGS = -10V, ID = -16A

VGS(th) Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA

gfs Forward Transconductance 8.0 ––– ––– S VDS = -25V, ID = -16A

––– ––– -25

µ A VDS = -55V, VGS = 0V

––– ––– -250 VDS = -44V, VGS = 0V, TJ = 150°C

Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V

Gate-to-Source Reverse Leakage ––– ––– -100 n A VGS = -20V

Qg Total Gate Charge ––– ––– 63 ID = -16A

Qgs Gate-to-Source Charge ––– ––– 13 nC VDS = -44V

Qgd Gate-to-Drain ("Miller") Charge ––– ––– 29 VGS = -10V, See Fig. 6 and 13

td(on) Turn-On Delay Time ––– 14 ––– VDD = -28V

tr Rise Time ––– 66 ––– ID = -16A

td(off) Turn-Off Delay Time ––– 39 ––– RG = 6.8Ω

tf Fall Time ––– 63 ––– RD = 1.6Ω, See Fig. 10

Between lead,

––– –––

and center of die contact

Ciss Input Capacitance ––– 1200 ––– VGS = 0V

Coss Output Capacitance ––– 520 ––– pF VDS = -25V

Crss Reverse Transfer Capacitance ––– 250 ––– ƒ = 1.0MHz, See Fig. 5

Electrical Characteristics @ T

_J

= 25°C (unless otherwise specified)

IGSS

ns IDSS Drain-to-Source Leakage Current

nH 7.5

LS Internal Source Inductance

Parameter Min. Typ. Max. Units Conditions

IS Continuous Source Current MOSFET symbol

(Body Diode) ––– ––– showing the

ISM Pulsed Source Current integral reverse

(Body Diode) ––– ––– p-n junction diode.

VSD Diode Forward Voltage ––– ––– -1.3 V TJ = 25°C, IS = -16A, VGS = 0V

trr Reverse Recovery Time ––– 71 110 ns TJ = 25°C, IF = -16A

Qrr Reverse Recovery Charge ––– 170 250 nC di/dt = -100A/µs

ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) A S D G -31 -110

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Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

1 1 0 1 0 0 1 0 0 0 0 . 1 1 1 0 1 0 0 D D S 20 µ s P U L S E W ID T H T = 25 °Cc _A -I , D ra in -t o -S o u rc e C u rre n t (A )

-V , D rain-to-S o urce V oltage (V )

VGS TOP - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V -4 .5V 1 1 0 1 0 0 1 0 0 0 0.1 1 1 0 1 0 0 D D S A -I , D ra in -t o -S o u rc e C u rre n t (A )

-V , D rain-to-S ource V oltage (V )

VGS TOP - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V -4 .5 V 20 µ s P U L S E W ID T H T = 17 5°CC 1 1 0 1 0 0 4 5 6 7 8 9 1 0 T = 2 5°CJ T = 17 5 °CJ A V = -2 5 V 2 0µ s P U L S E W ID TH DS G S

-V , G ate -to-S ource V olta ge (V )

D -I , D ra in -t o -S o u rc e C u rre n t (A ) 0 . 0 0 . 5 1 . 0 1 . 5 2 . 0 - 6 0 - 4 0 - 2 0 0 2 0 4 0 6 0 8 0 1 0 0 1 2 0 1 4 0 1 6 0 1 8 0 J

T , J unc tion T em perature (°C )

R , D ra in -to -S o u rc e O n R e s is ta n c e DS (o n ) (N or m a liz ed) A I = -2 7A V = -1 0V D G S

Fig 2. Typical Output Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

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Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

0 5 0 0 1 0 0 0 1 5 0 0 2 0 0 0 2 5 0 0 1 1 0 1 0 0 C , C a p a c it anc e ( p F ) A V = 0V , f = 1 M H z C = C + C , C S H O R TE D C = C C = C + C G S iss g s g d d s rs s g d o ss ds g d C is s C os s C rs s D S

-V , D rain-to -S o urc e V oltag e (V )

0 4 8 1 2 1 6 2 0 0 1 0 2 0 3 0 4 0 5 0 6 0

Q , T otal G ate C harge (nC )_G

A F O R TE S T C IR C U IT S E E F IG U R E 1 3 V = -4 4V V = -2 8V I = -16 A GS -V , G a te -t o -S o u rc e V o lt a g e ( V ) D D S D S 1 0 1 0 0 1 0 0 0 0 . 4 0 . 8 1 . 2 1 . 6 2 . 0 T = 2 5°CJ V = 0 V G S S D SD A -I , R e v e rs e D ra in C u rre n t (A )

-V , S o urc e -to -D rain V o lta g e (V ) T = 17 5 °C_J 1 1 0 1 0 0 1 0 0 0 1 1 0 1 0 0 O P E R A T IO N IN T H IS A R E A L IM ITE D B Y RD S (o n) 1 0 0 µ s 1 m s 1 0 m s A T = 25 °C T = 17 5°C S ing le P u ls e C J D S

-V , D rain-to-S ourc e V oltage (V )

D -I , D ra in C u rre n t (A )

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Fig 10a. Switching Time Test Circuit

Fig 10b. Switching Time Waveforms

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current Vs.

Case Temperature

VDS -10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % RD VGS VDD RG D.U.T. V_DS 90% 10% V_GS td(on) tr td(off) tf + -25 50 75 100 125 150 175 0 5 10 15 20 25 30 35 T , Case Temperature ( C)

-I , Drain Current (A)

° C D 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 Notes: 1. Duty factor D = t / t 2. Peak T = P x Z + T 1 2 J DM thJC C P t t DM 1 2

t , Rectangular Pulse Duration (sec)

Thermal Response (Z ) 1 thJC 0.01 0.02 0.05 0.10 0.20 D = 0.50 SINGLE PULSE (THERMAL RESPONSE)

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Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Q_G Q_GS Q_GD V_G Charge

-10V

D.U.T. VDS I_D I_G -3mA VGS .3µF 50KΩ .2µF 12V Current Regulator Same Type as D.U.T.

