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Atomic and Electronic Structure of Interfaces in Materials Systems for Future Semiconductor Devices

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Figure

Figure 1. Examples of Si-SiO2-Si superstructures with one (a) and two (b) oxide layers
Figure 2. Band offsets for high-κ dielectrics on Si (from [46]).
Figure 3.  Dielectric constant κ versus band gap for candidate gate oxides (from [46]).
Figure 4. Dielectric constant κ versus optical bandgap EG of alternative gate dielectrics that are likely to be stable in contact with silicon (from [54])
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