PRELIMINARY. Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )

IRFR/U024N

PRELIMINARY

HEXFET

Power MOSFET

S D

G

Parameter Typ. Max. Units

R_θJC Junction-to-Case ––– 3.3

R_θJA Case-to-Ambient (PCB mount)** ––– 50 °C/W

R_θJA Junction-to-Ambient ––– 110

Thermal Resistance

V

= 55V

R

= 0.075Ω

I

= 17A 

Description

D -P ak T O -2 52 A A

I-P ak T O -25 1 A A l

Ultra Low On-Resistance

l

Surface Mount (IRFR024N)

l

Straight Lead (IRFU024N)

l

Advanced Process Technology

l

Fast Switching

l

Fully Avalanche Rated

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

** When mounted on 1" square PCB (FR-4 or G-10 Material ) .

For recommended footprint and soldering techniques refer to application note #AN-994

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 17

ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 12 A

IDM Pulsed Drain Current _† 68

P_D @T_C = 25°C Power Dissipation 45 W

Linear Derating Factor 0.30 W/°C

V_GS Gate-to-Source Voltage ± 20 V

E_AS Single Pulse Avalanche Energy_‚† 71 mJ

I_AR Avalanche Current_ 10 A

E_AR Repetitive Avalanche Energy_ 4.5 mJ

dv/dt Peak Diode Recovery dv/dt _Ġ 5.0 V/ns

T_J Operating Junction and -55 to + 175

T_STG Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )

°C

Absolute Maximum Ratings

S D

G

Parameter Min. Typ. Max. Units Conditions

IS Continuous Source Current MOSFET symbol

(Body Diode) ^{––– –––} showing the

ISM Pulsed Source Current integral reverse

(Body Diode) _ ^{––– –––} p-n junction diode.

VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 10A, VGS = 0V _„

trr Reverse Recovery Time ––– 56 83 ns TJ = 25°C, IF = 10A

Qrr Reverse RecoveryCharge ––– 120 180 nC di/dt = 100A/µs _„†

ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)

Source-Drain Ratings and Characteristics

17  68

A

‚ ^VDD = 25V, starting TJ = 25°C, L = 1.0mH RG = 25Ω, IAS = 10A. (See Figure 12)

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 ) ^„

Pulse width ≤ 300µs; duty cycle ≤ 2%.

†Uses IRFZ24N data and test conditions.

ƒ^ISD ≤ 10A, di/dt _≤ 280A/µs, V_{DD ≤} V_(BR)DSS, T_{J ≤} 175°C

Notes:

… This is applied for I-PAK, L_S of D-PAK is measured between lead and center of die contact.

Parameter Min. Typ. Max. Units Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.052 ––– V/°C Reference to 25°C, ID = 1mA

RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.075 _Ω VGS = 10V, ID = 10A _„

VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA

gfs Forward Transconductance 4.5 ––– ––– S VDS = 25V, ID = 10A_† ––– ––– 25

µA ^{VDS = 55V, VGS = 0V}

––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V

Gate-to-Source Reverse Leakage ––– ––– -100 ^nA VGS = -20V

Qg Total Gate Charge ––– ––– 20 ID = 10A

Qgs Gate-to-Source Charge ––– ––– 5.3 nC VDS = 44V

Qgd Gate-to-Drain ("Miller") Charge ––– ––– 7.6 VGS = 10V, See Fig. 6 and 13 _„†

td(on) Turn-On Delay Time ––– 4.9 ––– VDD = 28V

tr Rise Time ––– 34 ––– ID = 10A

td(off) Turn-Off Delay Time ––– 19 ––– RG = 24_Ω

tf Fall Time ––– 27 ––– RD = 2.6Ω, See Fig. 10 „

Between lead,

––– –––

6mm (0.25in.) from package

and center of die contact

Ciss Input Capacitance ––– 370 ––– VGS = 0V

Coss Output Capacitance ––– 140 ––– pF VDS = 25V

Crss Reverse Transfer Capacitance ––– 65 ––– ƒ = 1.0MHz, See Fig. 5 nH

Electrical Characteristics @ T

= 25°C (unless otherwise specified)

L_D Internal Drain Inductance

L_S Internal Source Inductance ––– –––

S D

G

IGSS

ns

4.5 7.5 I_DSS Drain-to-Source Leakage Current

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

1 10 100

0.1 1 10 10 0

I , Drain-to-Source Current (A) D

V , D ra in-to-S o urc e V o lta ge (V )_{D S}

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V

2 0 µ s P U L S E W ID TH T = 2 5 °C_C

A 4 .5 V

1 1 0 1 00

0.1 1 10 100

4 .5 V

I , Drain-to-Source Current (A) D

V , D ra in-to-S o urc e V o lta ge (V )_{D S}

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V

2 0 µ s P U L S E W ID TH T = 1 7 5 °C_C

A

1 1 0 1 0 0

4 5 6 7 8 9 1 0

T = 2 5 °CJ

V , G a te -to -S o u rc e V o lta g e (V )G S

DI , Drain-to-Source Current (A)