Current Sampling Resistors

+

-Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

tp V(BR)DSS I_{A S} R G IA S 0 .0 1Ω tp D .U .T L V_{D S} VD D D R IV E R A 1 5 V -2 0 V 0 1 0 0 2 0 0 3 0 0 4 0 0 5 0 0 6 0 0 7 0 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 1 7 5 J E , S in g le P u ls e A v a la n c h e E n e rg y ( m J ) AS A

S tarting T , J unc tion T em perature (°C ) V = -2 5V I T O P -6 .6A -1 1A B O T TO M -16 A D D D

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Peak Diode Recovery dv/dt Test Circuit

P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5%

Body Diode Forward Drop Re-Applied

Voltage Reverse Recovery Current

Body Diode Forward Current

V_GS=10V

V_DD

ISD

Driver Gate Drive

D.U.T. I_SDWaveform D.U.T. V_DSWaveform Inductor Curent D = P.W. Period + -+ + + - RG VDD • dv/dt controlled by RG

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test D.U.T

*

Circuit Layout Considerations_•_{Low Stray Inductance}

• Ground Plane

• Low Leakage Inductance Current Transformer

*

Reverse Polarity of D.U.T for P-Channel VGS

[ ]

***

VGS = 5.0V for Logic Level and 3V Drive Devices

[ ] ***

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D

2 Pak Package Outline

D2_Pak

Part Marking Information

1 0.16 (.4 00 ) RE F . 6.47 (.2 55 ) 6.18 (.2 43 ) 2.61 (.1 03 ) 2.32 (.0 91 ) 8.8 9 (.3 50 ) R E F . B -1.3 2 (.05 2) 1.2 2 (.04 8) 2.7 9 (.110 ) 2.2 9 (.090 ) 1.3 9 (.0 5 5) 1.1 4 (.0 4 5) 5 .28 (.20 8) 4 .78 (.18 8) 4.69 (.1 85) 4.20 (.1 65) 1 0.54 (.4 15) 1 0.29 (.4 05) A -2 1 3 15 .4 9 (.6 10) 14 .7 3 (.5 80) 3 X 0 .93 (.03 7 ) 0 .69 (.02 7 ) 5 .08 (.20 0) 3X1.40 (.0 55) 1.14 (.0 45) 1.7 8 (.07 0) 1.2 7 (.05 0) 1.4 0 (.055 ) M AX. NO TE S: 1 D IM EN S IO N S A F T ER SO L D ER D IP. 2 D IM EN S IO N IN G & T O LE RA N C IN G PE R A N S I Y1 4.5M , 198 2. 3 C O N T RO L LIN G D IM EN SIO N : IN C H . 4 H E AT SINK & L EA D D IM EN S IO N S D O N O T IN C LU D E B UR R S. 0.5 5 (.022 ) 0.4 6 (.018 ) 0 .25 (.01 0 ) M B A M M IN IM U M R E CO M M E ND E D F O O TP R IN T 1 1.43 (.4 50 ) 8.89 (.3 50 ) 17 .78 (.70 0) 3 .8 1 (.15 0) 2 .08 (.08 2) 2X LE A D A SS IG N M E N TS 1 - G A TE 2 - D R AIN 3 - S O U RC E 2.5 4 (.100 ) 2 X

P A R T N U M B E R

IN TE R N A TIO N A L

R E C T IF IE R

L O G O

D A T E C O D E

(Y YW W )

YY = Y E A R

W W = W E E K

A S S E M B L Y

L O T C O D E

F 5 3 0 S

9 B 1 M

9 24 6

A

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Package Outline

TO-262 Outline

TO-262

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Tape & Reel Information

D2_Pak 3 4 4 TR R F E E D D IRE C TIO N 1 .8 5 ( .0 7 3 ) 1 .6 5 ( .0 6 5 ) 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4 .1 0 ( .1 6 1 ) 3 .9 0 ( .1 5 3 ) TR L F E E D D IRE CTIO N 10 .9 0 (.42 9) 10 .7 0 (.42 1) 16 .10 (.63 4 ) 15 .90 (.62 6 ) 1 .75 (.06 9 ) 1 .25 (.04 9 ) 1 1 .6 0 (.4 5 7 ) 1 1 .4 0 (.4 4 9 ) 1 5 .4 2 (.6 0 9 ) 1 5 .2 2 (.6 0 1 ) 4 .7 2 (.1 3 6) 4 .5 2 (.1 7 8) 2 4 .3 0 (.9 5 7 ) 2 3 .9 0 (.9 4 1 ) 0 .3 68 (.0 1 4 5 ) 0 .3 42 (.0 1 3 5 ) 1 .60 (.06 3) 1 .50 (.05 9) 13.50 (.532 ) 12.80 (.504 ) 33 0.00 (1 4.1 73) M A X . 2 7.4 0 ( 1.079) 2 3.9 0 ( .9 41) 60.00 (2.3 62) M IN . 3 0.40 (1.1 97) M A X . 26 .40 ( 1.03 9) 24 .40 ( .961 ) N O T E S : 1. C O M F O R M S TO E IA -4 18. 2. C O N TR O LLIN G D IM E N S IO N : M ILL IM ET ER . 3. D IM E N S IO N M E A S U R E D @ H U B . 4. IN C LU D E S F LA N G E D IS TO R T IO N @ O U T E R E D G E .

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 4/99

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