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Improving the emission efficiency of MBE grown GaN/AlN QDs by strain control

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Academic year: 2020

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Figure

Figure 1 Schematics of the (a) conventional and (b) proposed epitaxial structures of GaN/AlN QDs.
Figure 2 XRD reciprocal space mapping measurement result of a typical sample.
Figure 3 High-resolution cross-sectional TEM image of theGaN/AlN QDs.
Figure 7 Illustration of the effects of internal electric field and QD height on the GaN QDs.

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