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Optical tuning of the charge carrier type in the topological regime of InAs/GaSb quantum wells

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Figure

FIG. 1. (a) Scanning electron microscopy image of the full
FIG. 3. Charge carrier densities [in (a)] and mobilities [in (b)]
FIG. 4. (a) Illumination time (�tof the longitudinal resistance is obtained at about 100 s.is determined to beand the light absorption and accumulation processes involved

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