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Tunneling in Systems of Coupled Dopant Atoms in Silicon Nano devices

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Figure

Fig. 1 Kelvin probe force microscopy of donor atoms. a KPFM measurement setup, showing a cantilever approached near the surface of a SOI-FETchannel with the device under regular operation conditions
Fig. 2 Electron injection in individual donor atoms observed by KPFM. a Sequence of electronic potential landscapes measured at lowtemperature (T = 13 K) on the channel of an SOI-FET doped with P-donors (ND ≈ 1 × 1018 cm−3) as a function of applied VBG (−3
Fig. 4 Nanoscale-channel transistors with various channel designs.P-donors (nanowire and stub-shaped channels are illustrated);concentration (occurs viaa SOI-FETs with a top gate and bias circuit for ID-VG measurements.Different devices have been fabricated, with different dopingconcentrations and profiles across the channel: b low concentration(ND ≈ 1 × 1018 cm−3)—single-electron tunneling occurs via individual c highND ≈ 1 × 1019 cm−3)—single-electron tunneling “clusters” of P-donors
Fig. 5 Single-electron tunneling operation of single-dopant transistors at elevated temperatures.tion of channel potential with some P-donors having deeper ground state energy level
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