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A Novel High Performance of GaN Based HEMT with Two Channel Layers of GaN/InAlGaN

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Figure

Figure 1. Schematic cross section of (a) AlGaN/GaN; (b) AlGaN/InGaN and (c) GaN-based HEMT with two channel layers of GaN/InAlGaN
Figure 2. The Potential of GaN-based HEMT with two channel layers of GaN/InAlGaN in the channel below at gate voltage of zero
Table 1. The structure parameters of InAlGaN layer with various mole fraction including polarization charge, band gap, conduction band and critical electric field
Figure 6. The comparison of transconductane values between GaN-based HEMT with two channel layers of GaN/InAlGaN and of AlGaN/GaN HEMT
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