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Deep Traps and Parasitic Effects in Al0 25Ga0 75N/GaN/SiC Heterostructures with Different Schottky Contact Surfaces

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Figure

Figure 1. Cross-sectional schematic of an (Ni/Au)/AlGaN/GaN/SiC struc-ture adopted for this work (not to scale)
Figure 2. C (V) characteristics, for (a) diode and (b) HEMT (1) and HEMT (2).
Figure 3. The temperature dependence of the Hysteresis area, for the three samples.

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