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Epitaxial Growth of Room Temperature Ferrimagnetic Semiconductor Thin Films Based on Fe3O4 Fe2TiO4 Solid Solution

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Figure

Fig. 1(a) XRD 2�=! scans of thin films grown under varied oxygen pressure at 600�C. Inset shows the rocking curve of 222 reflection in the Fe3O4-Fe2TiO4solid solution thin films grown under 1:0 � 10�5 Pa and at 600�C.: Fe3O4-Fe2TiO4 solid solution,: FeTiO3-Fe
Fig. 3Temperature dependence of magnetization, M, for the solid solutionthin film measured under field-cooling condition at H ¼ 0:85 T
Fig. 5, �H exhibits a behavior similar to that of out-of-plane

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