T = 1 7 5 °CJ

A V = 2 5 V

2 0 µ s P U L S E W ID T H D S

0.0 0.5 1.0 1.5 2.0 2.5 3.0

-60 -40 -20 0 2 0 4 0 6 0 8 0 1 0 0 1 2 0 1 4 0 1 6 0 1 8 0

T , J unc tion T em perature (°C )J R , Drain-to-Source On ResistanceDS(on) (Normalized)

V = 1 0 V _{G S} A I = 1 7 AD

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

Fig 8. Maximum Safe Operating Area

0 1 00 2 00 3 00 4 00 5 00 6 00 7 00

1 1 0 100

C, Capacitance (pF)

V , D rain-to -S ourc e V oltage (V )D S A V = 0 V , f = 1 M H z

C = C + C , C S H O R TE D C = C

C = C + C G S

is s g s g d d s rs s g d

o ss d s gd

C is s C o s s

C rs s

0 4 8 12 16 20

0 4 8 1 2 16 2 0

Q , Tota l G ate C h arg e (n C )_G V , Gate-to-Source Voltage (V) GS

A F O R TE S T C IR C U IT S E E F IG U R E 1 3 V = 4 4 V

V = 2 8 V I = 1 0 A

D S D S D

1 1 0 1 0 0

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

T = 2 5 °C_J

V = 0 V G S

V , S o urc e-to -D rain V o lta ge (V )

I , Reverse Drain Current (A)

S D

SD

A T = 1 7 5 °C_J

1 1 0 10 0 1 00 0

1 1 0 100

V , D ra in-to-S o urc e V o lta ge (V )_{D S}

I , Drain Current (A)

O P E R A T IO N IN T H IS A R E A L IM ITE D B Y R

D

D S (on)

1 0 µ s

1 0 0µ s

1 m s

1 0m s A T = 2 5 °C

T = 1 7 5 °C S in g le P u ls e

C J

Fig 10a. Switching Time Test Circuit

V_DS 90%

10% V_GS

t_d(on) t_r t_d(off) t_f

Fig 10b. Switching Time Waveforms

V_DS

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %

R_D

VGS

R_G

D.U.T.

4.5V

+

-^VDD

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current Vs.

Case Temperature

0.01 0.1 1 10

0.00001 0.0001 0.001 0.01 0.1 1

t , R e c ta n g u la r P u ls e D u ra tio n (se c )₁

thJC

D = 0.5 0

0 .01 0 .02 0 .0 5 0 .1 0 0 .2 0

S IN G L E P U L S E (T H E R M A L R E S P O N S E )

A

Thermal Response (Z )

P

t₂ t1 D M

N otes : 1 . D uty f ac t or D = t / t

2 . P ea k T = P x Z + T

1 2

J D M th J C C 0

4 8 1 2 1 6 2 0

2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 1 7 5

C I , Drain Current (Amps) D

T , C as e T em pe rature (°C )

A

Q_G

Q_GS Q_GD

V_G

Charge

D.U.T. ^VDS

I_D I_G

3mA V_GS

.3µF 50KΩ 12V .2µF

Current Regulator Same Type as D.U.T.

Current Sampling Resistors

+ -

10 V

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test

Circuit

tp

V(B R )D S S

I_{A S}

R G

IA S 0 .0 1Ω tp

D .U .T V D S L

+ - VD D D R IV E R

A 1 5 V

2 0V

0 20 40 60 80 1 0 0 1 2 0 1 4 0

25 5 0 7 5 1 00 1 25 1 50 17 5

J E , Single Pulse Avalanche Energy (mJ) AS

A S tartin g T , J u nc tio n T em pe ra ture (°C )

I TO P 4 .2 A 7 .2 A B O T TO M 1 0 A

V = 2 5 V

D

D D

P.W. ^Period

di/dt Diode Recovery

dv/dt

Ripple ≤5%

Body Diode Forward Drop Re-Applied

Voltage Reverse Recovery Current

Body Diode Forward Current

V_GS=10V

V_DD

I_SD Driver Gate Drive

D.U.T. I_SDWaveform

D.U.T. V_DSWaveform

Inductor Curent

D = ^P.W. Period

+ - +

+

- + -

-

Fig 14. For N-Channel HEXFETS

*

Peak Diode Recovery dv/dt Test Circuit

ƒ

‚ „

RG

V_DD

• dv/dt controlled by R_G

• Driver same type as D.U.T.

