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Characterization of Electrical Behavior of Ba5HoTi3V7O30 Ceramic Using Impedance Analysis

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Figure

Figure 1. Room temperature XRD pattern and SEM micrograph (inset) of BHTV.
Figure 2. Nyquist plots (symbol ■) through experiment and fitted data (symbol □) for (a) 573 K; (b) 623 K; (c) 673 K and (d) 723 K temperature; (e) model to an equivalent circuit used in fitting
Figure 4 shows the variation of relaxation times as a function of inverse of absolute temperature of BHTV compound
Figure 4. (Mverse of absolute temperature calculated from the imped-ance spectrum (ZVariation of relaxation times as a function of in-″ vs
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