• ^ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test D.U.T Circuit Layout Considerations

• Low Stray Inductance • Ground Plane

_• Low Leakage Inductance Current Transformer



*

Package Outline

TO-252AA Outline

Dimensions are shown in millimeters (inches)

TO-252AA (D-PARK)

Part Marking Information

6.73 (.265) 6.35 (.250)

- A -

4

1 2 3

6.22 (.245) 5.97 (.235)

- B -

3X0.89 (.035) 0.64 (.025)

0.25 (.010) M A M B

4.57 (.180) 2.28 (.090)

2X 1.14 (.045) 0.76 (.030) 1.52 (.060) 1.15 (.045) 1.02 (.040) 1.64 (.025)

5.46 (.215) 5.21 (.205)

1.27 (.050) 0.88 (.035)

2.38 (.094) 2.19 (.086)

1.14 (.045) 0.89 (.035)

0.58 (.023) 0.46 (.018)

6.45 (.245) 5.68 (.224)

0.51 (.020) M IN .

0.58 (.023) 0.46 (.018)

LE A D A S S IG N M E N T S 1 - G A T E 2 - D R A IN 3 - S O U R C E 4 - D R A IN 10.42 (.410)

9.40 (.370)

N O TE S :

1 D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982. 2 C O N T R O LLIN G D IM E N S IO N : IN C H .

3 C O N F O R M S T O JE D E C O U TLIN E TO -252A A . 4 D IM E N S IO N S S H O W N A R E B E F O R E S O LD E R D IP , S O LD E R D IP M A X. +0.16 (.006).

IN T E R N A T IO N A L R E C T IF IE R L O G O

A S S E M B L Y L O T C O D E E X A M P L E : T H IS IS A N IR F R 1 2 0

W IT H A S S E M B L Y L O T C O D E 9 U 1 P

F IR S T P O R T IO N O F P A R T N U M B E R

S E C O N D P O R T IO N O F P A R T N U M B E R 1 2 0

IR F R 9 U 1 P

A

Package Outline

TO-251AA Outline

Dimensions are shown in millimeters (inches)

TO-251AA (I-PARK)

Part Marking Information

6 .7 3 (.26 5 ) 6 .3 5 (.25 0 )

- A -

6 .2 2 (.2 4 5 ) 5 .9 7 (.2 3 5 )

- B -

3 X 0 .8 9 (.0 3 5 ) 0 .6 4 (.0 2 5 )

0 .25 (.0 1 0 ) M A M B 2 .28 (.0 9 0 )

1 .1 4 (.0 4 5 ) 0 .7 6 (.0 3 0 ) 5 .4 6 (.2 1 5 ) 5 .2 1 (.2 0 5 )

1 .2 7 (.0 50 ) 0 .8 8 (.0 35 )

2 .3 8 (.0 9 4 ) 2 .1 9 (.0 8 6 )

1 .14 (.0 4 5 ) 0 .89 (.0 3 5 ) 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 )

L E A D A S S IG N M E N T S 1 - G A T E 2 - D R A IN 3 - S O U R C E 4 - D R A IN

N O T E S :

1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H .

3 C O N F O R M S T O J E D E C O U T L IN E T O -2 5 2 A A . 4 D IM E N S IO N S S H O W N A R E B E F O R E S O L D E R D IP , S O L D E R D IP M A X . + 0.1 6 (.0 0 6 ).

9 .6 5 (.3 8 0 ) 8 .8 9 (.3 5 0 )

2 X 3 X 2.2 8 (.0 9 0) 1.9 1 (.0 7 5) 1 .5 2 (.06 0 ) 1 .1 5 (.04 5 )

4

1 2 3

6 .4 5 (.2 45 ) 5 .6 8 (.2 24 )

0 .58 (.0 2 3 ) 0 .46 (.0 1 8 )

IN T E R N A T IO N A L R E C T IF IE R L O G O

A S S E M B L Y L O T C O D E

F IR S T P O R T IO N O F P A R T N U M B E R

S E C O N D P O R T IO N O F P A R T N U M B E R 1 2 0

9 U 1 P E X A M P L E : T H IS IS A N IR F U 1 2 0

W IT H A S S E M B L Y L O T C O D E 9 U 1 P

IR F U

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 4/98

Tape & Reel Information

TO-252AA

Dimensions are shown in millimeters (inches)

T R

1 6.3 ( .6 41 ) 1 5.7 ( .6 19 )

8 .1 ( .3 18 ) 7 .9 ( .3 12 ) 12 .1 ( .4 7 6 )

11 .9 ( .4 6 9 ) F E E D D IR E C T IO N F E E D D IR E C T IO N

16 .3 ( .64 1 ) 15 .7 ( .61 9 )

T R R T R L

N O T E S :

1 . C O N T R O LL IN G D IM E N S IO N : M ILL IM E T E R .

2 . A LL D IM E N S IO N S A R E S H O W N IN M ILL IM E T E R S ( IN C H E S ). 3 . O U T L IN E C O N F O R M S T O E IA -4 81 & E IA -54 1.

N O T E S :

1. O U T L IN E C O N F O R M S T O E IA -4 81 .

16 m m 1 3 IN C H